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Träfflista för sökning "WFRF:(Mtchedlidze T.) "

Search: WFRF:(Mtchedlidze T.)

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1.
  • Izadifard, Morteza, et al. (author)
  • Band alignment in GaInNP/GaAs heterostructures grown by gas-source molecular-beam epitaxy
  • 2005
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 86:26, s. 261904-
  • Journal article (peer-reviewed)abstract
    • Low-temperature photoluminescence (PL), PL excitation, and optically detected cyclotron resonance measurements are employed to determine band alignment in GaInNP/GaAs heterostructures grown by gas-source molecular-beam epitaxy. The type II band alignment at the Ga0.46In0.54NxP1−x/GaAs interface is concluded for the alloys with x ≥ 0.5% based on (i) highly efficient PL upconversion observed in the N containing samples and (ii) appearance of a near-infrared PL emission attributed to the spatially indirect type II transitions. Compositional dependence of the conduction band offset at the Ga1−yInyNxP1−x/GaAs interface is also estimated.
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2.
  • Vorona, Igor, et al. (author)
  • Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate
  • 2005
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 86:22, s. 222110-
  • Journal article (peer-reviewed)abstract
    • Dilute-nitride Ga0.44In0.56NyP1-y alloys with y=0-0.02, grown on a GaAs substrate using gas-source molecular beam epitaxy, are studied by the optically detected magnetic resonance (ODMR) technique. Grown-in paramagnetic defects were found to act as centers of nonradiative recombination. Resolved hyperfine structure for one of the detected ODMR signals suggests involvement of a Ga-interstitial or an As-antisite in the structure of the related defect. © 2005 American Institute of Physics.
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