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  • Markevich, V.P., et al. (author)
  • Tin-vacancy complex in germanium
  • 2011
  • In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 109, s. 083705-1
  • Journal article (peer-reviewed)abstract
    • Electrically active defects introduced into Ge crystals co-doped with tin and phosphorus atoms by irradiation with 6 MeV electrons have been studied by means of transient capacitance techniques and ab-initio density functional modeling. It is shown that Sn atoms are effective traps for vacancies (V) in the irradiated Ge:Sn+P crystals. The electronic structure of Sn-V is unraveled on the basis of hybrid states from a Sn atom and a divacancy. Unlike the case for Si, Sn-V in Ge is not a donor. A hole trap with 0.19 eV activation energy for hole emission to the valence band is assigned to an acceptor level of the Sn-V complex. The Sn-V complex anneals out upon heat-treatments in the temperature range 50–100 °C. Its disappearance is accompanied by the formation of phosphorus-vacancy centers.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Rayson, Mark (1)
Peaker, A.R. (1)
Coutinho, J. (1)
Carvalho, A (1)
Markevich, V.P. (1)
Hamilton, B. (1)
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Lastovskii, S.B. (1)
Litvinov, V.V. (1)
Pokotilo, Yu.M. (1)
Briddon, P (1)
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University
Luleå University of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
2011 (1)

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