| 1. |
- Dancila, Dragos, et al.
(author)
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Wide Band On-Chip Slot Antenna with Back-Side Etched Trench for W-band Sensing Applications
- 2013
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In: 2013 7th European Conference on Antennas and Propagation (EuCAP). - 9788890701832 ; , s. 1576-1579
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Conference paper (peer-reviewed)abstract
- This paper presents the design and characterization of a highly integrated, wideband on-chip radiometer, composed of a slot antenna, RF-MEMS Dicke Switch, LNA and a wideband power detector. The highly integrated single-chip RF front-end is dedicated for broadband sensing up to 110 GHz. Both antenna and radiometer are fabricated in a 0.25 mu m SiGe BiCMOS process. The antenna design takes benefit of the back-side etched trench, offered by the technology. This is used to reduce losses due to the presence of the low resistivity silicon substrate. Additionally, the trench is specially shaped, as to improve the wideband matching of the antenna. The on-chip slot antenna design covers a wide bandwidth (70-110 GHz) with 0 dBi gain and 64% efficiency, both simulated at 94 GHz. The measured bandwidth spans 85 to 105 GHz. The W-band SiGe detector circuit has close to 20 GHz of operational bandwidth (S-11 <=-10 dB at 75-92 GHz) and presents a responsivity of 3-5kV/W (NEP=10-16 pW/Hz(1/2)) at 83-94 GHz.
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| 2. |
- Elgaard, Christian, et al.
(author)
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Efficient Wideband mmW Transceiver Front End for 5G Base Stations in 22-nm FD-SOI CMOS
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In: IEEE Journal of Solid-State Circuits. - 0018-9200. ; , s. 1-16
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Journal article (peer-reviewed)abstract
- This article presents a fully integrated millimeter-wave (mmW) transceiver front end covering 24.25–29.5 GHz. It features a wideband Doherty power amplifier utilizing adaptive bias and a transmit/receive switch (TRX-switch) that has embedded low noise amplifier to antenna matching. The phase shift of 90 $^\circ$ to the Doherty auxiliary amplifier is achieved using a separate IQ-mixer with rearranged phases in the auxiliary path, ensuring a wideband 90 $^\circ$ phase shift, and avoiding 3-dB loss from radio frequency (RF) input power splitting. Special emphasis is on the analysis of adaptive bias, the Doherty output combiner network, the decoupling capacitors, and the TRX-switch. Including TRX-switch losses of 1.1 dB in transmit mode, the transmitter reaches a saturated output power of 18.3 dBm with a 1-dB output compression point of 15.9 dBm. Stimulated with a 400-MHz 16-QAM orthogonal frequency-division multiplexing (OFDM) IQ-signal at baseband, without digital IQ-compensation and predistortion, the transmitter delivers a 26.5-GHz modulated signal with an output power ( $P_{\rm out}$ ) of 12.8 dBm and an error vector magnitude (EVM) of $-$ 20.2 dB. The complete transmitter, including quadrature local oscillator drivers, then achieves a power added efficiency (PAE) of 5.8%. For a 1600-MHz wide 64-QAM OFDM signal, $P_{\rm out}$ is 9.0 dBm, with an EVM $=$ $-$ 23.3 dB and a complete transmitter PAE of 3.2%. In receive mode including TRX-switch, at 27.25 GHz, the noise figure is below 4 dB with a gain of 23 dB and a third-order input-referred intercept point of $-$ 9 dBm. The active part of the die, manufactured in 22-nm fully depleted silicon on insulator (FD-SOI) CMOS, occupies 2.3 mm $^2$ .
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| 3. |
- Jonsson, Rolf, et al.
