| 1. |
- Unterseher, Martin, et al.
(author)
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Mycobiomes of sympatric Amorphophallus albispathus (Araceae) and Camellia sinensis (Theaceae) – a case study reveals clear tissue preferences and differences in diversity and composition
- 2018
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In: Mycological Progress. - : Springer Science and Business Media LLC. - 1617-416X .- 1861-8952. ; 17:4, s. 489-500
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Journal article (peer-reviewed)abstract
- Multiple biotic and abiotic parameters influence the dynamics of individual fungal species and entire communities. Major drivers for tropical plant endophytes are undoubtedly seasonality, local habitat conditions and biogeography. However, host specialization and tissue preferences also contribute to the structuring of endophytic mycobiomes. To elucidate such specializations and preferences, we sampled two commercially important, unrelated plant species, Amorphophallus albispathus and Camellia sinensis (tea plant) simultaneously at close proximity. The mycobiomes of different tissue types were assessed with high-throughput amplicon sequencing of the internal transcribed spacer DNA region. Both plants hosted different fungal communities and varied in α- and β-diversity, despite their neighboring occurrence. However, the fungal assemblages of Amorphophallus leaflets shared taxa with the mycobiomes of tea leaves, thereby suggesting common driving forces for leaf-inhabiting fungi irrespective of host plant identity. The mycobiome composition and diversity of tea leaves was clearly driven by leaf age. We suggest that the very youngest tea leaves are colonized by stochastic processes, while mycobiomes of old leaves are rather similar as the result of progressive succession. The biodiversity of fungi associated with A. albispathus was characterized by a large number of unclassified OTUs (at genus and species level) and by tissue-specific composition.This study is the first cultivation-independent high-throughput assessment of fungal biodiversity of an Amorphophallus species, and additionally expands the knowledge base on fungi associated with tea plants.
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| 2. |
- Hertel, Stefan, et al.
(author)
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Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics
- 2012
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In: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 3
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Journal article (peer-reviewed)abstract
- Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10 4 and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.
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| 3. |
- Mikhaylov, Aleksey I., et al.
(author)
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Effect of phosphorus implantation prior to oxidation on electrical properties of thermally grown SiO2/4H-SiC MOS structures
- 2015
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In: Mater. Sci. Forum. - : Trans Tech Publications Ltd. - 9783038352945 ; , s. 133-138
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Conference paper (peer-reviewed)abstract
- The electrical properties of metal-oxide-semiconductor (MOS) devices fabricated using dry oxidation on phosphorus-implanted n-type 4H-SiC (0001) epilayers have been investigated. MOS structures were compared in terms of interface traps and reliability with reference sample which was produced by dry oxidation under the same conditions. The notably lower interface traps density measured in MOS capacitor with phosphorus concentration exceeding 1018 cm-3 at the SiO2/SiC interface was attributed to interface traps passivation by incorporated phosphorus ions. © (2015) Trans Tech Publications, Switzerland.
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| 4. |
- Mikhaylov, Aleksey I., et al.
(author)
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On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO2 produced by thermal oxidation in dry oxygen
- 2014
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In: Semiconductors (Woodbury, N.Y.). - : Maik Nauka-Interperiodica Publishing. - 1063-7826 .- 1090-6479. ; 48:12, s. 1581-1585
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Journal article (peer-reviewed)abstract
- A method is suggested for reducing the density of surface states at the 4H-SiC/SiO2 interface by the implantation of phosphorus ions into a 4H-SiC epitaxial layer immediately before the growth of a gate insulator in an atmosphere of dry oxygen. A significant decrease in the density of surface states is observed at a phosphor-ion concentration at the SiO2/SiC interface exceeding 1018 cm−3. However, together with the passivation of surface states, the introduction of phosphorus ions leads to an increase in the built-in charge in the insulator and also slightly deteriorates the reliability of the gate insulator fabricated by this technique.
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| 5. |
- Sledziewski, Tomasz, et al.
(author)
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Reduction of density of 4H-SiC/SiO2 interface traps by pre-oxidation phosphorus implantation
- 2014
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In: Materials Science Forum. - 9783038350101 ; , s. 575-578
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Conference paper (peer-reviewed)abstract
- The effect of phosphorus (P) on the electrical properties of the 4H-SiC/SiO2 interface was investigated. Phosphorus was introduced by surface-near ion implantation with varying ion energy and dose prior to thermal oxidation. Secondary ion mass spectrometry revealed that only part of the implanted P followed the oxidation front to the interface. A negative flatband shift due to residual P in the oxide was found from C-V measurements. Conductance method measurements revealed a significant reduction of density of interface traps Dit with energy EC-Eit > 0.3 V for P+-implanted samples with [P]interface = 1.5 · 1018 cm-3 in the SiC layer at the interface. .
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