| 1. |
- Violina, G. N., et al.
(author)
-
Photoelectric properties of p(+)-n junctions based on 4H-SiC ion-implanted with aluminum
- 2002
-
In: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 36:6, s. 706-709
-
Journal article (peer-reviewed)abstract
- The photoelectric properties of p(+)-n junctions that were based on 4H-SiC ion-implanted with aluminum and were formed in lightly doped n-type epitaxial layers grown by chemical vapor deposition were studied. It is shown that such photodetectors combine in full measure the advantages of photostructures formed on the basis of Schottky barriers and epitaxial p-n junctions. The results of the theoretical calculation of spectral characteristics of ion-implanted photodetectors are in good agreement with experimental data. The structures feature an efficiency of collection of nonequilibrium charge carriers close to 100% in the spectral range of the photon energies of 3.5-4.25 eV.
|
|
| 2. |
- Ivanov, A, et al.
(author)
-
High energy resolution detectors based on 4H-SiC
- 2005
-
In: SILICON CARBIDE AND RELATED MATERIALS 2004. - ZURICH-UETIKON : TRANS TECH PUBLICATIONS LT. - 0878499636 ; , s. 1029-1032
-
Conference paper (peer-reviewed)abstract
- The spectrometric characteristics of the detectors based on 4H-SiC using 4.8-7.7 MeV a-particles were determined. The Cr Schottky barriers with areas of 1x10(-2) cm(2) were performed by vacuum thermal evaporation on 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) with thickness 26 and 50 μ m. The concentrations of the uncompensated donors into CVD epitaxial layers were (6-10) x10(14) cm(-3), that allowed to develop a detector depletion region up to 30 μ m using reverse bias of 400 V. The energy resolution less than 20 keV (0.34%) for lines of 5.0-5.5 MeV was achieved that is twice as large of the resolution of high-precision Si-based detectors prepared on specialized technology. The maximum signal amplitude of 4H-SiC - detectors corresponding to the average electron-hole pair generation energy was found to be 7.70 eV.
|
|
| 3. |
- Ivanov, A M, et al.
(author)
-
High-resolution short range ion detectors based on 4H-SiC films
- 2004
-
In: Technical physics letters. - : Pleiades Publishing Ltd. - 1063-7850 .- 1090-6533. ; 30:7, s. 575-577
-
Journal article (peer-reviewed)abstract
- The energy resolution of SiC detectors has been studied in application to the spectrometry of alpha particles with 5.1-5.5 MeV energies. The Schottky barrier structure of the detector was based on a CVD-grown epitaxial n-4H-SiC film with a thickness of 26 mum and an uncompensated donor concentration of (1-2) x 10(15) cm(-3). An energy resolution of 0.5% achieved for the first time with SiC detectors allows fine structure of the alpha particle spectrum to be revealed. The average energy of the electron-hole pair formation in 4H-SiC is estimated at 7.71 eV.
|
|
| 4. |
- Kalinina, E, et al.
(author)
-
Comparative study of 4H-SiC irradiated with neutrons and heavy ions
- 2005
-
In: SILICON CARBIDE AND RELATED MATERIALS 2004. - ZURICH-UETIKON : TRANS TECH PUBLICATIONS LTD. - 0878499636 ; , s. 377-380
-
Conference paper (peer-reviewed)abstract
- The influence of the irradiation with neutrons, Kr+ (245 MeV) and Bi+ (710 MeV) ions on the optical and electrical properties of high-resistivity, high-purity 4H-SiC epitaxial layers grown by chemical vapor deposition was investigated using photoluminescence and deep-level transient spectroscopy. Electrical characteristics were studied using Al and Cr Schottky barriers as well as p(+)-n-n(+) diodes fabricated by Al ion implantation on this epitaxial layers. It was found that both "light" neutrons and high energy heavy ions introduced identical defect centers in 4H-SiC. So, even at extremely high density of the ionization energy of 34 keV/mn, typical for Bi+ ion bombardment, damage structure formation in SiC single crystal is governed by energy loss in elastic collisions.
|
|
| 5. |
- Kalinina, E. V., et al.
(author)
-
Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions
- 2004
-
In: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 38:10, s. 1187-1191
-
Journal article (peer-reviewed)abstract
- Photoluminescence and deep-level transient spectroscopy are used to study the effect of irradiation with fast neutrons and high-energy Kr (235 MeV) and Bi (710 MeV) ions on the optical and electrical properties of high-resistivity high-purity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. Electrical characteristics were studied using the barrier structures based on these epitaxial layers: Schottky barriers with Al and Cr contacts and p(+)-n-n(+) diodes fabricated by Al ion implantation. According to the experimental data obtained, neutrons and high-energy ions give rise to the same defect-related centers. The results show that, even for the extremely high ionization density (34 keV/nm) characteristic of Bi ions, the formation of the defect structure in SiC single crystals is governed by energy losses of particles due to elastic collisions.
|
|
| 6. |
- Kalinina, E., et al.
(author)
-
Characterization of Al-implanted 4H SiC high voltage diodes
- 2002
-
In: Physica Scripta. - 0031-8949 .- 1402-4896. ; T101, s. 207-210
-
Journal article (peer-reviewed)abstract
- The properties of 4H-SiC chemical vapor deposition epitaxial layers were studied by different methods. The effects of structural defects in 4H-SiC epitaxial layers on electrical and luminescence properties of Al high dose ion implanted p(+)-n junctions were studied. It has been shown that the structural imperfections of low-doped layers affect some electrical characteristics of the ion doped p(+)-n junctions created in these epitaxial layers.
|
|