(author)
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A W-band power detector RFIC design in 0.13 μm SiGe BiCMOS process
- 2015
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In: Microwave and optical technology letters (Print). - : Wiley. - 0895-2477 .- 1098-2760. ; 57:2, s. 414-417
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Journal article (peer-reviewed)abstract
- This article presents the results of a wideband power detector radio frequency integrated circuit design intended for W-band passive imaging sensors. The power detector was fabricated in a 0.13 mu m SiGe BiCMOS process technology with 300 GHz/500 GHz f(T)/f(max). The experimental results show broadband RF properties such as a responsivity of 40-60 kV/W and a noise equivalent power (NEP) of 0.3-0.4 pW/Hz(1/2) at 70-95 GHz, respectively (the DC power consumption is 225 mu W). To the authors' best knowledge, the SiGe detector design reports the widest s(11) -10 dB bandwidth (s(11)-10 dB at 79-102 GHz) among silicon based W-band power detectors and is competitive with InP-based W-band detectors in terms of a higher responsivity and similar NEP.
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| 4. |
- Malmqvist, Robert, et al.
(author)
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A K-Band RF-MEMS-Enabled Reconfigurable and Multifunctional Low-Noise Amplifier Hybrid Circuit
- 2011
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In: Active and Passive Electronic Components. - : Hindawi Publishing Corporation. - 0882-7516 .- 1563-5031. ; 2011, s. 284767-
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Journal article (peer-reviewed)abstract
- A K-band (18–26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LNA circuits (paths) present 16.0 dB/8.2 dB, 2.8 dB/4.9 dB and 15 dBm/20 dBm of small-signal gain, noise figure, and 1 dB compression point at 24 GHz, respectively. Compared with the two (fixed) LNA subcircuits used within this design, the MEMS-switched LNA circuit functions show minimum 0.6–1.3 dB higher NF together with similar values ofP1 dBat 18–25 GHz. The gain of one LNA circuit path is reduced by 25–30 dB when the MEMS switch and active circuitry used within in the same switching branch are switched off to select the other LNA path and minimise power consumption.
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| 5. |
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| 6. |
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| 7. |
- Reyaz, Shakila Bint, et al.
(author)
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5-35 Ghz Broadband IF Amplifier Section In 0.13 Mu M Sige Technology For W-Band Heterodyne Receiver RFICs
- 2015
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In: Microwave and optical technology letters (Print). - : Wiley. - 0895-2477 .- 1098-2760. ; 57:10, s. 2286-2289
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Journal article (peer-reviewed)abstract
- This letter presents the results of a broadband intermediate frequency (IF) section radio frequency integrated circuit designed for a W-band heterodyne radiometer receiver in a 0.13 mu m SiGe BiC-MOS process. The differential IF section which consists of an amplifier and a power detector uses inductive and resistive matching to obtain a wideband response. The IF amplifier has a measured gain of 10.0-19.5 dB at 2-37 GHz, noise figure of 6-8 dB at 1-26 GHz, and OIP3 of 7-17 dBm at 1-40 GHz. The detector has a measured responsivity of 1 kV/W and an estimated noise equivalent power (NEP) of 4-6 pW/Hz(1/2) at 535 GHz, respectively. For the IF section, the input return loss is better than 10 dB at 7-40 GHz and the responsivity is 10-82 kV/W at 5-35 GHz. The broadband properties over significantly wider bandwidths than earlier reported silicon-based IF amplifier and power detector circuits make the SiGe 5-35 GHz IF section suitable for W-band direct-conversion radiometer receiver Radio Frequency Integrated Circuits with a larger predetection bandwidth and improved sensitivity.
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| 8. |
- Reyaz, Shakila Bint, et al.
