SwePub
Sök i SwePub databas

  Extended search

Träfflista för sökning "WFRF:(Puska MJ) "

Search: WFRF:(Puska MJ)

  • Result 1-2 of 2
Sort/group result
   
EnumerationReferenceCoverFind
1.
  • Staab, TEM, et al. (author)
  • Calculated positron annihilation parameters for defects in SiC
  • 2000
  • In: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 353-3, s. 533-536
  • Journal article (peer-reviewed)abstract
    • We calculate positron annihilation parameters (lifetime and high momentum part of the Doppler broadening of the annihilation radiation) for different native defects in 4H-SiC. To figure out the influence of lattice relaxations, we consider atomic coordinates in the ideal lattice as well as those determined as minimum energy structures from ab-initio calculations. We then compare the calculated annihilation parameters to experimental data on irradiated bulk SiC, where vacancies in different sublattices can be identified. If we qualitatively take into account the influence of the trapped positron on the relaxation pattern, we find good agreement with experimental data.
  •  
2.
  • Tuomisto, F, et al. (author)
  • Dissociation of V-Ga-O-N complexes in HVPE GaN by high pressure and high temperature annealing
  • 2006
  • In: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 243:7, s. 1436-1440
  • Journal article (peer-reviewed)abstract
    • We have used positron annihilation spectroscopy to study the high-pressure annealing induced thermal recovery of vacancy defects in free-standing GaN grown by hydride vapor phase epitaxy (HYPE). The results show that the in-grown Ga vacancy complexes recover after annealing at 1500-1700 K. Comparison of the experimental positron data with ab-initio calculations indicates that the Doppler broadening measurement of the electron momentum distribution is sensitive enough to distinguish between the N and O atoms surrounding the Ga vacancy. We show that the difference between the isolated V-Ga in electron irradiated GaN and the V-Ga-O-N complexes in highly O-doped GaN is clear, and the Ga vacancy related defect complexes that start dissociating at 1500 K can be identified as V-Ga-O-N pairs.
  •  
Skapa referenser, mejla, bekava och länka
  • Result 1-2 of 2

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view