| 1. |
- Altavilla, G., et al.
(author)
-
Type Ia SNe Along Redshift : The \mathcal {R}(Si II) Ratio and the Expansion Velocities in Intermediate-z Supernovae
- 2009
-
In: Astrophysical Journal. - 0004-637X .- 1538-4357. ; 695, s. 135-148
-
Journal article (peer-reviewed)abstract
- We present a study of intermediate-z Type Ia supernovae (SNe Ia) using empirical physical diagrams which permit the investigation of those SNe explosions. This information can be very useful to reduce systematic uncertainties of the Hubble diagram of SNe Ia up to high z. The study of the expansion velocities and the measurement of the ratio \mathcal {R}(Si II) allow subtyping of SNe Ia as done in nearby samples. The evolution of this ratio as seen in the diagram \mathcal {R}(Si II)-(t) together with \mathcal {R}(Si II)max versus (B - V)0 indicates consistency of the properties at intermediate-z compared with the nearby SNe Ia. At intermediate-z, expansion velocities of Ca II and Si II are found similar to those of the nearby sample. This is found in a sample of six SNe Ia in the range 0.033 <=z<= 0.329 discovered within the International Time Programme of SNe Ia for Cosmology and Physics in the spring run of 2002.7The program run under Omega and Lambda from Supernovae and the Physics of Supernova Explosions within the International Time Programme at the telescopes of the European Northern Observatory (ENO) at La Palma (Canary Islands, Spain). Two SNe Ia at intermediate-z were of the cool FAINT type, one being an SN1986G-like object highly reddened. The \mathcal {R}(Si II) ratio as well as subclassification of the SNe Ia beyond templates help to place SNe Ia in their sequence of brightness and to distinguish between reddened and intrinsically red supernovae. This test can be done with very high z SNe Ia and it will help to reduce systematic uncertainties due to extinction by dust. It should allow to map the high-z sample into the nearby one.
|
|
| 2. |
|
|
| 3. |
- Armakavicius, Nerijus, et al.
(author)
-
Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies
- 2017
-
In: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 421, s. 357-360
-
Journal article (peer-reviewed)abstract
- Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high-temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 1012 cmￜￜￜ2 range and a free hole mobility parameter as high as 1550 cm2/Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm2/Vs and an order of magnitude higher free electron density in the low 1013 cmￜￜￜ2 range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG.
|
|
| 4. |
- Armakavicius, Nerijus, 1989-, et al.
(author)
-
Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect
- 2024
-
In: APL Materials. - : AIP Publishing. - 2166-532X. ; 12:2
-
Journal article (peer-reviewed)abstract
- Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be experimentally determined at high temperatures relevant to device operation. In this work, we obtain the electron effective mass parameters in a Si-doped GaN bulk substrate and epitaxial layers from terahertz (THz) and mid-infrared (MIR) optical Hall effect (OHE) measurements in the temperature range of 38-340 K. The OHE data are analyzed using the well-accepted Drude model to account for the free charge carrier contributions. A strong temperature dependence of the electron effective mass parameter in both bulk and epitaxial GaN with values ranging from (0.18 +/- 0.02) m(0) to (0.34 +/- 0.01) m(0) at a low temperature (38 K) and room temperature, respectively, is obtained from the THz OHE analysis. The observed effective mass enhancement with temperature is evaluated and discussed in view of conduction band nonparabolicity, polaron effect, strain, and deviations from the classical Drude behavior. On the other hand, the electron effective mass parameter determined by MIR OHE is found to be temperature independent with a value of (0.200 +/- 0.002) m(0). A possible explanation for the different findings from THz OHE and MIR OHE is proposed. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)
|
|
| 5. |
- Armakavicius, Nerijus, et al.
