| 1. |
- Carlsson, Erik F., 1968, et al.
(author)
-
Arrangement and method relating to filtering of signals
- 2000
-
Patent (other academic/artistic)abstract
- A superconducting notch or band reject filter arrangement includes a superconducting dielectric resonator and a waveguide arrangement including a microstrip line to which the resonator is connected. The resonator is a parallel-plate resonator with a chip of a non-linear dielectric material device on which superconductors are arranged and the waveguide arrangement includes a contact device or a coupling device, the resonator being connected to the contact device of the waveguide arrangement in such a way that electric contact is provided, and the filter arrangement is frequency tuneable. Through the arrangement, the insertion losses are low
|
|
| 2. |
- Carlsson, Erik F., 1968, et al.
(author)
-
Electric field dependent microwave losses in KTaO3 single crystal with YBa2CU3O7-x electrodes
- 1999
-
In: Ferroelectrics, Letters Section. - : Informa UK Limited. - 0731-5171 .- 1563-5228. ; 25:5-6, s. 141-152
-
Journal article (peer-reviewed)abstract
- We have measured the voltage dependence of the resonant frequency and the microwave losses for parallel-plate resonators based on single crystals KTaO3, with YBa2Cu3O7-x electrodes. The losses increase and the dielectric constant decrease monotonically with applied voltage. Both the dielectric constant and the losses show a hysteretic effect in the voltage dependence. The hysteretic effects may be explained by electric field assisted charge trapping both in the KTaO3, crystal and at the KTaO3/YBa2Cu3O7-x interfaces
|
|
| 3. |
- Carlsson, Erik F., 1968, et al.
(author)
-
Parallel plate microwave devices having tapered current interrupting slots
- 2002
-
Patent (other academic/artistic)abstract
- A microwave device includes a number of parallel-plate resonators that include at least one dielectric substrate and first and second plates arranged on either side of the substrate. At least one of the plates of each of a number of the parallel-plate resonators includes a current interrupting device such that the current lines of at least one undesired mode are interrupted at their maxima to suppress the undesired mode. There is also described a method of interrupting undesired modes in a microwave device having a number of parallel-plate resonators
|
|
| 4. |
- Claeson, Tord, 1938, et al.
(author)
-
High speed components based on high-Tc superconducting grain boundary junctions
- 1996
-
In: 1996 International Workshop on Superconductivity. `High Temperature Superconducting Electronics: Fundamentals and Applications. Program and Extended Abstracts. ; , s. 3-6
-
Conference paper (other academic/artistic)abstract
- Artificial grain boundary junctions of both bi-crystal and step edge configurations have been characterized at high frequency using Fiske type resonances as well as flux flow induced steps in the current-voltage curve. A dielectric behavior of the barrier with sufficiently low microwave losses to allow resonances is indicated. Deduced values of the barrier thickness, the penetration depth, and surface microwave losses agree with those from other measurements. Long grain boundary junctions, as well as parallel arrays of shorter junctions, have been used in Josephson Flux Flow Transistors (J-FFT). Asymmetrically coupled devices give considerable current gain at low temperature. Grain boundary junctions have also been employed in simple Rapid Single Flux Quantum (RSFQ) circuits to demonstrate functions like flip flop, voltage divider and voltage doubler. A single superconducting layer technology implies small inductances formed as narrow slits in the deposited film. A tri-layer technology is superior but puts demands on insulation and strip cross-overs. Presently available high-Tc junctions are not sufficiently reproducible to allow large scale integrated circuits. Another limitation is the limited performance (for example given by the junction IcRn product) of present junctions at 77 K
|
|
| 5. |
- Gevorgian, Spartak, 1948, et al.
(author)
-
Ferroelectric devices and method relating thereto
- 2007
-
Patent (other academic/artistic)abstract
- The present invention relates to an electrically controllable/tunable microwave device comprising a ferroelectric substrate with a variable dielectric permittivity and conducting electrodes, arranged on said substrate, and the capacitance of which depends on applied voltage C/V), the microwave device comprises at least two sections or parts of the substrate/electrodes for each of which different electrical field strengths are generated upon voltage application. Said generated electrical field strengths are controlled by means of the design of the device and/or the voltage application such that the slope (dC(dV) of the voltage dependence of the capacitance (C(V) of the microwave device can be controlled
|
|
| 6. |
- Gevorgian, Spartak, 1948, et al.
(author)
-
Ferroelectric devices and method relating thereto.
- 2006
-
Patent (other academic/artistic)abstract
- The present invention relates to an electrically controllable/tunable microwave device comprising a ferroelectric substrate with a variable dielectric permittivity and conducting electrodes, arranged on said substrate, and the capacitance of which depends on applied voltage C/V), the microwave device comprises at least two sections or parts of the substrate/electrodes for each of which different electrical field strengths are generated upon voltage application. Said generated electrical field strengths are controlled by means of the design of the device and/or the voltage application such that the slope (dC(dV) of the voltage dependence of the capacitance (C(V) of the microwave device can be controlled
|
|
| 7. |
- Gevorgian, Spartak, 1948, et al.
(author)
-
Ferroelectric devices and method relating thereto.
- 2004
-
Other publication (other academic/artistic)abstract
- The present invention relates to an electrically controllable/tunable microwave device (10) comprising a ferroelectric substrate (101) with a variable dielectric permittivity and conducting electrodes (102, 103A-C), arranged on said substrate, and the capacitance of which depends on applied voltage C(V), the microwave device comprises at least two sections or parts of the substrate/electrodes for each of which different electrical field strengths are generated upon voltage application. Said generated electrical field strengths are controlled by means of the design of the device and/or the voltage application such that the slope (dC(dV) of the voltage dependence of the capacitance (C(V)) of the microwave device can be controlled
|
|
| 8. |
|
|
| 9. |
- Gevorgian, Spartak, 1948, et al.
(author)
-
Superconducting arrangement with non-orthogonal degenerate resonator modes
- 2000
-
Patent (other academic/artistic)abstract
- Superconducting multiplexing/demultiplexing arrangements include a number of signal input devices and a number of signal output devices. A number of resonators provides a number of filters. Each filter represents a channel. The resonator(s) operate(s) devices at lest in dual mode, and tuning devices are provided so that at least some of the resonators is/are tuneable. A method is provided of multiplexing signals incoming to a multiplexing arrangement with a number of resonators, each of the resonators having a number of input ports which are so arranged that a number of mulitpole filters are created. Input signals having different frequencies are supplied to the different input ports of the resonators, each of which is operated in three modes. Coupling devices are arranged which at least comprise the angle between the input ports and a symmetry plane. The angles are non-perpendicularly azimuth. Tuning devices are further provided for tuning the resonant frequencies of the degenerate modes, and the coupling angles and tuning devices are controlled so that for a number of input signals, only input signal is transmitted to the output devices.
|
|
| 10. |
- Gevorgian, Spartak, 1948, et al.
(author)
-
Tailoring the temperature coefficient of capacitance in ferroelectric varactors
- 2001
-
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:12, s. 1861 - 1863
-
Journal article (peer-reviewed)abstract
- Two BaxSr1-xO3, films with different contents of Ba (Ba0.25Sr0.75O3 and Ba0.75Sr0.5O3), separated by a MgO film, are used to fabricate planar varactors with low temperature coefficient of capacitance (TCC), high tunability and low losses. The TCC of the varactors are small in the temperature interval between the dielectric permittivity peaks of the Ba0.25Sr0.75O3 and Ba0.75Sr0.5O3 films
|
|
