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  • Benetti, M., et al. (author)
  • POLYSILICON MESOSCOPIC WIRES COATED BY Pd AS H(2) SENSORS
  • 2009
  • In: PROCEEDINGS OF THE 13TH ITALIAN CONFERENCE ON SENSORS AND MICROSYSTEMS. - SINGAPORE : WORLD SCIENTIFIC PUBL CO PTE LTD. ; , s. 161-165
  • Conference paper (peer-reviewed)abstract
    • In this work a novel monocrystalline silicon nanowires array has been investigated and presented as hydrogen sensor, designed and fabricated by employing high resolution microfabrication techniques and featuring a high surface/volume ratio. The nanowires arrays makes up the channel of a MOS system, palladium-silicon dioxide-silicon. Several devices have been fabricated by using a SOI (Silicon On Insulator) substrate, Source and Drain have been geometrically patterned by optical lithography and Boron p-doped. Electron Beam Litography (EBL) defined the MOS channel made up of a nanowires array of different length and width in different transistors. The pads of Source and Drain have been manufactured with an aluminium film deposition. The Gate has been fabricated with a grown silicon oxide layer (17.4 nm) and Palladium has been used as gate contact. Polarizing and exposing the device to H(2)/N(2) cycles at different concentrations some preliminary measurements have been successfully conducted.
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