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- Riedel, Gernot J, et al.
(author)
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Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
- 2009
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In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 30:2, s. 103-106
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Journal article (peer-reviewed)abstract
- Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AIN-NL to a hot-wall MOCVD-grown AIN-NL reduces NL TBR by 25%, resulting in similar to 10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/GaN devices.
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