| 1. |
- Aljarosha, Alhassan, 1982, et al.
(författare)
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Performance Analysis of an Integrated Multi-Channel Power Amplifier Incorporating an IC-to-Waveguide Transition
- 2021
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Ingår i: 2021 15TH EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION (EUCAP). - 2164-3342.
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Konferensbidrag (refereegranskat)abstract
- This paper studies the power combiner efficiency of multiple Power Amplifier (PA) output signals that are combined within a low-loss contactless transition, intrinsically having low isolation characteristics. Since the PA performance is sensitive to load impedance variations, poor isolation may affect each PA performance, thereby reducing the overall power combiner efficiency. Load impedance variations can e.g. be due to process, supply-voltage and temperature variations. A four-way spatial power combiner (SPC) design is compared to an on-chip Wilkinson Power Combiner (WPC) implemented in 0.13 mu m SiGe BiCMOS technology incorporating a 50 Omega impedance matching network. The WPC occupies 84% more area than the non-isolating SPC. Moreover, the non-isolating SPC has an average efficiency 14% larger than the WPC. For physically realistic variations, simulated results show a sigma-variation of 2.81 mW in P-out and 0.87 % in PAE for the non-isolating SPC, and 2.34 mW in P-out and 0.45 % in PAE for the WPC (@1 dB compression).
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| 2. |
- Aljarosha, Alhassan, 1982, et al.
(författare)
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Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies
- 2019
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Ingår i: 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings. ; July 2019, s. 1081-1082
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Konferensbidrag (refereegranskat)abstract
- This paper presents a comparison between different silicon (Si) substrates used in Si-based IC technologies at E-Band (71-86 GHz). A unique low-loss and compact contactless transition from a silicon IC (p-doped substrate) to a metal waveguide is used. The proposed transition incorporates a spatial power combiner to enable direct electromagnetic coupling from an array of patches on the IC to a metal waveguide. This design enables a high-power transition from an IC to a waveguide and/or antenna at millimeter-wave (mm-wave) frequencies, where a galvanic contact between the two parts is avoided.
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| 3. |
- Aljarosha, Alhassan, 1982, et al.
(författare)
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Silicon-Based IC-Waveguide Integration for Compact and High-Efficiency mm-Wave Spatial Power Combiners
- 2021
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Ingår i: IEEE Transactions on Components, Packaging and Manufacturing Technology. - 2156-3985 .- 2156-3950. ; 11:7, s. 1115-1121
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Tidskriftsartikel (refereegranskat)abstract
- A novel and compact millimeter-wave spatial power combiner is developed integrating a Silicon-based integrated circuit (IC) in a metal waveguide. As an initial step towards integrating a silicon-based active IC in a waveguide, a passive back-to-back transition incorporating a 4-way spatial power splitter and combiner is realized at E-band (71–86 GHz). In contrast to existing solutions, the proposed design considers power splitting and combining using a low-loss wireless transition between the IC and the waveguide. The proposed back-to-back structure comprises an IC implemented using Institute for High Performance Microelectronics (IHP’s) 0.13μm SiGe BiCMOS technology integrated into the H-plane of a waveguide. The IC is post-processed and assembled in the waveguide prototype. The measured prototype shows a return loss better than 13 dB, an average insertion loss of 1.7 dB for a single transition, and a fractional bandwidth of 26.4 % (69–90 GHz).
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| 4. |
- Hu, Xin, et al.
(författare)
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65-nm CMOS Monolithically Integrated Subterahertz Transmitter
- 2011
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 32:9, s. 1182-1184
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Tidskriftsartikel (refereegranskat)abstract
- This letter presents a transmitter for subterahertz radiation (up to 160 GHz), which consists of a nonlinear transmission line (NLTL) and an extremely wideband (EWB) slot antenna on a silicon substrate of low resistivity (10 Omega . cm). The fabrication was realized using a commercially available 65-nm CMOS process. On-wafer characterization of the whole transmitter, of the stand-alone EWB antenna, and of the stand-alone NLTL is presented. Reflection measurements show that the stand-alone EWB antenna has a -10-dB impedance bandwidth in the frequency bands of 75-100 GHz and 220-325 GHz, which agrees very well with the simulation results. The simulated radiation patterns of the antenna are also presented, indicating that the transmitter has an ominidirectional performance. The output power of the NLTL alone and of the transmitter is measured up to 160 GHz, from which the power gain of the on-chip antenna is derived and has a maximum value of -9.5 dBi between 90 and 120 GHz.
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| 5. |
- Kaul, Piyush, et al.
