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- Thomas, HS, et al.
(författare)
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- 2019
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swepub:Mat__t
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| 3. |
- Drake, TM, et al.
(författare)
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Surgical site infection after gastrointestinal surgery in children: an international, multicentre, prospective cohort study
- 2020
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Ingår i: BMJ global health. - : BMJ. - 2059-7908. ; 5:12
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Tidskriftsartikel (refereegranskat)abstract
- Surgical site infection (SSI) is one of the most common healthcare-associated infections (HAIs). However, there is a lack of data available about SSI in children worldwide, especially from low-income and middle-income countries. This study aimed to estimate the incidence of SSI in children and associations between SSI and morbidity across human development settings.MethodsA multicentre, international, prospective, validated cohort study of children aged under 16 years undergoing clean-contaminated, contaminated or dirty gastrointestinal surgery. Any hospital in the world providing paediatric surgery was eligible to contribute data between January and July 2016. The primary outcome was the incidence of SSI by 30 days. Relationships between explanatory variables and SSI were examined using multilevel logistic regression. Countries were stratified into high development, middle development and low development groups using the United Nations Human Development Index (HDI).ResultsOf 1159 children across 181 hospitals in 51 countries, 523 (45·1%) children were from high HDI, 397 (34·2%) from middle HDI and 239 (20·6%) from low HDI countries. The 30-day SSI rate was 6.3% (33/523) in high HDI, 12·8% (51/397) in middle HDI and 24·7% (59/239) in low HDI countries. SSI was associated with higher incidence of 30-day mortality, intervention, organ-space infection and other HAIs, with the highest rates seen in low HDI countries. Median length of stay in patients who had an SSI was longer (7.0 days), compared with 3.0 days in patients who did not have an SSI. Use of laparoscopy was associated with significantly lower SSI rates, even after accounting for HDI.ConclusionThe odds of SSI in children is nearly four times greater in low HDI compared with high HDI countries. Policies to reduce SSI should be prioritised as part of the wider global agenda.
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| 6. |
- Hultquist, Gunnar, et al.
(författare)
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Effects of O-2 dissociation on a porous platinum coating in the thermal oxidation of GaAs
- 2006
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 153:2, s. G182-G186
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Tidskriftsartikel (refereegranskat)abstract
- A 20-30-nm-thick porous Pt layer has been sputter-coated on a portion of a GaAs sample and subsequently the sample was oxidized at 500 degrees C in O-16(2) followed by O-18-enriched O-2. The oxide formed was characterized by Auger electron spectroscopy, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy, all with a lateral resolution of about 100 mu m. Away from the Pt area, a mm-ranged gradually decreasing degree of As oxidation was observed in the outermost oxide layer. In the Pt area, Ga was preferentially oxidized at the oxide/substrate interface producing a five to seven times thicker oxide than in an area without the influence of Pt. A strongly enhanced dissociation rate of O-2 on Pt particles and a subsequent O spillover to adjacent oxide explain the experimental observations. The mm-ranged spillover is believed to take place via fast lateral surface diffusion and results in the observed variation of oxidized As at the gas/oxide interface. In the Pt area, a high concentration gradient of dissociated oxygen across the oxide layer supplies a high flux of dissociated oxygen to the GaAs substrate where Ga is preferentially oxidized. The results clearly demonstrate that both a surface reaction and solid-state diffusion influence the oxidation rate. A localized high effective oxygen (O) activity that spills over to a nearby oxide area is believed to be a general phenomenon that is operating in oxides where a dissociating element such as Pt is present at O-2/oxide interfaces.
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| 7. |
- Hultquist, Gunnar, et al.
(författare)
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Influence of deuterium and platinum on the thermal oxidation of GaAs
- 2003
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 150:10, s. G617-G623
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Tidskriftsartikel (refereegranskat)abstract
- The thermal oxidation of GaAs at 500 degreesC in O-18 labeled O-2 has been studied with gas phase analysis, Auger electron spectroscopy, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy. The influence of a few hundred atomic parts per million of deuterium in the GaAs substrate and of surface platinum have been evaluated with respect to oxide growth mechanisms and the degree of As buildup. Deuterium increased the transport from the substrate interface of both Ga and As toward the gas interface thereby lowering the degree of preferential Ga oxidation and As buildup at the substrate interface. Platinum, on the other hand, catalyzed the dissociation of the oxygen molecule at the gas interface and thereby facilitated an increased transport of oxygen toward the substrate interface. That results in an increased overall oxidation rate with a high degree of preferential Ga oxidation and concomitant As buildup. When the oxygen pressure was increased from 20 to 720 mbar, a lowered degree of As buildup was observed due to the lower degree of preferential Ga oxidation.
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