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- Segercrantz, N., et al.
(author)
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Defect studies in MBE grown GaSb1-x Bi x layers
- 2014
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In: AIP Conference Proceedings. - : AIP Publishing LLC. - 1551-7616 .- 0094-243X. ; 1583, s. 174-177
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Conference paper (peer-reviewed)abstract
- Positron annihilation spectroscopy in Doppler broadening mode is used to study epitaxial layers of GaSb 1-x Bi x on undoped GaSb. The samples were grown by Molecular Beam Epitaxy at different temperatures and with different Bi/Sb beam equivalent pressure ratios resulting in Bi concentrations of 0-0.7 %. The results show a relationship between the growth parameters and Doppler broadening parameters. Incorporating Bi into GaSb decreases the vacancy concentration in the epitaxial layers compared to the sample with no Bi in the epitaxial layer.
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| 2. |
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| 3. |
- Segercrantz, N., et al.
(author)
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Point defect balance in epitaxial GaSb
- 2014
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 105:8, s. art. no. 082113-
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Journal article (peer-reviewed)abstract
- Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.
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