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1.	Lee, S., et al. (author) Effect of be doping on the properties of GaMnAs ferromagnetic semiconductors 2003 In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 93:10 3, s. 8307-8309 Journal article (peer-reviewed)abstract The effect of Be doping on the properties of GaMnAs ferromagnetic semiconductors was analyzed. The samples were characterized using SQUID and magnetotransport measurements. The observed increase in the critical temperature in Ga 1-xMn xAs for the low range of x can be explained by the increase of free carrier concentrations in the system arising from Be doping.

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Author/Editor: Liu, X (1); Sasaki, Y. (1); Lee, S (1); Choi, I. S. (1); Chung, S. J. (1); Furdyna, J. K. (1); show more...; Wojtowicz, T. (1); Kang, T. W. (1); Yuldeshev, Sh.U. (1); Im, H. (1); Lim, W. -L (1); show less...

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