| 1. |
- Stake, Jan, 1971, et al.
(författare)
-
Terahertz technology and applications
- 2008
-
Ingår i: International Symposium on Terahertz between Japan and Sweden.
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- THz or submillimetre-wave sensing covers the frequency range from 300 GHz to 10 THz (wavelengths from 1 mm to 30 µm). With energy levels in the 1.2-40 meV range, terahertz interactions with matter involve intermolecular, rather than atomic transitions. This gives rise to some imaging and spectroscopy applications that are unique to this particular region of the electromagnetic spectrum. Many polar molecules in the low pressure gaseous state have strong, narrow band, vibrational and rotational emission or absorption modes that peak in this regime and are used as probes for quantum chemistry, astrophysical processes and the dynamics of planetary atmospheres, including the Earth. Still, the terahertz spectral region is by far the least explored portion of the electromagnetic spectrum. A great obstacle has been the absence of robust and reasonable inexpensive receiver components that can operate at room temperature. The talk will consist of two parts: a) room temperature technology for THz applications and b) terahertz applications in biology and medicine.At Chalmers, several key technologies are explored for future THz systems such as radiometers, radars, spectrometers and communication links for frequencies from approximately 100GHz to several THz. Transistors with 50 nm gate length based on the two dimensional electron gas can at present be used for frequencies up to and above 300 GHz for circuits such as amplifiers, frequency mixers, frequency multipliers, oscillators, and modulators. For even higher frequencies, submicron low noise Schottky diodes are used for heterodyne mixers. We are currently pursuing studies of high functionality THz mixers (SSB) and in-house fabrication of monolithically integrated Schottky diode circuits. Results and progress on single side band mixers at 340 GHz aimed for future climate research satellites such as the ESA PREMIER mission. Furthermore, single chip receivers (MMIC) up to 220 GHz for imaging applications will be presented.THz imaging and spectroscopy for biomedical applications is being targeted for the very first time, including assessment of protein conformational states, molecular binding and interaction, DNA hybridization, isomer identification, skin hydration level, drug delivery, wound healing, tumour identification and margin assessment, and cell processes. The submillimeter wave advanced technology group at Caltech, in conjunction with the group at Chalmers (J.Stake was visiting Caltech under a sabbatical), set up a very flexible exposure and monitoring system to be used to systematically investigate the interaction of THz radiation with cells.The talk will cover the latest results obtained from Chalmers on MMICs and Schottky diode mixers for terahertz frequencies (sensors), as well as results from initial investigations towards thermal and non-thermal effects of THz radiation on biological systems (Caltech/JPL-Chalmers).
|
|
| 2. |
|
|
| 3. |
- Anderberg, Martin, 1992, et al.
(författare)
-
A 183-GHz Schottky diode receiver with 4 dB noise figure
- 2019
-
Ingår i: IEEE MTT-S International Microwave Symposium Digest. - : IEEE. - 0149-645X. ; 2019-June, s. 172-175
-
Konferensbidrag (refereegranskat)abstract
- Atmospheric science based on space-borne millimeter wave measurements require reliable and state-of-the art receivers. In particular, the water vapor line at 183.3 GHz motivates the development of sensitive mixers at this frequency. Traditional assembly techniques employed in the production of Schottky diode receivers involve flip-chip mounting and soldering of discrete dies, which prohibit the implementation of reliable and repeatable production processes. In this work, we present a subharmonic 183 GHz mixer implementing a repeatable assembly method using beamlead Schottky diodes. The mixer was integrated with a InP HEMT MMIC low noise intermediate frequency amplifier resulting in a record-low receiver noise temperature of 450 K at 1 mW of local oscillator power measured at room-temperature. The measured Allan time was 10 s and the third order local oscillator spurious power was less than -60 dBm. The proposed assembly method is of particular importance for space-borne missions but also applicable to a wide range of terahertz applications.
|
|
| 4. |
- Auriacombe, Olivier, 1989, et al.
(författare)
-
325 GHz and 650 GHz Dual-polarisation receivers Concept
- 2022
-
Ingår i: 32nd International Symposium of Space Terahertz Technology, ISSTT 2022.
-
Konferensbidrag (refereegranskat)abstract
- The integrated dual-polarisation receivers utilize a dual probe concept, efficiently integrating the antenna and MMIC package environment which allows for polarisation discrimination without the use of bulky and lossy external orthomode transducers. This concept increases the sensitivity of the instrument and reduces its size, enabling the development of future earth observation arrays. Omnisys Instruments AB (Sweden) and Chalmers University of Technology (Sweden) are working to demonstrate state-of-the-art dual polarisation capability with two integrated receiver modules at 325 GHz and 650 GHz.
|
|
| 5. |
- Drakinskiy, Vladimir, 1977, et al.
