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  • Wernersson, Lars-Erik, et al. (author)
  • SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion
  • 2004
  • In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 40:1, s. 83-85
  • Journal article (peer-reviewed)abstract
    • A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly boron-doped p(+)-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n(+)-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si0.74Ge0.26, showing a peak current density of 0.18 kA/cm(2) and a current peak-to-valley ratio of 2.6 at room temperature.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Zhang, J. (1)
Seifert, Werner (1)
Wernersson, Lars-Eri ... (1)
Lind, Erik (1)
Seabaugh, A. (1)
Kabeer, S (1)
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Zela, V (1)
Kosel, T (1)
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University
Lund University (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Engineering and Technology (1)
Year

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