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- Bengtsson, Stefan, 1961, et al.
(author)
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Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials
- 1999
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In: conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium.. ; , s. 133-
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Conference paper (peer-reviewed)abstract
- Material integration for the formation of advanced silicon-on-insulator materials by wafer bonding and etch-back is discussed. Wafer bonding allows the combining of materials that it is not possible to grow on top of each other by any other technique. In our experiments, polycrystalline diamond, aluminum nitride or aluminum oxide films with thickness of 0.1-5 μm were deposited on silicon wafers. Bonding experiments were made with these films to bare silicon wafers with the goal of forming silicon-on-insulator structures with buried films of polycrystalline diamond, aluminum nitride or aluminum oxide. These silicon-on-insulator structures are intended to address self-heating effects in conventional silicon-on-insulator materials with buried layers of silicon dioxide. The surfaces of the deposited diamond films were, by order of magnitude, too rough to allow direct bonding to a silicon wafer. In contrast the deposited aluminum nitride and aluminum oxide films did allow direct bonding to silicon. Bonding of the diamond surface to silicon was instead made through a deposited and polished layer of polycrystalline silicon on top of the diamond. In the case of the aluminum nitride electrostatic bonding was also demonstrated. Further, the compatibility of these insulators to silicon process technology was investigated
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- Ljungberg, Karin, et al.
(author)
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Modification of silicon surfaces with H2SO4:H2O2:HF and HNO3:HF for wafer bonding applications
- 1995
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In: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications. ; , s. 163-
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Conference paper (peer-reviewed)abstract
- Two combinations of oxidizing and etching agents, H2SO4:H2O2:HF and HNO3:HF, have been used to modify silicon surfaces for wafer bonding. By tuning the HF-content of the mixtures, the chemical oxide thickness can be controlled between 0 and 10 Å. Using X-ray photoelectron spectroscopy it is found, that the chemical composition of the surfaces can also be controlled. Terminating species, which can be obtained by the described procedures, are OH, F, and H. Both the described cleaning procedures permit hydrophilic bonding, giving a high room temperature bond strength, with a minimum of interfacial oxide. Different bonded combinations of terminated surfaces were investigated, and it was found that bonding a mainly F-terminated, or a mainly OH-terminated, surface to an H-terminated surface, does not yield any higher bond strength than bonding two H-terminated surfaces
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- Soderbarg, Anders, et al.
(author)
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Evaluation of silicon device processes aimed for silicon-on-diamond material
- 1995
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In: 1995 IEEE International SOI Conference Proceedings. ; , s. 104-
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Conference paper (peer-reviewed)abstract
- Silicon-on-Diamond (SOD) is a candidate for the next generation of SOI materials, especially for applications requiring high heat spreading capability. Undoped diamond is a highly electrically insulating material at temperatures below 600 K. Resistivities above 1013 Ωcm (at 10 V) and breakdown fields above 107 V/cm have been reported. Diamond conducts heat about 10 times better than silicon and more than 1000 times better than silicon dioxide. In this paper, necessary process modifications for successful manufacturing of devices on SOD-materials are discussed and evaluated
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