| 1. |
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| 2. |
- Rogström, Lina, et al.
(author)
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Age hardening in arc-evaporated ZrAlN thin films
- 2010
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In: Scripta Materialia. - Amsterdam : Elsevier Science B.V.. - 1359-6462 .- 1872-8456. ; 62:10, s. 739-741
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Journal article (peer-reviewed)abstract
- Zr0.44Al0.56N1.20 films were deposited by reactive arc evaporation on WC-Co substrates. As-deposited films have a defect-rich NaCl-cubic and wurtzite phase mixture. During annealing at 1100 degrees C the films undergo simultaneous recovery of the ZrN-rich c-ZrAlN nanoscale domains and formation of semicoherent w-ZrAlN nanobricks, while the excess nitrogen is released. This process results in an age hardening effect as high as 36%, as determined by nanoindentation. At 1200 degrees C, the w-AlN recrystallizes and the hardening effect is lost.
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| 3. |
- Rogström, Lina, et al.
(author)
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Thermal stability and mechanical properties of arc evaporated ZrN/ZrAlN multilayers
- 2010
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In: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 519:2, s. 694-699
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Journal article (peer-reviewed)abstract
- ZrN1.20/Zr0.44Al0.56N1.20 multilayer films as well as ZrN1.17 and Zr0.44Al0.56N1.20 films were deposited by reactive arc evaporation on WC–Co substrates. Samples were post-deposition annealed for 2 h at 800–1200 °C. As-deposited and heat treated films were characterized by scanning transmission electron microscopy, X-ray diffraction and nanoindentation. The thermal stability was studied using a combination of differential scanning calorimetry, thermogravimetry, and mass spectrometry. The as-deposited Zr0.44Al0.56N1.20 film exhibits a nanocomposite structure of cubic and wurtzite ZrAlN. During annealing, the formation of ZrN- and AlN-rich domains results in age hardening of both the Zr0.44Al0.56N1.20 and the ZrN/ZrAlN multilayers. The age hardening is enhanced in the ZrN/ZrAlN multilayer due to straining of the ZrAlN sublayers in which a maximum hardness of 31 GPa is obtained after annealing at 1100 °C.
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| 4. |
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| 5. |
- Abom, A.E., et al.
(author)
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Characterization of the metal-insulator interface of field-effect chemical sensors
- 2003
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 93:12, s. 9760-9768
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Journal article (peer-reviewed)abstract
- The metal-insulator interface of hydrogen-sensitive metal-insulator-semiconductor capacitors, with SiO2 as the insulator and Pt as the metal contact, was discussed. It was found that the difference in hydrogen response between differently prepared devices was explained by a difference in concentration of available adsorption sites. The analysis showed that the concentration of Pt atoms in contact with the oxide affected both the hydrogen response and the metal-oxide adhesion.
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| 6. |
- Abom, A.E., et al.
(author)
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Influence of gate metal film growth parameters on the properties of gas sensitive field-effect devices
- 2002
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In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 409:2, s. 233-242
-
Journal article (peer-reviewed)abstract
- Thin films of Pt have been grown as gate metals on the oxide surface of gas sensitive field-effect devices. Both electron beam evaporation and dc magnetron sputtering has been used. The energy of the impinging Pt atoms, the substrate temperature and the thickness of the Pt film were used as parameters in this study. The influence of the growth parameters on the gas response has been investigated and compared with the properties of the films, studied by transmission electron microscopy, Auger electron spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction. The conditions during growth of the Pt film are found to have a large impact on the properties of the device. As expected, crystallinity, morphology and the metal/substrate interfacial structure are also affected by processing parameters. Three different growth processes stand out as the most promising from gas sensor considerations, namely room temperature evaporation, sputtering at high pressures and sputtering at high temperatures. The correlation between gas responses and properties of the gas sensitive layer is discussed. © 2002 Elsevier Science B.V. All rights reserved.
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| 7. |
- Abom, A.E., et al.
(author)
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Thin oxide films as surface modifiers of MIS field effect gas sensors
- 2002
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In: Sensors and actuators. B, Chemical. - 0925-4005 .- 1873-3077. ; 85:1-2, s. 109-119
-
Journal article (peer-reviewed)abstract
- The catalytic activity at the surface of Pt based MIS field effect gas sensors is modified by the deposition of thin films of SnO2, Al2O3 and SiO2, grown by reactive sputtering. It is found that a very thin layer (<10 nm) of SiO2 and SnO2 changes the catalytic activity towards higher NH3 selectivity, but with thicker films the sensor response vanishes. Since the response mechanism for these sensors is dependent on dissociation of molecules, it is likely that at low temperatures (140 °C), neither dissociation on nor transport/diffusion through the thicker films takes place. However, with Pt in conjunction with SiO2 or SnO2, the surface reactions will be altered, with enhanced NH3 selectivity as a result. A thin film of Al2O3, on the other hand, has a much smaller influence on the gas response to the test gases used in this work. Furthermore the sputtering process is found to strongly influence the sensor responses, and specifically reduce the sensitivity of the sensor. A thin intermediate layer of evaporated Pt does not completely protect the underlying structure from sputter induced damage. © 2002 Elsevier Science B.V. All rights reserved.
