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| 2. |
- Okada, S, et al.
(author)
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Crystal growth of vanadium silicides from high-temperature metal solutions and some properties of the crystals
- 1996
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In: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING. - : ELSEVIER SCIENCE SA LAUSANNE. ; 209:1-2
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Other publication (other academic/artistic)abstract
- Crystals of vanadium silicides were grown from high-temperature tin and copper solutions in an argon atmosphere using vanadium metal chips and silicon powder as starting materials. The crystals grown were V3Si, V5Si3 and VSi2. The growth conditions for o
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| 3. |
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| 4. |
- Okada, S, et al.
(author)
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Crystal growth and some properties of LuB4, LuAlB4, and Lu2AlB6
- 1996
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In: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. - : JAPAN J APPLIED PHYSICS. ; 35:9A
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Other publication (other academic/artistic)abstract
- Crystals of LuB4, LuAlB4, and Lu2AlB6 were grown by the high-temperature aluminium solution method using lutetium oxide and crystalline boron powders as starting materials. The growth conditions for obtaining single crystals of relatively large size were
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| 5. |
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| 6. |
- OKADA, S, et al.
(author)
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PREPARATIONS AND SOME PROPERTIES OF W2B, DELTA-WB AND WB2 CRYSTALS FROM HIGH-TEMPERATURE METAL SOLUTIONS
- 1995
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In: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. - : JAPAN J APPLIED PHYSICS. ; 34:1
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Other publication (other academic/artistic)abstract
- W2B, delta-WB and WB2 crystals were preparad from high temperature aluminium and copper solutions using tungsten metal and crystalline boron powders as starting material under an argon atmosphere. Growth conditions for obtaining crystals of relatively la
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| 7. |
- Okada, S, et al.
(author)
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Synthesis and investigation of large crystals of (Cr1-xTMx)(3)B-4 with TM = Ti, V, Nb, Ta, Mo, and W
- 2000
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In: JOURNAL OF SOLID STATE CHEMISTRY. - : ACADEMIC PRESS INC. - 0022-4596. ; 154:1, s. 45-48
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Journal article (peer-reviewed)abstract
- Single crystals of the ternary borides (Cr1-xTMx)(3)B-4 (TM = Ti, V, Nh, Ta, Mo, W) were grown by the flux method using molten aluminum as a solvent, The substances were subjected to chemical analyses and measurements of the unit cell parameters. Crystals
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