| 1. |
- Mahadeva, Sreekanth K., et al.
(author)
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A comparative study of room temperature ferromagnetism in MgO films deposited by rf/dc sputtering using high purity Mg and MgO targets
- 2013
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In: Materials Express. - : American Scientific Publishers. - 2158-5849 .- 2158-5857. ; 3:4, s. 328-334
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Journal article (peer-reviewed)abstract
- Thin films of nanocrystalline MgO were deposited on glass/Si substrates by rf/dc sputtering from metallic Mg, and ceramic MgO targets. The purpose of this study is to identify the differences in the properties, magnetic in particular, of MgO films obtained on sputter deposition from 99.99% pure metallic Mg target in a controlled [Nitrogen + Oxygen partial pressure (O(2)pp)] atmosphere as against those deposited using an equally pure ceramic MgO target in argon + identical oxygen ambience conditions while maintaining the same total pressure in the chamber in both cases. Characterization of the films was carried out by X-ray diffraction, focussed ion beam cross sectioning, atomic force microscopy and SQUID-magnetometry. The 'as-obtained' films from pure Mg target are found to be predominantly X-ray amorphous, while the ceramic MgO target gives crystalline films, (002) oriented with respect to the film plane. The films consisted of nano-crystalline grains of size in the range of about 0.4 to 4.15 nm with the films from metallic target being more homogeneous and consisting of mostly subnanometer grains. Both the types of films are found to be ferromagnetic to much above room temperature. We observe unusually high maximum saturation magnetization (MS) values of 13.75 emu/g and similar to 4.2 emu/g, respectively for the MgO films prepared from Mg, and MgO targets. The origin of magnetism in MgO films is attributed to Mg vacancy (V-Mg), and 2p holes localized on oxygen sites. The role of nitrogen in enhancing the magnetic moments is also discussed.
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| 2. |
- Araujo, Carlos Moyses, et al.
(author)
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Disorder-induced Room Temperature Ferromagnetism in Glassy Chromites
- 2014
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In: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322. ; 4, s. 4686-
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Journal article (peer-reviewed)abstract
- We report an unusual robust ferromagnetic order above room temperature upon amorphization of perovskite [YCrO3] in pulsed laser deposited thin films. This is contrary to the usual expected formation of a spin glass magnetic state in the resulting disordered structure. To understand the underlying physics of this phenomenon, we combine advanced spectroscopic techniques and first-principles calculations. We find that the observed order-disorder transformation is accompanied by an insulator-metal transition arising from a wide distribution of Cr-O-Cr bond angles and the consequent metallization through free carriers. Similar results also found in YbCrO3-films suggest that the observed phenomenon is more general and should, in principle, apply to a wider range of oxide systems. The ability to tailor ferromagnetic order above room temperature in oxide materials opens up many possibilities for novel technological applications of this counter intuitive effect.
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| 3. |
- Araujo, C. Moysés, et al.
(author)
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Room temperature ferromagnetism in pristine MgO thin films
- 2010
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 96:23
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Journal article (peer-reviewed)abstract
- Robust ferromagnetic ordering at, and well above room temperature is observed in pure transparent MgO thin films (<170 nm thick) deposited by three different techniques. Careful study of the wide scan x-ray photoelectron spectroscopy rule out the possible presence of any magnetic contaminants. In the magnetron sputtered films, we observe magnetic phase transitions as a function of film thickness. The maximum saturation magnetization of 5.7 emu/cm(3) is measured on a 170 nm thick film. The films above 500 nm are found to be diamagnetic. Ab initio calculations suggest that the ferromagnetism is mediated by cation vacancies.
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| 4. |
- Biswas, Anis, et al.
(author)
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The effect of oxygen partial pressure during deposition in the magnetic properties of ZnO thin film
- 2011
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In: Mater Res Soc Symp Proc. - : Springer Science and Business Media LLC. - 9781605112695 ; , s. 117-122
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Conference paper (peer-reviewed)abstract
- We have studied the magnetic properties of 100 nm thick ZnO thin films prepared by magnetron sputtering in different oxygen partial pressures (ratio of oxygen pressure to total pressure in deposition chamber, P Oxy). Only the films fabricated at P Oxy below ∼ 0.5 show room temperature ferromagnetism. The saturation magnetization at room temperature is initially found to increase as P Oxy increases and reaches maximum value of ∼ 5 emu/gm at P Oxy ∼ 0.3 and then starts to decrease and becomes diamagnetic for P Oxy > 0.5. From small angle XRD study of structural properties of the films, we find that the lattice stress developed in the film along c-axis also exhibits a similar behavior with the variation of P Oxy. Thus, both the room temperature ferromagnetism and lattice stress appear to originate from the intrinsic defects present in the sample.
