| 1. |
- Fan, Xuge, et al.
(author)
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Direct observation of grain boundaries in graphene through vapor hydrofluoric acid (VHF) exposure
- 2018
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In: Science Advances. - : American Association for the Advancement of Science. - 2375-2548. ; 4:5
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Journal article (peer-reviewed)abstract
- The shape and density of grain boundary defects in graphene strongly influence its electrical, mechanical, and chemical properties. However, it is difficult and elaborate to gain information about the large-area distribution of grain boundary defects in graphene. An approach is presented that allows fast visualization of the large-area distribution of grain boundary–based line defects in chemical vapor deposition graphene after transferring graphene from the original copper substrate to a silicon dioxide surface. The approach is based on exposing graphene to vapor hydrofluoric acid (VHF), causing partial etching of the silicon dioxide underneath the graphene as VHF diffuses through graphene defects. The defects can then be identified using optical microscopy, scanning electron microscopy, or Raman spectroscopy. The methodology enables simple evaluation of the grain sizes in polycrystalline graphene and can therefore be a valuable procedure for optimizing graphene synthesis processes.
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| 2. |
- Momeni Pakdehi, Davood, et al.
(author)
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Silicon Carbide Stacking-Order-Induced Doping Variation in Epitaxial Graphene
- 2020
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In: Advanced Functional Materials. - : Wiley. - 1616-301X .- 1616-3028. ; 30:45
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Journal article (peer-reviewed)abstract
- Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal silicon carbide (SiC)(0001) substrate and overcompensation by donor-like states related to the buffer layer. The presented work is evidence that this effect is also related to the specific underlying SiC terrace. Here a periodic sequence of non-identical SiC terraces is fabricated, which are unambiguously attributed to specific SiC surface terminations. A clear correlation between the SiC termination and the electronic graphene properties is experimentally observed and confirmed by various complementary surface-sensitive methods. This correlation is attributed to a proximity effect of the SiC termination-dependent polarization doping on the overlying graphene layer. These findings open a new approach for a nano-scale doping-engineering by the self-patterning of epitaxial graphene and other 2D layers on dielectric polar substrates.
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| 3. |
- Schädlich, Philip, et al.
(author)
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Domain Boundary Formation Within an Intercalated Pb Monolayer Featuring Charge-Neutral Epitaxial Graphene
- 2023
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In: Advanced Materials Interfaces. - 2196-7350. ; 10:27
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Journal article (peer-reviewed)abstract
- The synthesis of new graphene-based quantum materials by intercalation is an auspicious approach. However, an accompanying proximity coupling depends crucially on the structural details of the new heterostructure. It is studied in detail the Pb monolayer structure after intercalation into the graphene buffer layer on the SiC(0001) interface by means of photoelectron spectroscopy, x-ray standing waves, and scanning tunneling microscopy. A coherent fraction close to unity proves the formation of a flat Pb monolayer on the SiC surface. An interlayer distance of 3.67 Å to the suspended graphene underlines the formation of a truly van der Waals heterostructure. The 2D Pb layer reveals a quasi ten-fold periodicity due to the formation of a grain boundary network, ensuring the saturation of the Si surface bonds. Moreover, the densely-packed Pb layer also efficiently minimizes the doping influence by the SiC substrate, both from the surface dangling bonds and the SiC surface polarization, giving rise to charge-neutral monolayer graphene. The observation of a long-ranged ((Formula presented.)) reconstruction on the graphene lattice at tunneling conditions close to Fermi energy is most likely a result of a nesting condition to be perfectly fulfilled.
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