| 1. |
|
|
| 2. |
|
|
| 3. |
- Fransson, Jonas, et al.
(author)
-
Pauli spin blockade in weakly coupled double quantum dots
- 2006
-
In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 73:20, s. 205333-
-
Journal article (peer-reviewed)abstract
- In a two-level system, constituted by two serially coupled single level quantum dots, coupled to external leads we find that the current is suppressed in one direction of biasing caused by a fully occupied two-electron triplet state in the interacting region. The efficiency of the current suppression is governed by the ratio between the interdot tunnelling rate and the level offset. In the opposite bias direction, the occupation of the two-electron triplet is lifted which allows a larger current to flow through the system, where the conductance is provided by transitions between one-electron states and two-electron singlet states. It is also shown that a finite ferromagnetic interdot exchange interaction provides an extended range of the current suppression, while an antiferromagnetic exchange leads to a decreased range of the blockade regime.
|
|
| 4. |
- Råsander, Mikael, et al.
(author)
-
Elastic constants of the II–IV nitride semiconductors MgSiN2, MgGeN2 and MgSnN2
- 2018
-
In: Journal of Physics D. - : Institute of Physics (IOP). - 0022-3727 .- 1361-6463. ; 51
-
Journal article (peer-reviewed)abstract
- The single crystal elastic constants, polycrystalline elastic moduli and related properties of orthorhombic MgSiN2, MgGeN2 and MgSnN2 have been calculated using density functional theory and compared to the related wurtzite structured AlN, GaN and InN. Since there are no experimental studies of single crystal elastic properties of neither MgSiN2, MgGeN2 or MgSnN2, we have established the accuracy of the calculations by comparison with experimental data for AlN, GaN and InN. The calculated polycrystalline elastic moduli of MgSiN2 are found to be in good agreement with available experimental elastic moduli. It will be shown that MgSiN2 and MgGeN2 have a small xy-plane lattice mismatch with AlN and GaN, respectively, while at the same time being significantly softer than both AlN and GaN. This shows that MgSiN2 and MgGeN2 should be possible to be grown on AlN and GaN without significant lattice mismatch or strain.
|
|
