| 1. |
|
|
| 2. |
|
|
| 3. |
- Choubina, Tatiana, 1950-, et al.
(author)
-
The slow light in GaN
- 2008
-
In: ICPS2008,2008. ; , s. 647-
-
Conference paper (peer-reviewed)
|
|
| 4. |
- Shubina, Tatiana, et al.
(author)
-
Resonant light delay in GaN with ballistic and diffusive propagation
- 2008
-
In: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 100:8
-
Journal article (peer-reviewed)abstract
- We report on a strong delay in light propagation through bulk GaN, detected by time-of-flight spectroscopy. The delay increases resonantly as the photon energy approaches the energy of a neutral-donor bound exciton (BX), resulting in a velocity of light as low as 2100 km/s. In the close vicinity of the BX resonance, the transmitted light contains both ballistic and diffusive components. This phenomenon is quantitatively explained in terms of optical dispersion in a medium where resonant light scattering by the BX resonance takes place in addition to the polariton propagation.
|
|
| 5. |
- Choubina, Tatiana, 1950-, et al.
(author)
-
Slow light in GaN
- 2008
-
In: 16th Int. Symp. ¿Nanostructures: Physics and Technology,2008. ; , s. 257-
-
Conference paper (peer-reviewed)
|
|
| 6. |
- Choubina, Tatiana, 1950-, et al.
(author)
-
Light diffusion in GaN epilayers
- 2007
-
In: 3rd International Conference on Spontaneous Coherence in Excitonic System,2007.
-
Conference paper (other academic/artistic)
|
|
| 7. |
- Monemar, Bo, 1942-, et al.
(author)
-
Optical signatures of dopants in GaN
- 2006
-
In: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 9:1-3, s. 168-174
-
Journal article (peer-reviewed)abstract
- The characteristic optical spectra for shallow donors and acceptors in GaN are discussed. The most accurate photoluminescence (PL) data are obtained from samples grown on freestanding GaN substrates, where strain shifts are absent and a low spectroscopic line width is obtained. Recent PL data for excitons bound to the O and Si donors are discussed in some detail, giving accurate values for the binding energies and excited bound donor states. The Mg-acceptor is the most important one for p-doping, but the related optical spectra are controversial. We show that there are two acceptors present in Mg-doped GaN, with two different acceptor bound exciton peaks, and also two corresponding lower energy donor-acceptor pair spectra. We give tentative evidence for their interpretation. © 2006 Elsevier Ltd. All rights reserved.
|
|
| 8. |
|
|
| 9. |
- Monemar, Bo, et al.
(author)
-
Recombination dynamics of free and bound excitons in bulk GaN
- 2008
-
In: Superlattices and Microstructures. - : Elsevier BV. - 0749-6036 .- 1096-3677. ; 43:5-6, s. 610-614
-
Journal article (peer-reviewed)abstract
- We report new data on the transient photoluminescence behaviour of free and donor bound excitons in high quality bulk GaN material grown by HVPE. With 266 nm photoexcitation the no-phonon free exciton has a short decay time, about 100 ps at 2 K, assigned to nonradiative surface recombination. The LO replicas of the free exciton have a much longer decay at 2 K, about 1.4 ns, believed to be a lower bound for the bulk radiative lifetimes of the free excitons at 2 K. The donor bound exciton no-phonon lines exhibit a rather short (about 300 ps) nonexponential decay at 2 K, which appears to be dominated by a scattering process. The corresponding LO replicas and the two-electron transitions have a much longer decay. From the latter, the lower bound of the radiative lifetime of the O- and Si-bound excitons are 1800 ps and 1100 ps, respectively. © 2007 Elsevier Ltd. All rights reserved.
|
|
| 10. |
- Monemar, Bo, 1942-, et al.
(author)
-
Recombination of free and bound excitons in GaN
- 2008
-
In: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 245:9, s. 1723-1740
-
Journal article (peer-reviewed)abstract
- We report on recent optical investigations of free and bound exciton properties in bulk GaN. In order to obtain reliable data it is important to use low defect density samples of low doping. We have used thick GaN layers (of the order of 1 mm) grown by halide vapour phase epitaxy (HVPE) with a residual doping down to <1016 cm-3 in this work. With such samples all polarisation geometries could also easily be exploited. The influence of the surface states on the photoluminescence (PL) experiments is analysed, it is concluded that surface recombination plays an important role for the free exciton (FE) recombination. The electronic structure of the FEs is discussed in detail, including the influence of spin-exchange and polariton effects, and compared with polarised PL spectra at 2 K. The detailed structure of excited states from the PL spectra is discussed, but further data are needed to fully explain all the peaks observed. The polarized FE spectra at room temperature allow a determination of the bandgap as 3.437 eV at 290 K, assuming an exciton binding energy of 25 meV. The PL transient of the A FE is very short (about 100 ps) for the no-phonon (NP) line interpreted as dominated by nonradiative surface recombination. The longitudinal-optical (LO) phonon replicas of the A FE exhibit a longer decay of about 1.4 ns at 2 K, suggested to represent the bulk lifetime of the FE. The corresponding decay time at 290 K is 9 ns in our samples, a value that might be affected by nonradiative recombination. The Si and O donor bound exciton (DBE) spectra with sharp NP lines at 3.4723 eV and 3.4714 eV respectively, are well resolved together with the so-called two-electron transitions (TETs) and several optical phonon replicas. The electronic structure of the DBE states including excited rotational states is discussed and compared with experiment. The well-resolved TET lines allow an accurate determination of the ground state binding energy of the Si donor as 30.4 meV and 33.2 meV for the O donor. The PL transients of the DBEs reveal a non-exponential decay for the NP lines. The DBE NP transient lineshape is assumed to be influenced by optical dispersion and scattering in the vicinity of exciton resonances, as well as by surface effects. The DBE decay time can most properly be deduced from the PL decay of the respective TETs and LO replicas, leading to values in the range of 1.1-1.8 ns. These values differ significantly from previous theoretical predictions, where values about two orders of magnitude shorter were obtained. A tentative discussion of the main observed features of acceptor bound excitons (ABEs), which are much less studied in GaN, is given. A decay time of about 0.9 ns for the shallowest 3.466 eV ABE is estimated, i.e. shorter than that for the shallow donor BEs. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
|
|
