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  • Tuomisto, F, et al. (author)
  • Dissociation of V-Ga-O-N complexes in HVPE GaN by high pressure and high temperature annealing
  • 2006
  • In: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 243:7, s. 1436-1440
  • Journal article (peer-reviewed)abstract
    • We have used positron annihilation spectroscopy to study the high-pressure annealing induced thermal recovery of vacancy defects in free-standing GaN grown by hydride vapor phase epitaxy (HYPE). The results show that the in-grown Ga vacancy complexes recover after annealing at 1500-1700 K. Comparison of the experimental positron data with ab-initio calculations indicates that the Doppler broadening measurement of the electron momentum distribution is sensitive enough to distinguish between the N and O atoms surrounding the Ga vacancy. We show that the difference between the isolated V-Ga in electron irradiated GaN and the V-Ga-O-N complexes in highly O-doped GaN is clear, and the Ga vacancy related defect complexes that start dissociating at 1500 K can be identified as V-Ga-O-N pairs.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Saarinen, K. (1)
Tuomisto, F. (1)
Xu, X. (1)
Paskova, Tanja (1)
Monemar, Bo (1)
Suski, T. (1)
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Bockowski, M. (1)
Hautakangas, S. (1)
Makkonen, I. (1)
Puska, MJ (1)
Ranki, V (1)
Look, DC (1)
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University
Linköping University (1)
Language
English (1)
Year
2006 (1)

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