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| 2. |
- Bengtsson, Stefan, 1961, et al.
(author)
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Silicon on aluminum nitride structures formed by wafer bonding
- 1994
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In: 1994 IEEE International SOI Conference Proceedings. ; , s. 35-
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Journal article (peer-reviewed)abstract
- This paper deals with the use of reactively sputtered aluminum nitride (AlN) films as insulators for Bond and Etch-back Silicon-On-Insulator (BESOI) materials. In SOI-applications where high power is dissipated in the silicon SOI-film the low thermal conductivity of the buried silicon dioxide layer may cause a temperature rise in the silicon film detrimentally affecting the device performance. An attractive alternative would be to replace the silicon dioxide of the SOI structure with another material, like diamond, silicon carbide or aluminum nitride. The thermal conductivity of AlN is considerably larger than that of Si02. This paper presents results on how sputter deposition of AlN may be combined with wafer bonding for the creation of highly thermally conductive SOI structures
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| 3. |
- Bhaskar, U., et al.
(author)
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On-chip tensile testing of the mechanical and electro-mechanical properties of nano-scale silicon free-standing beams
- 2011
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In: Advanced Materials Research. - 1662-8985 .- 1022-6680. ; 276, s. 117-126
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Journal article (peer-reviewed)abstract
- A simple and versatile on-chip tensile testing method is proposed for the statistical evaluation of size effects on the mechanical strength of silicon thin films along with the simultaneous study of (from low to ultra) strain effects on the carrier transport. Mechanical results are presented on the fracture strength of micro-nano scale silicon beams, followed with a discussion on interface states and problems facing reliable nano-electronic and nano-electromechanical characterizations
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| 5. |
- Divinski, S., et al.
(author)
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Ni radiotracer diffusion in B2 ordered NiFeAl alloys
- 2006
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In: Intermetallics. - : Elsevier BV. - 0966-9795. ; 14:3, s. 308-314
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Journal article (peer-reviewed)abstract
- Ni bulk diffusion was measured in the B2 ordered NiFeAl alloys with a constant Al content of approximately 50 at.%. The 63Ni radioisotope in combination with the radiotracer serial sectioning technique was applied at higher temperatures and the secondary ion mass spectrometry (64Ni isotope) was used in a low temperature range. Arrhenius-type temperature dependencies were established for all studied compositions in the temperature interval from 1050 to 1500 K. As the Fe content x in the Ni 50-xFexAl50 ternary alloys increases, the Ni diffusivity generally increases along the quasi-binary section between stoichiometric NiAl and FeAl. The activation enthalpy Q of Ni diffusion changes strongly non-monotonically in the ternary alloys between the binary end-members NiAl and FeAl revealing a pronounced minimum at the Ni40Fe 10Al50 composition and a conspicuous maximum around the Ni25Fe25Al50 composition. © 2005 Elsevier Ltd. All rights reserved.
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| 6. |
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| 7. |
- Hermansson, Karin, et al.
(author)
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Ultra-clean Si/Si interface formation by surface preparation and direct bonding in ultra-high vacuum
- 1998
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In: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications. ; , s. 401-
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Conference paper (peer-reviewed)abstract
- Silicon surfaces have been cleaned and bonded in ultra-high vacuum at a pressure in the 10-10 torr range. The bonded interfaces show extremely low contamination levels as measured by secondary ion mass spectroscopy. Nevertheless, a potential barrier could be detected at the interface spreading resistance and current vs. temperature measurements. This suggests that the barrier is caused by inevitable dislocation networks due to wafer misorientation, as well as residual oxygen at the interface
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| 9. |
- Hosseini, S.H., et al.
(author)
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Comparison between the bulk and surface composition of the samples from Angooran lead and zinc mine, Zanjan province, Iran
- 2002
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In: 6th Conference on Environment and Mineral Processing. - Ostrava : VSB - Technical University Ostrava, Faculty of Mining and Geology, Institute of Environmental Engineering. - 8024800713 ; , s. 289-294
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Conference paper (peer-reviewed)abstract
- The Angooran Lead & Zinc Mine located in Zanjan province, Iran is one of the largest ones of its kind in the Middle East. At present, a part of the ore body located within host rock mineralised schist is not included in the milling design. According to previous work, wet chemical assay, XRF, XRD and ore microscopy studies of the ore samples show that the ore contains Smithsonite (16%), Mimetite (0.6%), Quartz (52%), Sericite (16.5%), Kaolinite (12%), Iron Oxides Minerals (1.5%), Rutile (0.4%) and other minerals (1%). (Hosseini S.H. et al ,2001) In the present study, XPS (ESCA) and EDX have been utilized, in order to study the characterization of the surface and bulk composition respectively for three fraction of - 250, +200 μm; -200, +150 μm and -150μm. The results of XPS show that these have no difference especially in Zn percentage and also for other elements for three size fractions. It can be concluded that the surface composition are approximately the same for both three-size fractions. A comparison between the data obtained from XPS (Surface Composition) and from EDX Analysis (Bulk Composition) shows that there are some differences for the Si, Fe, and Al content in the ore sample and these differences between XPS and other techniques should be based on the amount of Oxygen for each technique.
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| 10. |
- Jedrasik, Piotr, 1957, et al.
(author)
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Technological and Material Related Challenges for Large Area, High Aspect-Ratio, Near Teradot/Inch(2) Areal Density and Three-Dimensional Structuring of Polyaniline
- 2011
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In: Journal of Nanoscience and Nanotechnology. - : American Scientific Publishers. - 1533-4880 .- 1533-4899. ; 11:10, s. 8924-8935
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Journal article (peer-reviewed)abstract
- In this manuscript we report on a newly developed technology for the nanoscale processing of the conducting polyaniline (PANI) with an unprecedented areal patterning order and density control exceeding 0.25 teradot/inch(2). High resolution electron beam lithography was used to generate ordered 2D and 3D templates. A novel type of resist and dose-modulated 3D-electron beam lithography (RDM-3D-EBL), extensively exploiting the intrinsic properties of resist-electron beam interaction is detailed. Surface initiated and template confined aniline polymerization, through catalytic activity of metallic platinum, was then exploited to provide a genuine method for controlled nanoscale processing of polyaniline, a prototypical conjugated polymer that definitively settled the concept of synthetic metals. Using nanoscale polymerization reactors, ultimate resolution patterning and processing control of single polyaniline nanostructures was feasible. Aspects of the nanoscale polyaniline growth mechanism are discussed and the highly controllable, sub-picogram scale fabrication is emphasized. Near teradot/inch(2) pattern transfer technology, complex 3D structuring and physico-chemical functionalization of polyaniline can be subsequently harnessed to build a large variety of architectures with potential for emerging optoelectronic technologies. The method is scalable, can be applied on virtually any type of flexible or rigid substrates and provides a generic approach for nanopatterning surfaces with functional polymers. Technological and material related fabrication challenges are detailed and discussed.
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