(author)
-
Electron effective mass in In0.33Ga0.67N determined by mid-infrared optical Hall effect
- 2018
-
In: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 112:8
-
Journal article (peer-reviewed)abstract
- Mid-infrared optical Hall effect measurements are used to determine the free charge carrier parameters of an unintentionally doped wurtzite-structure c-plane oriented In0.33Ga0.67N epitaxial layer. Room temperature electron effective mass parameters of m(perpendicular to)* = (0.205 +/- 0.013) m(0) and m(parallel to)* = (0.204 +/- 0.016) m(0) for polarization perpendicular and parallel to the c-axis, respectively, were determined. The free electron concentration was obtained as (1.7 +/- 0.2) x 10(19) cm(-3). Within our uncertainty limits, we detect no anisotropy for the electron effective mass parameter and we estimate the upper limit of the possible effective mass anisotropy as 7%. We discuss the influence of conduction band nonparabolicity on the electron effective mass parameter as a function of In content. The effective mass parameter is consistent with a linear interpolation scheme between the conduction band mass parameters in GaN and InN when the strong nonparabolicity in InN is included. The In0.33Ga0.67N electron mobility parameter was found to be anisotropic, supporting previous experimental findings for wurtzite-structure GaN, InN, and AlxGa1-xN epitaxial layers with c-plane growth orientation. Published by AIP Publishing.
|
|
| 6. |
- Armakavicius, Nerijus, et al.
(author)
-
Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
- 2024
-
In: Materials. - : MDPI. - 1996-1944. ; 17:13
-
Journal article (peer-reviewed)abstract
- Group-III nitrides have transformed solid-state lighting and are strategically positioned to revolutionize high-power and high-frequency electronics. To drive this development forward, a deep understanding of fundamental material properties, such as charge carrier behavior, is essential and can also unveil new and unforeseen applications. This underscores the necessity for novel characterization tools to study group-III nitride materials and devices. The optical Hall effect (OHE) emerges as a contactless method for exploring the transport and electronic properties of semiconductor materials, simultaneously offering insights into their dielectric function. This non-destructive technique employs spectroscopic ellipsometry at long wavelengths in the presence of a magnetic field and provides quantitative information on the charge carrier density, sign, mobility, and effective mass of individual layers in multilayer structures and bulk materials. In this paper, we explore the use of terahertz (THz) OHE to study the charge carrier properties in group-III nitride heterostructures and bulk material. Examples include graded AlGaN channel high-electron-mobility transistor (HEMT) structures for high-linearity devices, highlighting the different grading profiles and their impact on the two-dimensional electron gas (2DEG) properties. Next, we demonstrate the sensitivity of the THz OHE to distinguish the 2DEG anisotropic mobility parameters in N-polar GaN/AlGaN HEMTs and show that this anisotropy is induced by the step-like surface morphology. Finally, we present the temperature-dependent results on the charge carrier properties of 2DEG and bulk electrons in GaN with a focus on the effective mass parameter and review the effective mass parameters reported in the literature. These studies showcase the capabilities of the THz OHE for advancing the understanding and development of group-III materials and devices.
|
|
| 7. |
- Armakavicius, Nerijus, et al.
(author)
-
Resolving mobility anisotropy in quasi-free-standing epitaxial graphene by terahertz optical Hall effect
- 2021
-
In: Carbon. - : Elsevier BV. - 0008-6223 .- 1873-3891. ; 172, s. 248-259
-
Journal article (peer-reviewed)abstract
- In this work, we demonstrate the application of terahertz-optical Hall effect (THz-OHE) to determine directionally dependent free charge carrier properties of ambient-doped monolayer and quasi-free-standing-bilayer epitaxial graphene on 4H–SiC(0001). Directionally independent free hole mobility parameters are found for the monolayer graphene. In contrast, anisotropic hole mobility parameters with a lower mobility in direction perpendicular to the SiC surface steps and higher along the steps in quasi-free-standing-bilayer graphene are determined for the first time. A combination of THz-OHE, nanoscale microscopy and optical spectroscopy techniques are used to investigate the origin of the anisotropy. Different defect densities and different number of graphene layers on the step edges and terraces are ruled out as possible causes. Scattering mechanisms related to doping variations at the step edges and terraces as a result of different interaction with the substrate and environment are discussed and also excluded. It is suggested that the step edges introduce intrinsic scattering in quasi-free-standing-bilayer graphene, that is manifested as a result of the higher ratio between mean free path and average terrace width parameters. The suggested scenario allows to reconcile existing differences in the literature regarding the anisotropic electrical transport in epitaxial graphene.
|
|
| 8. |
- Bittrich, Eva, et al.
