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1.	Butorin, SM, et al. (author) Resonant inelastic soft-X-ray scattering at the 4d edge of Ce-based heavy-fermion materials 1999 In: JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA. - 0368-2048. ; 103, s. 783-786 Journal article (other academic/artistic)abstract Resonant X-ray scattering measurements were performed on CeB6, CeAl, gamma-Ce, and alpha-Ce at various incident-photon energies near the Ce 4d threshold. A pronounced inelastic scattering structure which has 4f character is observed at about 4 eV below th
2.	Butorin, SM, et al. (author) Resonant X-ray fluorescence spectroscopy of correlated systems: A probe of charge-transfer excitations 1996 In: PHYSICAL REVIEW LETTERS. - : AMER INST PHYSICS. - 0031-9007. ; 77:3, s. 574-577 Journal article (other academic/artistic)abstract X-ray fluorescence spectroscopy with monochromatic photon excitation is presented as a tool for studies of charge-transfer excitations in correlated systems, using CeO2 and UO3 as examples. Ce 4f --> 3d and U 5f --> 3d x-ray fluorescence, with excitation
3.	CHAKARIAN, V, et al. (author) THE ADSORPTION OF I2 ON SI(111)-7X7 STUDIED BY SOFT-X-RAY PHOTOEMISSION 1993 In: Surface Science. - 0039-6028 .- 1879-2758. ; 296:3, s. 383-392 Journal article (peer-reviewed)abstract The adsorption Of I2 on Si(111)-7 x 7 at room temperature is studied with soft X-ray photoelectron spectroscopy. I2 adsorbs dissociatively, forming a mixture of SiI, SiI2 and SiI3 moieties, of which SiI dominates. The Fermi level is pinned near mid-gap, moving slightly towards the conduction band as the I coverage increases. The surface work function increases monotonically with I coverage. The I 4d core-level displays a single chemical state, which decreases in binding energy with increasing coverage. Analysis of the Si 2p core-level spectra shows that the adsorption proceeds first by attachment of I to the dangling bonds of the 7 x 7 unit cell and that, at saturation, 1.57 +/- 0.05 ML of I atoms are adsorbed in 1.10 +/- 0.02 ML of SiI(x) groups. These results indicate that substrate Si-Si bonds are broken by reaction with I2. The total I coverage is limited, however, by the availability Of surface dangling bonds that are required to initiate the dissociation Of I2 molecules.
4.	McGuinness, C, et al. (author) High-resolution X-ray emission and absorption study of the B 2p valence band electronic structure of MgB2 2001 In: EUROPHYSICS LETTERS. - : E D P SCIENCES. - 0295-5075. ; 56:1, s. 112-118 Language: English Journal article (peer-reviewed)abstract The occupied and unoccupied valence band states of MgB2 have been studied using high-resolution soft X-ray emission and soft X-ray absorption spectroscopies. In particular, the B 2p partial density of states was measured near the Fermi level. The states a
5.	VAREKAMP, PR, et al. (author) A SYNCHROTRON PHOTOEMISSION-STUDY OF THE REACTION OF IODINE WITH GAAS(001) 1995 In: Vacuum. - 0042-207X .- 1879-2715. ; 46:8-10, s. 1231-1232 Journal article (peer-reviewed)

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Type of publication: journal article (5)

Type of content: peer-reviewed (3); other academic/artistic (2)

Author/Editor: Shuh, DK (5); GUO, JH (3); NORDGREN, J (3); BUTORIN, SM (3); Karlsson, Ulf O. (2); HAKANSSON, MC (2); show more...; YARMOFF, JA (2); Tanaka, S. (1); Ma, Y. (1); Takahashi, T. (1); Schneider, G (1); Reilly, J (1); Ilver, L (1); Kanski, J (1); WASSDAHL, N (1); Kotani, A (1); Smith, KE (1); Ivanov, K (1); Magnuson, Martin (1); Kunii, S. (1); MANCINI, DC (1); Nakazawa, M (1); Uozumi, T (1); Myano, KE (1); Karlin, BA (1); CHAKARIAN, V (1); McGuinness, C (1); VAREKAMP, PR (1); Vogt, T. (1); Johnson, PD (1); Tu, JJ (1); HE, ZQ (1); show less...

University: Uppsala University (3); Royal Institute of Technology (2)

Language: English (5)

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