(författare)
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An E-band silicon-ic-to-waveguide contactless transition incorporating a low-loss spatial power combiner
- 2018
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Ingår i: Asia-Pacific Microwave Conference Proceedings, APMC. - 9784902339451 ; 2018-November, s. 1528-1530
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Konferensbidrag (refereegranskat)abstract
- A novel contactless transition from a (Bi)CMOS Silicon IC (p-doped substrate) to a metal waveguide in E-Band is presented. This transition also incorporates a spatial power combiner in air to enable direct electromagnetic coupling from an array of on-chip microstrip transmission lines to a single waveguide mode, and vice versa. The transition is relatively low loss and is particularly suitable for high-power mm-wave applications. The simulated return loss of a four-channel passive back-to-back transition is better than 10 dB over the frequency band ranging from 60-90 GHz (E-Band). The average insertion loss of a single transition is 1.31 dB over the entire E-Band.
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| 6. |
- Kaul, Piyush, et al.
(författare)
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Spatial Power Combining and Impedance Matching Silicon IC-to-Waveguide Contactless Transition
- 2021
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Ingår i: EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference. ; , s. 217-220
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Konferensbidrag (refereegranskat)abstract
- In this paper a new multi-step joint-design approach is described for a multi-channel power amplifier integrated with an IC-to-Waveguide transition. The approach enables an optimal impedance match of a waveguide to an integrated-circuit via a contactless transition. Spatial power combining with a non-isolated contactless transition is achieved in the input and output networks of the power amplifier. Simulation results are presented which are in agreement with the joint-design requirements. This methodology enables IC-to-Waveguide integration and provides a suitable approach for mm-wave system integration.
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| 7. |
- Maaskant, Rob, 1978, et al.
(författare)
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Deep Integration Antenna Array: Design Philosophy and Principles
- 2019
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Ingår i: 13th European Conference on Antennas and Propagation, EuCAP 2019.
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Konferensbidrag (refereegranskat)abstract
- An active integrated antenna array is designed through a new design low called Deep Integration. Amplifier output currents are combined to synthesize the optimal antenna current distribution to produce the desired radiation characteristics. The electromagnetic field from a cluster of amplifiers is power-combined in low-loss (air) dielectrics inside a single antenna element to increase the total radiated output power. These elements can be combined in an array to further increase radiated power. Such solutions are highly compact in size and capable of delivering high Effective Radiated Power (ERP), which is particularly important in the area of mm-wave integrated circuit design for wireless applications. A simulation example is provided of a Deep Integration antenna array, demonstrating the design philosophy and principles.
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| 8. |
- Meyer, E., et al.
(författare)
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The state of the art in beyond 5G distributed massive multiple-input multiple-output communication system solutions
- 2022
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Ingår i: Open Research Europe. - : F1000 Research Ltd. - 2732-5121. ; 2
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Forskningsöversikt (refereegranskat)abstract
- Beyond fifth generation (5G) communication systems aim towards data rates in the tera bits per second range, with improved and flexible coverage options, introducing many new technological challenges in the fields of network architecture, signal pro- cessing, and radio frequency front-ends. One option is to move towards cell-free, or distributed massive Multiple-Input Multiple-Output (MIMO) network architectures and highly integrated front-end solutions. This paper presents an outlook on be- yond 5G distributed massive MIMO communication systems, the signal processing, characterisation and simulation challenges, and an overview of the state of the art in millimetre wave antennas and electronics.
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| 9. |
- Roev, Artem, 1992, et al.
(författare)
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A Wideband mm-Wave Watt-Level Spatial Power-Combined Power Amplifier With 26% PAE in SiGe BiCMOS Technology
- 2022
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 70:10, s. 4436-4448
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Tidskriftsartikel (refereegranskat)abstract
- We present a widehand watt-level power amplifier (PA) for the K a-band designed and implemented in the 0.25-mu m SiGe:C BiCMOS technology. The core of the design is a chip with multiple custom PA unit cells (PA-cells), which are interfaced with a power combiner placed on a laminate. The power combiner is based on a principle of the recently proposed multichannel transition with spatial power combining functionality, where an array of strongly coupled microstrip lines (MLs) interface a single substrate integrated waveguide (SIW). The realized watt-level PA combining four differential cascode PA-cells achieves a saturated output power (P-sat) of 30.8 dBm with 26.7% power-added efficiency (PAE). The 64-QAM modulation tests confirm the competitive PA performance on multi-Gb/s communication signals. The obtained combination of the high PAE and high P(sat )over a wide frequency band (30%) is an advantageous property of the proposed solution with respect to the previously published designs. This high performance is the result of using the proposed architecture with low-loss (0.6 dB) and wideband (54%) parallel spatial power combiner. Moreover, the presented joint EM-circuit-thermal optimization allows achieving optimal system-level performance by taking into account various critical multiphysics effects occurring in the combined PA. This article describes the design and performance of the whole integrated structure and its individual components.
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| 10. |
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