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- Yen, ST, et al.
(author)
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Evidence for capture of holes into resonant states in boron-doped silicon
- 2004
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In: Applied Physics Reviews. - : AIP Publishing. - 1931-9401. ; 96:9, s. 4970-4975
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Journal article (peer-reviewed)abstract
- The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p(3/2) absorptions, we find that the hole population in the ground state decreases continuously with the sequential electric pulses, as a result of the breakdown delay and hole accumulation in long-lived excited states. The measured time-varying spectra of the p(1/2) series have been analyzed and attributed to a significant variation of the hole population in the resonant states. We have also observed a new absorption line at 676 cm(-1) which is probably caused by the electric-field induced mixing of the resonant states. (C) 2004 American Institute of Physics.
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