(author)
-
Morphology of Thin Films of Aromatic Ellagic Acid and Its Hydrogen Bonding Interactions
- 2020
-
In: The Journal of Physical Chemistry C. - : AMER CHEMICAL SOC. - 1932-7447 .- 1932-7455. ; 124:30, s. 16381-16390
-
Journal article (peer-reviewed)abstract
- Ellagic acid (EA), an antioxidant from fruits or other plants, has recently evoked interest in the field of organic electronics because of its weak electron donor properties. In this work, the preparation of uniaxial pi-stacked EA films by thermal evaporation on different surfaces is reported for the first time. The (102) lattice plane of the pi-electron system was confirmed as the contact plane for one monolayer equivalent on Ag(111) by low-electron energy diffraction. X-ray and atomic force microscopy measurements revealed nanocrystalline grains with an average inplane size of 50 nm and considerably smaller average out-of-plane crystallite sizes (16-25 nm) in films of 16-75 nm thickness. The influence of different substrates was minor compared to the effect of the film thickness. An increase in the in-plane density of grains at larger film thicknesses was deduced from the trend in their uniaxial optical properties. Weak and strong intermolecular H-bonding interactions were identified in the EA crystal lattice, while a surplus of weak H-bonding was observed for the nanocrystallites in thin films, as compared to bulk EA. Finally, EA was coevaporated with the semiconducting thiophene molecule DCV4T-Et-2 to demonstrate principle interactions with a guest molecule by H-bonding analysis. Our results illustrate the feasibility of applying EA films as alignment layers for templating other semiconducting organic films used in organic electronic devices.
|
|
| 9. |
- Boldt, Luis N., et al.
(author)
-
Near-Infrared K Corrections of Type Ia Supernovae and their Errors
- 2014
-
In: Publications of the Astronomical Society of the Pacific. - : IOP Publishing. - 0004-6280 .- 1538-3873. ; 126:938, s. 324-337
-
Journal article (peer-reviewed)abstract
- In this paper we use near-infrared (NIR) spectral observations of Type Ia supernovae (SNe Ia) to study the uncertainties inherent in NIR K corrections. To do so, 75 previously published NIR spectra of 33 SNe Ia are employed to determine K-correction uncertainties in the YJHK(s) passbands as a function of temporal phase and redshift. The resultant K corrections are then fed into an interpolation algorithm that provides mean K corrections as a function of temporal phase and robust estimates of the associated errors. These uncertainties are both statistical and intrinsic-i.e., due to the diversity of spectral features from object to object and must be included in the overall error budget of cosmological parameters constrained through the use of NIR observations of SNe Ia. Intrinsic variations are likely the dominant source of error for all four passbands at maximum light. Given the present data, the total Y-band K-correction uncertainties at maximum are smallest, amounting to +/- 0.04 mag at a redshift of z = 0.08. The J-band K-term errors are also reasonably small (+/- 0.06 mag), but intrinsic variations of spectral features and noise introduced by telluric corrections in the H-band currently limit its total K-correction errors at maximum to +/- 0.10 mag at z = 0.08. Finally, uncertainties in the K-s-band K terms at maximum amount to +/- 0.07 mag at this same redshift. These results are largely constrained by the small number of published NIR spectra of SNe Ia, which do not yet allow spectral templates to be constructed as a function of the light curve decline rate.
|
|
| 10. |
- Bouhafs, Chamseddine, et al.
(author)
-
Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)
- 2016
-
In: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 109:20
-
Journal article (peer-reviewed)abstract
- We show experimentally that few layer graphene (FLG) grown on the carbon terminated surface (C-face) of 3C-SiC(111) is composed of decoupled graphene sheets. Landau level spectroscopy on FLG graphene is performed using the infrared optical Hall effect. We find that Landau level transitions in the FLG exhibit polarization preserving selection rules and the transition energies obey a square-root dependence on the magnetic field strength. These results show that FLG on C-face 3C-SiC(111) behave effectively as a single layer graphene with linearly dispersing bands (Dirac cones) at the graphene K point. We estimate from the Landau level spectroscopy an upper limit of the Fermi energy of about 60 meV in the FLG, which corresponds to a carrier density below 2.5 x 10(11) cm(-2). Low-energy electron diffraction mu-LEED) reveals the presence of azimuthally rotated graphene domains with a typical size of amp;lt;= 200 nm.mu-LEED mapping suggests that the azimuth rotation occurs between adjacent domains within the same sheet rather than vertically in the stack. Published by AIP Publishing.
|
|