(author)
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Millimeter-Wave RF-MEMS SPDT Switch Networks in a SiGe BiCMOS Process Technology
- 2012
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In: 2012 42nd European Microwave Conference (EuMC). - NEW YORK : IEEE. - 9782874870262 ; , s. 1071-1074, s. 691-694
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Conference paper (peer-reviewed)abstract
- This paper presents mm-wave capacitive RF-MEMS based Single-Pole-Double-Throw (SPDT) switches fabricated in a SiGe BiCMOS process technology. Three different SiGe RF-MEMS based SPDTs (targeting the 40-80 GHz range) present 3-4 dB of in-band losses and up to 20-25 dB of isolation, respectively. The measured in-band attenuation of the characterized SiGe MEMS SPDTs corresponds to a loss of 2-3 dB when close to 1 dB of combined losses within the RF pads has been removed. The experimental s-parameter data was obtained from RF-tests of more than 300 characterized SPDT switch networks indicating a high fabrication yield and process repeatability of the fabricated SiGe MEMS circuits. The validated SiGe MEMS switch circuits can enable single-chip reconfigurable ICs for wireless communication and sensing applications up to 100 GHz.
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| 9. |
- Reyaz, Shakila Bint, 1971-
(author)
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Reconfigurable and Wideband Receiver Components for System-on-Chip Millimetre-Wave Radiometer Front-Ends
- 2015
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Doctoral thesis (other academic/artistic)abstract
- This thesis presents solutions and studies related to the design of reconfigurable and wideband receiver circuits for system-on-chip (SoC) radiometer front-ends within the millimetre-wave (mm-wave) range. Whereas many of today’s mm-wave front-ends are bulky and costly due to having discrete RF components, single-chip receiver modules could potentially result in a wider use for emerging applications such as wireless communication, short range radar and passive imaging security sensors if realised with adequate performances and at a lower cost. Three main topics are considered in this thesis, monolithic integration of low-loss RF-MEMS (Dicke) switch networks and switched LNAs in MMIC/RFIC foundry processes, designs of SiGe wideband (IF) amplifier and broadband power detectors up to W-band (75-110 GHz).Low-loss and high isolation GaAs and SiGe RF-MEMS switch networks were designed and characterised for the 30-110 GHz range. A GaAs MEMS Dicke switch network has a measured minimum loss of 1 dB and maximum isolation of 19 dB at 70-96 GHz, respectively, making it a potential candidate in Dicke switched radiometer receivers. Furthermore, single-chip 30 GHz and W-band MEMS Dicke switched LNA designs have been realised for the first time in SiGe BiCMOS and GaAs mHEMT processes, respectively.For a targeted 94 GHz passive imaging application two different receiver topologies have been investigated based on direct-detection and direct-conversion (heterodyne) architectures. An optimised detector design fabricated in a 0.13 μm SiGe process achieves a more wideband input matching than earlier silicon W-band detectors and is competitive with reported III-V W-band detectors in terms of a higher responsivity and similar NEP.A SiGe 2-37 GHz high-gain differential (IF) amplifier design achieves a more wideband matching and an order of magnitude higher linearity than a recent single-ended SiGe LNA. The SiGe IF amplifier was integrated on-chip with a power detector in a 5-35 GHz IF section. Their broadband properties compared with other IF amplifier/detector RFICs, make them suitable for W-band down-conversion receivers with a larger pre-detection bandwidth and improved sensitivity. The experimental results successfully demonstrate the feasibility of the SiGe 5-35 GHz IF section for high performance SoC W-band radiometers using a more wideband heterodyne receiver architecture.
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| 10. |
- Reyaz, Shakila Bint, et al.
(author)
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W-Band RF-MEMS Dicke Switch Networks In A GaAs MMIC Process
- 2013
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In: Microwave and optical technology letters (Print). - : Wiley. - 0895-2477 .- 1098-2760. ; 55:12, s. 2849-2853
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Journal article (peer-reviewed)abstract
- A novel design of a W-band RF-microelectro-mechanical-system (RF-MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0-level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3-1.7 dB (uncapped on-wafer), 1.6-2.0 dB (uncapped chips), and 1.8-2.7 dB (0-level packaged chips) at 70-96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer-level packaged W-band low loss/DC power and high isolation/linearity RF-MEMS Dicke switch circuits made in a GaAs foundry process.
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