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- Saharil, Farizah, et al.
(author)
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LOW-TEMPERATURE CMOS-COMPATIBLE 3D-INTEGRATION OF MONOCRYSTALLINE-SILICON BASED PZT RF MEMS SWITCH ACTUATORS ON RF SUBSTRATES
- 2010
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In: MEMS 2010. - New York : Ieee. - 9781424457649 ; , s. 47-50
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Conference paper (peer-reviewed)abstract
- This paper presents a low temperature (200 degrees C) CMOS-compatible fabrication process for integrating high-temperature deposited lead zirconate titanate (PZT) on this film monocrystalline-silicon piezoelectric actuators, onto an RF substrate, and successful demonstration of this process for fabrication of metal-contact RF-MEMS switches. The patterned PZT/silicon multi-layer stack is transfer-bonded from a silicon-on-insulator (SOI) donor wafter to AF-45 glass RF substrate using adhesive wafer transfer bonding. Furthermore, several strategies have been investigate to drastically reduce the post bonding misalignment created by the shear forces between the bonding chucks during wafer bonding.
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| 3. |
- Cheng, Shi, et al.
(author)
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Switched beam antenna based on RF MEMS SPDT switch on quartz substrate
- 2009
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In: IEEE Antennas and Wireless Propagation Letters. - 1536-1225 .- 1548-5757. ; 8, s. 383-386
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Journal article (peer-reviewed)abstract
- This letter demonstrates a 20-GHz radio frequency microelectromechanical system (RF MEMS)-based electrically switchable antenna on a quartz substrate. Two quasi-Yagi antenna elements are monolithically integrated with a single-pole double-throw (SPDT) MEMS switch router network on a 21 mm x 8 mm chip. Electrical beam steering between two opposite directions is achieved using capacitive MEMS SPDT switches in the router. Port impedance and radiation patterns are studied numerically and experimentally. Measured results show that the switched beam antenna features a 27% impedance bandwidth (S-11 = -10 dB), a gain of 4.6 dBi, and a front-to-back ratio of 14 dB at 20 GHz when the control voltage is applied to one of the switch pairs of the SPDT switch.
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| 6. |
- Malmqvist, Robert, et al.
(author)
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A K-Band RF-MEMS-Enabled Reconfigurable and Multifunctional Low-Noise Amplifier Hybrid Circuit
- 2011
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In: Active and Passive Electronic Components. - : Hindawi Publishing Corporation. - 0882-7516 .- 1563-5031. ; 2011, s. 284767-
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Journal article (peer-reviewed)abstract
- A K-band (18–26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LNA circuits (paths) present 16.0 dB/8.2 dB, 2.8 dB/4.9 dB and 15 dBm/20 dBm of small-signal gain, noise figure, and 1 dB compression point at 24 GHz, respectively. Compared with the two (fixed) LNA subcircuits used within this design, the MEMS-switched LNA circuit functions show minimum 0.6–1.3 dB higher NF together with similar values ofP1 dBat 18–25 GHz. The gain of one LNA circuit path is reduced by 25–30 dB when the MEMS switch and active circuitry used within in the same switching branch are switched off to select the other LNA path and minimise power consumption.
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