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Search: WFRF:(Motapothula M.)

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1.
  • Huang, Ke, et al. (author)
  • Tailoring magnetic order via atomically stacking 3d/5d electrons to achieve high-performance spintronic devices
  • 2020
  • In: Applied Physics Reviews. - : AMER INST PHYSICS. - 1931-9401. ; 7:1
  • Research review (peer-reviewed)abstract
    • The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir (5d) oxides exhibit rich magnetic behaviors and strong spin-orbit coupling through the entanglement of their 3d and 5d electrons. Through magnetization and magnetotransport measurements, we found that the magnetic order is interface-dominated as the superlattice period is decreased. We were able to then effectively modify the magnetization, tilt of the ferromagnetic easy axis, and symmetry transition of the anisotropic magnetoresistance of the LaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d) interfaces. Further investigations using in-depth first-principles calculations and numerical simulations revealed that these magnetic behaviors could be understood by the 3d/5d electron correlation and Rashba spin-orbit coupling. The results reported here demonstrate a new route to synchronously engineer magnetic properties through the atomic stacking of different electrons, which would contribute to future applications in high-capacity storage devices and advanced computing.
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2.
  • Palei, Milan, et al. (author)
  • Photoluminescence enhancement and high accuracy patterning of lead halide perovskite single crystals by MeV ion beam irradiation
  • 2020
  • In: Journal of Materials Chemistry C. - : Royal Society of Chemistry (RSC). - 2050-7526 .- 2050-7534. ; 8:29, s. 9923-9930
  • Journal article (peer-reviewed)abstract
    • Focused ion beam (FIB) has recently been used to tune the optical properties of lead halide perovskites (LHPs), opening an interesting avenue for applications in optoelectronic devices. However, it has remained an open question to date whether FIB can be used to locally enhance the photoluminescence (PL) of LHPs. In this work we irradiate MAPbBr(3)(MA = methylammonium) single crystals with a high energy micron-sized ion probe of different ionic masses (3 MeV He+, 12.5 MeV Br5+, and 20 MeV I7+) and study the PL as a function of the damage induced by the ion beam. We find that at low damage levels the PL is enhanced about six times with respect to the pristine material, while increasing the damage level produces a progressive PL decrease, and, above a threshold, the PL is finally quenched below the value of the pristine crystal. We attribute this behavior to the interaction of free carriers with irradiation induced surface defects: at low damage levels the migration of carriers toward the bulk is inhibitedviatrapping-detrapping events at surface defects, allowing their radiative recombination near the surface; at higher damage, though, the probability for non-radiative recombination increases and gradually becomes dominant. We thus present a method to locally increase the PL of bulk LHP, which could be applied in a wide range of fields, such as highly sensitive ion beam detection or future optoelectronic device design.
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