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  • Christle, David J., et al. (author)
  • Isolated electron spins in silicon carbide with millisecond coherence times
  • 2015
  • In: Nature Materials. - : Nature Publishing Group. - 1476-1122 .- 1476-4660. ; 14:2, s. 160-163
  • Journal article (peer-reviewed)abstract
    • The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries(1). Nonetheless, because certain SiC defects have electronic states with sharp optical and spin transitions, they are increasingly recognized as a platform for quantum information and nanoscale sensing(2-16). Here, we show that individual electron spins in high-purity monocrystalline 4H-SiC can be isolated and coherently controlled. Bound to neutral divacancy defects(2,3), these states exhibit exceptionally long ensemble Hahn-echo spin coherence times, exceeding 1 ms. Coherent control of single spins in a material amenable to advanced growth and microfabrication techniques is an exciting route towards wafer-scale quantum technologies.
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