SwePub - search: WFRF:(Yu Dengguang)

Enumeration	Reference	Cover	Find
1.	Dou, Cheng, et al. (author) Photoluminescence Evolution with Deposition Thickness of Ge Nanostructures Embedded in GaSb 2022 In: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 259:4 Journal article (peer-reviewed)abstract Herein, low-temperature and temperature-dependent photoluminescence (PL) measurements are carried out on highly tensile-strained Ge nanostructures embedded in GaSb matrix, and the effects of Ge deposition thickness are clarified. The direct-gap transition-related PL feature is successfully identified in the tensile-strained Ge nanostructures. While typical PL thermal quenching is observed for the tensile-strained Ge- and GaSb-related transitions in the samples with a Ge deposition being thinner than the critical thickness, a negative thermal quenching shows up for the GaSb interband transition in the samples with Ge deposition surpassing the critical thickness at which high-density nanoparticles form to relax the strain. A phenomenological thermal-injection model is established of electrons from the tensile-strained Ge layer to the GaSb matrix, the thermal quenching is accounted for, and a ladder-like function of the strain-relaxed Ge is clarified to favor the electron activation. The understanding of the effects of deposition thickness is helpful for the high-performance Ge-based light source for optoelectronic integration.

Dou, Cheng, et al. (author)
Photoluminescence Evolution with Deposition Thickness of Ge Nanostructures Embedded in GaSb
2022
In: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 259:4
Journal article (peer-reviewed)abstract
- Herein, low-temperature and temperature-dependent photoluminescence (PL) measurements are carried out on highly tensile-strained Ge nanostructures embedded in GaSb matrix, and the effects of Ge deposition thickness are clarified. The direct-gap transition-related PL feature is successfully identified in the tensile-strained Ge nanostructures. While typical PL thermal quenching is observed for the tensile-strained Ge- and GaSb-related transitions in the samples with a Ge deposition being thinner than the critical thickness, a negative thermal quenching shows up for the GaSb interband transition in the samples with Ge deposition surpassing the critical thickness at which high-density nanoparticles form to relax the strain. A phenomenological thermal-injection model is established of electrons from the tensile-strained Ge layer to the GaSb matrix, the thermal quenching is accounted for, and a ladder-like function of the strain-relaxed Ge is clarified to favor the electron activation. The understanding of the effects of deposition thickness is helpful for the high-performance Ge-based light source for optoelectronic integration.

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