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1.	Alavian Ghavanini, Farzan, 1978, et al. (author) CMOS considerations in nanoelectromechanical carbon nanotube-based switches 2008 In: Nanotechnology. - 1361-6528 .- 0957-4484. Journal article (peer-reviewed)abstract In this paper, we focus on critical issues directly related to the viability of carbon nanotube-based nanoelectromechanical switches, to perform their intended functionality as logic and memory elements, through assessment of typical performance parameters with reference to complementary metal-oxide-semiconductor devices. A detailed analysis of performance metrics regarding threshold voltage control, static and dynamic power dissipation, speed, and integration density is presented. Apart from packaging and reliability issues, these switches seem to be competitive in low power, particularly low-standby power, logic and memory applications.
2.	Johansson, Mikael, et al. (author) HfO2 gate dielectrics on strained-Si and strained-SiGe layers 2003 In: Semiconductor Science And Technology. ; 18:9, s. 820-826 Journal article (peer-reviewed)
3.	Yousif, Mahdi, 1963, et al. (author) CMOS considerations in nanoelectromechanical carbon nanotube-based switches 2008 In: Nanotechnology. - 1361-6528 .- 0957-4484. ; 19 (28):285204 Journal article (peer-reviewed)

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Author/Editor: Lundgren, Per, 1968 (3); Bengtsson, Stefan, 1 ... (3); Yousif, Mahdi, 1963 (3); Enoksson, Peter, 195 ... (2); Alavian Ghavanini, F ... (2); Sundqvist, J. (1); show more...; Johansson, Mikael (1); Radamson, H. H. (1); Harsta, Anders (1); show less...

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