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- Glasbey, JC, et al.
(author)
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- 2021
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swepub:Mat__t
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- Edwards, B., et al.
(author)
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Giant valleyZeeman coupling in the surface layer of an intercalated transition metal dichalcogenide
- 2023
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In: Nature Materials. - : Springer Science and Business Media LLC. - 1476-1122 .- 1476-4660. ; 22:4, s. 459-465
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Journal article (peer-reviewed)abstract
- Spin–valley locking is ubiquitous among transition metal dichalcogenides with local or global inversion asymmetry, in turn stabilizing properties such as Ising superconductivity, and opening routes towards ‘valleytronics’. The underlying valley–spin splitting is set by spin–orbit coupling but can be tuned via the application of external magnetic fields or through proximity coupling. However, only modest changes have been realized to date. Here, we investigate the electronic structure of the V-intercalated transition metal dichalcogenide V1/3NbS2 using microscopic-area spatially resolved and angle-resolved photoemission spectroscopy. Our measurements and corresponding density functional theory calculations reveal that the bulk magnetic order induces a giant valley-selective Ising coupling exceeding 50 meV in the surface NbS2 layer, equivalent to application of a ~250 T magnetic field. This energy scale is of comparable magnitude to the intrinsic spin–orbit splittings, and indicates how coupling of local magnetic moments to itinerant states of a transition metal dichalcogenide monolayer provides a powerful route to controlling their valley–spin splittings.
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- Radulovic, M., et al.
(author)
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Another Trip to the Wall: How Much Will Stacked DRAM Benefit HPC?
- 2015
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In: ACM International Conference Proceeding Series - Proceedings of the 1st International Symposium on Memory Systems, MEMSYS 2015, Washington, United States, 14-15 August 2015. - New York, NY, USA : ACM. - 9781450336048 ; 05-08-October-2015, s. 31-36
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Conference paper (peer-reviewed)abstract
- First defined two decades ago, the memory wall remains a fundamental limitation to system performance. Recent innovations in 3D-stacking technology enable DRAM devices with much higher bandwidths than traditional DIMMs. The first such products will soon hit the market, and some of the publicity claims that they will break through the memory wall. Here we summarize our analysis and expectations of how such 3D-stacked DRAMs will affect the memory wall for a set of representative HPC applications. We conclude that although 3D-stacked DRAM is a major technological innovation, it cannot eliminate the memory wall.
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- Siemann, Gesa R., et al.
(author)
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Spin-orbit coupled spin-polarised hole gas at the CrSe2-terminated surface of AgCrSe2
- 2023
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In: npj Quantum Materials. - 2397-4648. ; 8:1
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Journal article (peer-reviewed)abstract
- In half-metallic systems, electronic conduction is mediated by a single spin species, offering enormous potential for spintronic devices. Here, using microscopic-area angle-resolved photoemission, we show that a spin-polarised two-dimensional hole gas is naturally realised in the polar magnetic semiconductor AgCrSe2 by an intrinsic self-doping at its CrSe2-terminated surface. Through comparison with first-principles calculations, we unveil a striking role of spin-orbit coupling for the surface hole gas, unlocked by both bulk and surface inversion symmetry breaking, suggesting routes for stabilising complex magnetic textures in the surface layer of AgCrSe2.
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- Zivanovic, Andrej, et al.
(author)
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Co-evolution of AR gene copy number and structural complexity in endocrine therapy resistant prostate cancer
- 2023
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In: NAR Cancer. - : Oxford University Press. - 2632-8674. ; 5:3
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Journal article (peer-reviewed)abstract
- Androgen receptor (AR) inhibition is standard of care for advanced prostate cancer (PC). However, efficacy is limited by progression to castration-resistant PC (CRPC), usually due to AR re-activation via mechanisms that include AR amplification and structural rearrangement. These two classes of AR alterations often co-occur in CRPC tumors, but it is unclear whether this reflects intercellular or intracellular heterogeneity of AR. Resolving this is important for developing new therapies and predictive biomarkers. Here, we analyzed 41 CRPC tumors and 6 patient-derived xenografts (PDXs) using linked-read DNA-sequencing, and identified 7 tumors that developed complex, multiply-rearranged AR gene structures in conjunction with very high AR copy number. Analysis of PDX models by optical genome mapping and fluorescence in situ hybridization showed that AR residing on extrachromosomal DNA (ecDNA) was an underlying mechanism, and was associated with elevated levels and diversity of AR expression. This study identifies co-evolution of AR gene copy number and structural complexity via ecDNA as a mechanism associated with endocrine therapy resistance.
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- Zivanovic, D., et al.
(author)
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Main Memory in HPC: Do We Need More or Could We Live with Less?
- 2017
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In: Transactions on Architecture and Code Optimization. - : Association for Computing Machinery (ACM). - 1544-3973 .- 1544-3566. ; 14:1, s. Article nr 3-
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Journal article (peer-reviewed)abstract
- An important aspect of High-Performance Computing (HPC) system design is the choice of main memory capacity. This choice becomes increasingly important now that 3D-stacked memories are entering the market. Compared with conventional Dual In-line Memory Modules (DIMMs), 3D memory chiplets provide better performance and energy efficiency but lower memory capacities. Therefore, the adoption of 3D-stacked memories in the HPC domain depends on whether we can find use cases that require much less memory than is available now. This study analyzes the memory capacity requirements of important HPC benchmarks and applications. We find that the High-Performance Conjugate Gradients (HPCG) benchmark could be an important success story for 3D-stacked memories in HPC, but High-Performance Linpack (HPL) is likely to be constrained by 3D memory capacity. The study also emphasizes that the analysis of memory footprints of production HPC applications is complex and that it requires an understanding of application scalability and target category, i. e., whether the users target capability or capacity computing. The results show that most of the HPC applications under study have per-core memory footprints in the range of hundreds of megabytes, but we also detect applications and use cases that require gigabytes per core. Overall, the study identifies the HPC applications and use cases with memory footprints that could be provided by 3D-stacked memory chiplets, making a first step toward adoption of this novel technology in the HPC domain.
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