(författare)
-
Development of planar schottky diodes
- 2011
-
Ingår i: 22nd International Symposium on Space Terahertz Technology 2011, ISSTT 2011; Tucson, AZ; United States; 25 April 2011 through 28 April 2011. ; , s. 64-
-
Konferensbidrag (refereegranskat)abstract
- We present the development of an air-bridged planar Schottky diode process at Chalmers University of Technology for use in submillimeter wave mixer and multiplier circuits. As a first step evaluation has been targeted for heterodyne receivers (atmosphere sounders) operation at 340 GHz. The aim is to develop a reliable and repeatable discrete Schottky diode process, with good electrical and mechanical characteristics, which also can be scaled to smaller anodes and extended to integrated diode circuits for THz frequencies. Air-bridged Schottky structures were demonstrated in the late 1980's as a reliable, high quality alternative to whisker contacted diodes. This approach gives a mechanically stable structure and still low parasitic capacitances. The Chalmers diode process is based on electron beam lithography, with a beam spot less than 5 nm, which allows for precise anode and airdridge formation. Hence, this process module can also be utilized for submicron size anodes and. terahertz monolithic integrated circuits (TMICs). Several batches with different shapes of anodes have been fabricated and evaluated with respect to DC/RF-performance. Repeatability of the diode's characteristics indicates good control of the diode fabrication process. We will present the main fabrication route, optimization and repeatability of the diodes as well as RF results from mixer and multiplier measurements up to 340 GHz.
|
|
| 6. |
- Drakinskiy, Vladimir, 1977, et al.
(författare)
-
Development of planar THz Schottky diodes
- 2011
-
Ingår i: 6th ESA Workshop on Millimetre-Wave Technology and Applications.
-
Konferensbidrag (refereegranskat)abstract
- We present the technological development of the air bridge planar Schottky diode process at Chalmers University of Technology for the use as submillimeter wave mixer and multiplier. Our first evaluation is targeted for the heterodyne receivers (i.e. atmosphere sounders) operation at 340 GHz. The aim is to develop a reliable and repeatable Schottky diode process, with good electrical and mechanical characteristics. In addition, the scalability of the diode geometry for diode integration in THz circuits is also taken into account in this development.
|
|
| 7. |
|
|
| 8. |
- Drakinskiy, Vladimir, 1977, et al.
(författare)
-
Reliability study of THz Schottky mixers and HBV frequency multipliers for space applications
- 2020
-
Ingår i: Proceedings of the 31st Symposium on Space Terahertz Technology, ISSTT 2020. ; , s. 118-
-
Konferensbidrag (refereegranskat)abstract
- We report status and current results of the preliminary reliability study on 300 GHz InP heterostructure barrier varactor diode multipliers and 1200 GHz GaAs Schottky diode mixers. Both types of diodes are monolithically integrated with circuits and were processed on 3" InP and GaAs wafers respectively using established III-V processing. We will present results on thermal step-stress tests up to 300oC, indicating the operational temperature limitations of the devices. Also, the analysis of the accelerated lifetime testing (1000h) will be discussed.
|
|
| 9. |
- Drakinskiy, Vladimir, 1977, et al.
(författare)
-
Status and Progress of Schottky Technology Development for SWI and ISMAR
- 2015
-
Ingår i: 26th International Symposium on Space Terahertz Technology, ISSTT 2015; Cambridge; United States; 16 March 2015 through 18 March 2015. ; , s. P-6
-
Konferensbidrag (refereegranskat)abstract
- We present the progress of the technological development of a full e-beam based monolithically integrated Schottky diode process applicable for sub-millimetre wave multipliers and mixers. The process has been employed in a number of demonstrators showing state-of-the-art performance.
|
|
| 10. |
- Drakinskiy, Vladimir, 1977, et al.
(författare)
-
Terahertz GaAs Schottky diode mixer and multiplier MIC’s based on e-beam technology
- 2013
-
Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467361316
-
Konferensbidrag (refereegranskat)abstract
- We present the progress of the technological development of a full e-beam based monolithically integrated Schottky diode process applicable for sub-millimetre wave multipliers and mixers. Evaluation of the process has been done in a number of demonstrators showing state-of-the-art performance, including various multiplier circuits up to 200 GHz with a measured flange efficiency of above 35%, as well as heterodyne receiver front-end modules operating at 340 GHz and 557 GHz with a measured receiver DSB noise temperature of below 700 K and 1300 K respectively.
|
|
