| 1. |
- Thomas, HS, et al.
(author)
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- 2019
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swepub:Mat__t
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| 2. |
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| 3. |
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| 4. |
- Son, H., et al.
(author)
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Quantitative investigation of the magnetic anisotropy in GaMnAs film by using Hall measurement
- 2008
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 103:7
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Journal article (peer-reviewed)abstract
- We have performed a systematic Hall measurement on the GaMnAs ferromagnetic films. The angular dependences of the Hall effects were obtained by changing the magnetic field angle in two different crystal planes [i.e., (001) and (110)]. The in-plane and out-of-plane anisotropy fields were obtained by analyzing the angular dependence of planar Hall resistance and anomalous Hall resistance based on the magnetic free energy model. While the cubic anisotropy fields both for in-plane and out-of-plane showed strong temperature dependence, the uniaxial anisotropy fields were insensitive to the temperature. © 2008 American Institute of Physics.
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| 5. |
- Son, H., et al.
(author)
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Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film
- 2010
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 96:9
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Journal article (peer-reviewed)abstract
- The properties of magnetic anisotropy of GaMnAs films along the growth direction were studied by Hall effect measurements. The magnetic anisotropy fields were obtained by analyzing the angular dependence of the planar Hall resistance and the anomalous Hall resistance for in-plane and out-of plane components of the Hall signal, respectively. The magnetic anisotropy fields obtained by this process were used to construct a three-dimensional magnetic free energy diagram, which clearly shows that the out-of-plane characteristics of magnetic anisotropy become more pronounced as we approach the bottom part of the film.
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| 6. |
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| 7. |
- Yea, S.-y., et al.
(author)
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Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect
- 2008
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In: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 147:7-8, s. 309-312
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Journal article (peer-reviewed)abstract
- We have investigated the effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs film using the planar Hall effect (PHE). Different thicknesses were obtained on a single GaMnAs specimen by using different etching times on selected areas, and the PHE was then measured using the Hall bar configurations patterned on the area. Cubic and uniaxial anisotropy fields were obtained for the films by fitting the angular dependence of the PHE data to the Stoner-Wohlfarth model. The results exhibited a very systematic dependence on the etched thickness, demonstrating that the chemical etching process significantly affects the magnetic anisotropy of ferromagnetic GaMnAs films.
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| 8. |
- Yea, S. -Y, et al.
(author)
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Thickness dependence of magnetic domain pinning energy in GaMnAs ferromagnetic semiconductor films
- 2008
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 103:7
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Journal article (peer-reviewed)abstract
- Magnetotransport measurements were performed on GaMnAs films with four different thicknesses. The process of magnetization reorientation was investigated by planar Hall effect, from which the magnetization switching fields were determined for each film thickness. Domain pinning energies were then obtained for the films by fitting the angular dependence of the switching fields using the model developed by Cowburn [J. Appl. Phys. 78, 7210 (1995)]. The results show a systematic increase of domain pinning energies as the thickness of the film decreases. Such dependence of domain pinning can be understood in terms of the carrier dependence of magnetic anisotropy in GaMnAs films on the concentration of carriers. © 2008 American Institute of Physics.
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| 9. |
- Yoo, T., et al.
(author)
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Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices
- 2009
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 95:20
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Journal article (peer-reviewed)abstract
- We report the realization of four distinct magnetic states using single layers of Fe at room temperature. When the Fe film was grown on the vicinal surface of GaAs, the fourfold-symmetric magnetization along crystallographic direction give rise to four distinct Hall resistance values due to the different combination of planar and anomalous Hall effects for the given direction. Each Hall resistance state can be written reproducibly by the sequence of field pulses and was remained constant at the written state for more than 2 h, which brings the idea of a quaternary memory device much closer to practical implementation. © 2009 American Institute of Physics.
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