| 1. |
- Davydov, S.Yu., et al.
(author)
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A Simple Model for Calculating the Growth Rate of Epitaxial Layers of Silicon Carbide in Vacuum
- 2004
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In: Semiconductors (Woodbury, N.Y.). - : American Institute of Physics (AIP). - 1063-7826 .- 1090-6479. ; 38:2, s. 150-152
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Journal article (peer-reviewed)abstract
- The temperature dependence of the growth rate of epitaxial layers of silicon carbide in vacuum was calculated within the simple model based on the Hertz-Knudsen equation, taking into account the temperature-dependent sticking coefficient. The calculation results fit the experimental data well. © 2004 MAIK "Nauka/Interperiodica".
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| 2. |
- Lebedev, A.A., et al.
(author)
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Amplification of the signal in triode structures of ion detectors based on 6H-SIC epitaxial films
- 2001
-
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:26, s. 4447-4449
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Journal article (peer-reviewed)abstract
- The possibility of about 50 times the inneramplification of signals in SiC-based detectors of short-range ions is shown. The detector has an n-p-n+-like structure, where the p-type base was grown epitaxially on a 6H n+-SiC substrate. To complete the structure a Schottky barrier was made on top. Detector parameters were investigated in a "floating base" regime. Alpha particles from 244Cm were used and the augmentation of signal (E) with increasing applied voltage (U) was investigated. A superlinear increase of E was observed with a significant (tens of times) amplification of the introduced by the alpha particle nonequilibrium charge. It was also found that the nonuniformity of the diffusion-drift carrier transport parameters in the films does not exceed 10%. © 2001 American Institute of Physics.
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| 3. |
- Strokan, N.B., et al.
(author)
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Detection of strongly and weakly ionizing radiation by triode structure based on SIC films
- 2003
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 93:9, s. 5714-5719
-
Journal article (peer-reviewed)abstract
- The detection of strongly and weakly ionizing radiation by triode structure based on silicon carbide (SiC) films was discussed. The possibility of alpha particle spectrometry in spite of slow carrier transport via diffusion was demonstrated. Analysis showed that the signal generated by weakly ionizing radiation incident on a film had low amplitude.
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| 4. |
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| 5. |
- Strokan, N.B., et al.
(author)
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Radiation resistance of transistor- and diode-type SiC detectors irradiated with 8-MeV protons
- 2004
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In: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 38:7, s. 807-811
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Journal article (peer-reviewed)abstract
- Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ~10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ~30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 × 1013 cm-2, in this case, the resolution is =10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ˜3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 × 1014 cm-2. © 2004 MAIK "Nauka/Interperiodica".
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| 6. |
- Strokan, N.B., et al.
(author)
-
Silicon carbide transistor structures as detectors of weakly ionizing radiation
- 2003
-
In: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 37:1, s. 65-69
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Journal article (peer-reviewed)abstract
- SiC-based nuclear radiation detectors figured prominently in the very first attempts of the 1960s to replace gas in ionization chambers with a more condensed semiconducting medium. However, the dynamics of improvement of SiC in those years was markedly inferior to the progress made in the development of competing materials. This study continues with the investigation of triode detector structures based on "pure" SiC films. It is established that for weakly ionizing radiation (as also in the case of strongly ionizing alpha particles) the signal is amplified by no less than a factor of several tens. This allows SiC films with a thickness of about 10 µm to be used to detect penetrating radiation, e.g., X-rays, since the effective thickness of the films is on the order of hundreds of micrometers. © 2003 MAIK "Nauka/Interperiodica".
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