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| 5. |
- Chastellain, M., et al.
(author)
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Superparamagnetic silica-iron oxide nanocomposites for application in hyperthermia
- 2004
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In: Advanced Engineering Materials. - : Wiley. - 1438-1656 .- 1527-2648. ; 6:4, s. 235-241
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Journal article (peer-reviewed)abstract
- Superparamagnetic iron oxide particles embedded in silica are studied for application in hyperthermia. The temperature increase is studied when submitting the samples to a weak alternating magnetic field. The influence of the iron oxide size distribution, saturation magnetization, out of phase susceptibility and anisotropy constant is discussed. A theoretical calculation of power loss is carried out and agrees with experimental data.
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| 6. |
- Chey, Chan Oeurn, et al.
(author)
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Synthesis of Fe-Doped ZnO Nanorods by Rapid Mixing Hydrothermal Method and Its Application for High Performance UV Photodetector
- 2014
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In: Journal of Nanomaterials. - : Hindawi Limited. - 1687-4110 .- 1687-4129. ; , s. 524530-
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Journal article (peer-reviewed)abstract
- We have successfully synthesized Fe-doped ZnO nanorods by a new and simple method in which the adopted approach is by using ammonia as a continuous source of OH- for hydrolysis instead of hexamethylenetetramine (HMT). The energy dispersive X-ray (EDX) spectra revealed that the Fe peaks were presented in the grown Fe-doped ZnO nanorods samples and the X-ray photoelectron spectroscopy (XPS) results suggested that Fe3+ is incorporated into the ZnO lattice. Structural characterization indicated that the Fe-doped ZnO nanorods grow along the c-axis with a hexagonal wurtzite structure and have single crystalline nature without any secondary phases or clusters of FeO or Fe3O4 observed in the samples. The Fe-doped ZnO nanorods showed room temperature (300 K) ferromagnetic magnetization versus field (M-H) hysteresis and the magnetization increases from 2.5 mu emu to 9.1 mu emu for Zn0.99Fe0.01O and Zn0.95Fe0.05O, respectively. Moreover, the fabricated Au/Fe-doped ZnO Schottky diode based UV photodetector achieved 2.33 A/W of responsivity and 5 s of time response. Compared to other Au/ZnO nanorods Schottky devices, the presented responsivity is an improvement by a factor of 3.9.
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| 7. |
- Dahlberg, D, et al.
(author)
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Measurements of the ferromagnetic/antiferromagnetic interfacial exchange energy in CO/CoO and Fe/FeF2 layers
- 1998
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 83:11, s. 6893-6895
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Journal article (peer-reviewed)abstract
- Two measurement techniques, both relying on reversible rotations of the magnetization, have been used to determine the magnitude of the interfacial exchange energy (IEE) between ferromagnetic and antiferromagnetic (F/AF) layers. One technique is to use the anisotropic magnetoresistance to determine rotations of the magnetization away from the unidirectional easy axis, where the rotation is accomplished by applying external magnetic fields less than the effective F/AF exchange field. The second technique uses measurements of the ac susceptibility as a function of the angle between the ac field and the unidirectional exchange field. Both of the reversible process techniques result in values of the IEE larger (by as much as a factor of 10 in Co/CoO bilayers) than the traditional irreversible technique of measuring a shift in the hysteresis loop. The ac susceptibility technique was also used to measure one Fe/FeF2 bilayer. For this sample, the IEE values obtained by reversible and irreversible methods are equivalent.
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| 8. |
- Davydova, Alexandra, et al.
