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Träfflista för sökning "WFRF:(Olsson Gustaf) "

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1.	Andersson, Pernille, et al. (author) The Pedagogical Academy - a Way to Encourage and Reward Scholarly Teaching 2003 In: Improving Student Learning: Theory and Practice-10 years on. - 1 873576 69 2 ; , s. 307-314 Conference paper (peer-reviewed)
2.	Bark, Glenn, et al. (author) Politikerna struntar i klimatforskningen : 420 forskare: Regeringens politik är katastrofal – nu måste fler svenskar kräva en omställning 2023 In: Aftonbladet Debatt. - 1103-9000. Journal article (pop. science, debate, etc.)abstract DEBATE. We researchers have long demanded that the government take climate research seriously and speed up the transition to a sustainable society.Instead, the government is pursuing a policy that deliberately increases emissions. Now more citizens need to raise their voices and show that we demand a knowledge-based climate transition, and it is urgent.
3.	Kehoe, Laura, et al. (author) Make EU trade with Brazil sustainable 2019 In: Science. - : American Association for the Advancement of Science (AAAS). - 0036-8075 .- 1095-9203. ; 364:6438, s. 341- Journal article (other academic/artistic)
4.	Abermann, Stephan, et al. (author) Comparative Study On The Impact Of TiN and Mo Metal Gates ON MOCVD-Grown HfO2 and ZrO2 High-k Dielectrics For CMOS Technology 2006 In: Proceedings of 28th International Conference on the Physics of Semiconductors (ICPS). Conference paper (peer-reviewed)
5.	Abermann, S., et al. (author) Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-k dielectrics 2007 In: Microelectronics and reliability. - : Elsevier BV. - 0026-2714 .- 1872-941X. ; 47:4-5, s. 536-539 Journal article (peer-reviewed)abstract In this work we compare the impacts of nickel (Ni), titanium-nitride (TiN), molybdenum (Mo), and aluminium (Al), gates on MOS capacitors incorporating HfO2- or ZrO2-dielectrics. The primary focus lies on interface trapping, oxide charging, and thermodynamical stability during different annealing steps of these gate stacks. Whereas Ni, Mo, and especially TIN are investigated as most promising candidates for future CMOS devices, Al acted as reference gate material to benchmark the parameters. Post-metallization annealing of both, TiN- and Mo-stacks, resulted in very promising electrical characteristics. However, gate stacks annealed at temperatures of 800 degrees C or 950 degrees C show thermodynamic instability and related undesirable high leakage currents.
6.	Abermann, S, et al. (author) Impact of Al-, Ni-, TiN-, and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-K dielectrics 2006 Conference paper (peer-reviewed)
7.	Abermann, S., et al. (author) Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric 2007 In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 84:5-8, s. 1635-1638 Journal article (peer-reviewed)abstract We evaluate various metal gate/high-k/Si capacitors by their resulting electrical characteristics. Therefore, we process MOS gate stacks incorporating aluminium (Al), nickel (Ni), titanium-nitride (TiN), and molybdenum (Mo) as the gate material, and metal organic chemical vapour deposited (MOCVD) ZrO2 and HfO2 as the gate dielectric, respectively. The influence of the processing sequence - especially of the thermal annealing treatment - on the electrical characteristics of the various gate stacks is being investigated. Whereas post metallization annealing in forming gas atmosphere improves capacitance-voltage behaviour (due to reduced interface-, and oxide charge density), current-voltage characteristics degrade due to a higher leakage current after thermal treatment at higher temperatures. The Flatband-voltage values for the TiN-, Mo-, and Ni-capacitors indicate mid-gap pinning of the metal gates, however, Ni seems to be thermally unstable on ZrO2, at least within the process scheme we applied.
8.	Abermann, S., et al. (author) Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric 2006 In: Presented at Int. Conf. on Micro- and Nano-Engineering. Conference paper (other academic/artistic)
9.	Activity Report: Automatic Control 1973-1974 1974 Reports (other academic/artistic)
10.	Activity Report: Automatic Control 1974-1975 1975 Reports (other academic/artistic)

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Type of publication: journal article (133); conference paper (91); reports (75); book chapter (26); book (15); research review (7); show more...; doctoral thesis (6); other publication (3); licentiate thesis (2); show less...

Type of content: peer-reviewed (241); other academic/artistic (109); pop. science, debate, etc. (8)

Author/Editor: Olsson, Gustaf (255); Nicholls, Ian A. (32); Sjöblom, Gustaf (19); Olsson, Jörgen (17); Olsson, Bengt (13); Jeppsson, Ulf (13); show more...; Egnell, Gustaf (13); Mattiasson, Bo (12); Rosén, Christian (11); Simpson, A (10); Liu, Jing (10); Åström, Karl Johan (8); Wiklander, Jesper G. ... (7); Suriyanarayanan, Sub ... (7); Liu, Yi (7); Ujang, Z. (6); de Jong, Johnny (6); Carlsson, Bengt (5); Edgren, Gustaf (5); Abermann, S. (4); Bertagnolli, E. (4); Damayanti, A. (4); Ericson, Lars (4); Henschel, Henning (4); Sellergren, Börje (4); Andrews, John F. (4); Gerhardt, Karin (4); Vanrolleghem, P. (4); Boström, Gustaf (4); Olsson, Jörgen, 1966 ... (3); Efavi, J. (3); Lövheim, Hugo, 1981- (3); Andersson, Håkan S. (3); Wikman, Susanne (3); Rieger, L. (3); Akselsson, Cecilia (3); Olsson, Martin L (3); Löfgren, Stefan (3); Berglund, Håkan (3); Eriksson, Leif, 1970 (3); Spanjers, H. (3); Steyer, J.-P. (3); Rosendahl, Erik (3); Nielsen, M. (3); Ulander, Lars, 1962 (3); Aspegren, H (3); Lundin-Olsson, Lille ... (3); Fransson, J E S (3); Blom, Hans-Olof (3); Von Stedingk, Henrik (3); show less...

University: Lund University (262); Uppsala University (49); Linnaeus University (34); Swedish University of Agricultural Sciences (13); Chalmers University of Technology (9); Umeå University (8); show more...; Karolinska Institutet (6); Malmö University (5); University of Gothenburg (3); Royal Institute of Technology (3); Linköping University (3); Luleå University of Technology (2); Stockholm University (2); University West (2); RISE (2); Mid Sweden University (1); University of Skövde (1); Karlstad University (1); IVL Swedish Environmental Research Institute (1); show less...

Language: English (315); Swedish (34); Undefined language (3); Chinese (2); German (1); French (1); show more...; Russian (1); Korean (1); show less...

Research subject (UKÄ/SCB): Engineering and Technology (269); Natural sciences (49); Medical and Health Sciences (18); Agricultural Sciences (13); Social Sciences (8); Humanities (3)

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