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Search: WFRF:(Zhang Zuhua)

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1.
  • Qiu, Zhijun, et al. (author)
  • Role of Si implantation in control of underlap length in Schottky-barrier source/drain MOSFETs on ultrathin body SOI
  • 2008
  • In: Proceedings of ULIS. - NEW YORK : IEEE. ; , s. 175-178, s. 175-178
  • Conference paper (peer-reviewed)abstract
    • This works demonstrates a novel approach using Si implantation prior to Pt deposition and PtSi formation to control the underlap length between the PtSi source/drain regions to the gate in Schottky-Barrier (SB-) MOSFETs. Dopant segregation at the PtSi/Si interface is used to enhance device performance. With the lon /Ioff current ratio as an indicator, optimized Si implant doses are found for both n- and p-channel SB-MOSFETs. Through an effective barrier width, the underlap length has direct implication on the leakage current.
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2.
  • Qiu, Zhijun, et al. (author)
  • Silicide as diffusion source for dopant segregation in 70-nm MOSFETs with PtSi Schottky-barrier source/drain on ultrathin-body SOI
  • 2008
  • In: ULIS 2008. - NEW YORK : IEEE. ; , s. 23-26
  • Conference paper (peer-reviewed)abstract
    • In this paper, dopant segregation (DS) method is adopted to enhance device performance of PtSi-based Schottky-barrier source/drain MOSFETs (SB-MOSFETs) fabricated on ultrathin silicon-on-insulator. The DS formation is realized by means of Silicide As Diffusion Source. Without DS treatment, the devices are typically p-type, but with a rather large electron branch at positive gate bias. Dopant segregation with As is found to turn the devices to well-performing n-MOSFETs, and DS with B to greatly enhance the hole conduction in the p-MOSFETs. A large threshold voltage (V-t) shift is however observed in the p-MOSFET due to B lateral spread caused during the drive-in process for the DS formation. By reducing the drive-in temperature, this problem is partially addressed with a smaller V-t shift and a much better control of short channel effect.
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  • Result 1-2 of 2
Type of publication
conference paper (2)
Type of content
peer-reviewed (2)
Author/Editor
Lu, J. (2)
Liu, R. (2)
Östling, Mikael (2)
Qiu, Zhijun (2)
Zhang, Zuhua (2)
Hellström, Per-Erik (1)
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Olsson, Jörgen, 1966 ... (1)
Zhang, ShiLin (1)
Zhang, Shi-Lin (1)
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University
Royal Institute of Technology (2)
Uppsala University (1)
Language
English (2)
Research subject (UKÄ/SCB)
Engineering and Technology (2)
Year
2008 (2)

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