(author)
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Fabrication of thin ZnO films with wide-range tuned optical properties by reactive magnetron sputtering
- 2018
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In: Semiconductor Science and Technology. - : Institute of Physics Publishing (IOPP). - 0268-1242 .- 1361-6641. ; 33:2
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Journal article (peer-reviewed)abstract
- We report the manufacturing of thin zinc oxide films by reactive magnetron sputtering at room temperature, and examine their structural and optical properties. We show that the partial oxygen pressure in DC mode can have dramatic effect on absorption and refractive index (RI) of the films in a broad spectral range. In particular, the change of the oxygen pressure from 7% to 5% can lead to either conventional crystalline ZnO films having low absorption and characteristic descending dependence of RI from 2.4-2.7 RIU in the visible to 1.8-2 RIU in the near-infrared (1600 nm) range, or to untypical films, composed of ZnO nano-crystals embedded into amorphous matrix, exhibiting unexpectedly high absorption in the visible-infrared region and ascending dependence of RI with values varying from 1.5 RIU in the visible to 4 RIU in the IR (1600 nm), respectively. Untypical optical characteristics in the second case are explained by defects in ZnO structure arising due to under-oxidation of ZnO crystals. We also show that the observed defect-related film structure remains stable even after annealing of films under relatively high temperatures (30 min under 450 degrees C). We assume that both types of films can be of importance for photovoltaic (as contact or active layers, respectively), as well as for chemical or biological sensing, optoelectronics etc.
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| 9. |
- Emam, A. N., et al.
(author)
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Hybrid magnetic-plasmonic nanocomposite : Embedding cobalt clusters in gold nanorods
- 2015
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In: RSC Advances. - : Royal Society of Chemistry (RSC). - 2046-2069. ; 5:44, s. 34696-34703
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Journal article (peer-reviewed)abstract
- We developed a method to fabricate hybrid magnetic-plasmonic nanorods (Au-Co NRs) via a modified seed mediated method. The only modification is to use cobalt ions instead of Au3+ in the preparation of the seed solution to obtain gold nanorods doped with Co clusters. By adjusting the amount of cobalt seed solution, Au-Co NRs of controlled aspect ratio can be obtained. The optical properties of the obtained Au-Co NRs were investigated and compared to those of the pure Au NRs. A slight shift and broadening were observed in the alloys compared to the pure ones, which was attributed to the presence of Co clusters leading to suppression of the dielectric properties. High resolution transmission electron microscopy (HRTEM) images indicate the existence of Co clusters in situ in the Au NR host and clearly show the metal-metal interface. The magnetic properties of the obtained Au-Co NRs increase as the concentration of dopant Co cluster seeds increases, as investigated by vibrating sample magnetometry (VSM). Our approach allows us to design nanomaterials of controlled shape, optical and magnetic properties which have many promising applications in tharanostics and photoelectronics.
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| 10. |
- Fan, Jincheng, et al.
(author)
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P-Type ZnO materials : Theory, growth, properties and devices
- 2013
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In: Progress in Materials Science. - : Elsevier BV. - 0079-6425 .- 1873-2208. ; 58:6, s. 874-985
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Journal article (peer-reviewed)abstract
- In the past 10 years, ZnO as a semiconductor has attracted considerable attention due to its unique properties, such as high electron mobility, wide and direct band gap and large exciton binding energy. ZnO has been considered a promising material for optoelectronic device applications, and the fabrications of high quality p-type ZnO and p-n junction are the key steps to realize these applications. However, the reliable p-type doping of the material remains a major challenge because of the self-compensation from native donor defects (VO and Zni) and/or hydrogen incorporation. Considerable efforts have been made to obtain p-type ZnO by doping different elements with various techniques. Remarkable progresses have been achieved, both theoretically and experimentally. In this paper, we discuss p-type ZnO materials: theory, growth, properties and devices, comprehensively. We first discuss the native defects in ZnO. Among the native defects in ZnO, VZn and O i act as acceptors. We then present the theory of p-type doping in ZnO, and summarize the growth techniques for p-type ZnO and the properties of p-type ZnO materials. Theoretically, the principles of selection of p-type dopant, codoping method and XZn-2VZn acceptor model are introduced. Experimentally, besides the intrinsic p-type ZnO grown at O-rich ambient, p-type ZnO (MgZnO) materials have been prepared by various techniques using Group-I, IV and V elements. We pay a special attention to the band gap of p-type ZnO by band-gap engineering and room temperature ferromagnetism observed in p-type ZnO. Finally, we summarize the devices based on p-type ZnO materials.
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