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| 8. |
- Aili, Carola, 1963-, et al.
(author)
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Research on teachers' professional lives : time to build a research network. Paper presented at NERA's 31st Congress, 6-9 March, Copenhagen
- 2003
-
Conference paper (peer-reviewed)abstract
- Teachers’ work has during the last ten years gone through great changes. The effects of postmodern society has made the work more and morecomplex and difficult to handle and understand for those involved as well as outsiders. Researchers are trying to keep up with things. The developmentof knowledge of teachers’ work takes place on different levels, in separate disciplines, from various starting-points and with different foci.To be able to describe, understand and explain the »new« work of teachers in a vigorous way there is need of getting these research initiativestogether. Arenas should be established where interchanges and coordination between researchers could take place. In order to make this happen wehave the intention of building a Swedish (our aim is to expand the network to the Nordic countries after the establishment in Sweden) network ofresearch on teachers’ professional lives.Besides presenting the intention and design of our network we also bring along some examples of research projects in line with the network ideas.
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| 9. |
- Aili, Carola, et al.
(author)
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Research on teachers' professional lives : time to build a research network. Paper presented at NERA's 31st Congress, 6-9 March, Copenhagen
- 2003
-
Conference paper (other academic/artistic)abstract
- Teachers’ work has during the last ten years gone through great changes. The effects of postmodern society has made the work more and morecomplex and difficult to handle and understand for those involved as well as outsiders. Researchers are trying to keep up with things. The developmentof knowledge of teachers’ work takes place on different levels, in separate disciplines, from various starting-points and with different foci.To be able to describe, understand and explain the »new« work of teachers in a vigorous way there is need of getting these research initiativestogether. Arenas should be established where interchanges and coordination between researchers could take place. In order to make this happen wehave the intention of building a Swedish (our aim is to expand the network to the Nordic countries after the establishment in Sweden) network ofresearch on teachers’ professional lives.Besides presenting the intention and design of our network we also bring along some examples of research projects in line with the network ideas.
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| 10. |
- Berlind, Torun, 1965-, et al.
(author)
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Microstructure, mechanical properties, and wetting behaviorof Si-C-N thin films grown by reactive magnetron sputtering
- 2001
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In: Surface and Coatings Technology. - : Elsevier. - 0257-8972. ; 141:2-3, s. 145-155
-
Journal article (peer-reviewed)abstract
- Silicon–carbon–nitride (Si–C–N) thin films were deposited by reactive magnetron co-sputtering of C and Si targets in a mixed Ar/N2 discharge. Films were grown to a thickness of more than 0.5 μm on graphite and Si(001) substrates held at a negative floating potential of −35 V, and substrate temperature between 100 and 700°C. The total pressure was constant at 0.4 Pa (3 mtorr), and the nitrogen fraction in the gas mixture was varied between 0 and 100%. As-deposited films were analyzed with respect to composition, state of chemical bonding, microstructure, mechanical properties, and wetting behavior by Rutherford backscattering spectroscopy (RBS), energy dispersive spectroscopy (EDS), X-ray photoelectron spectrometry (XPS), transmission electron microscopy (TEM), scanning electron microscopy (SEM), nanoindentation and contact angle measurements, respectively. Depending on the deposition condition, ternary SixCyNz films within the composition range 1≤x≤34 at.%, 34≤y≤81 at.%, and 16.5≤z≤42 at.% were prepared with a textured, amorphous-to-graphite-like microstructure. For Si–C–N films with low Si content, C---C, C---N and Si---C bonds were present. At higher Si content, N preferentially bonds to Si, while less C---N bonds were observed. Films containing more than 12 at.% of Si contained widely dispersed crystallites, 2–20 nm in diameter. Incorporation of a few at.% Si resulted in a dramatic reduction of the film surface energy compared to pure CN films. The measured contact angles using distilled water and glycerol liquids were for some films comparable with those on a polytetrafluoroethylene (PTFE), Teflon® surface. The hardness of Si–C–N films could be varied over the range 9–28 GPa.
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| 11. |
- Carlsson, Inga-Lill, 1955-
(author)
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Meeting increased logistical demands : Developing as a small- and medium-sized system supplier
- 2009
-
Licentiate thesis (other academic/artistic)abstract
- Many subcontractors choose to implement a strategy of “system supply” in order to meetincreasing global competition. They are then confronted with increased demands to take agreater overall responsibility in this role. It is important to investigate the implications of theseresponsibilities before investing in developing the organization, especially for a small- ormedium-sized subcontractor with limited resources. The customer’s view of different demandsdoes not necessarily correspond to how the supplier sees and chooses to interpret and meetthose demands. A supplier with several customers has to create reasonably uniform routines tomeet different demands, in order to cut costs. The customers chosen to serve as well asattitudes and priorities may influence the way different customer demands are met. Thepurpose of this study is to describe what the widened role of system supply might mean to asmall- or medium-sized subcontractor in terms of demands, capabilities and resources.After going through previous theory about different supplier roles and their characteristics asmall exploratory survey comparing demands between a component supplier and a systemsupplier was carried out. “System supplier” is, in this thesis, defined as a supplier with anoverall responsibility for the functionality of a product or a system of assembled components,produced in several process steps, and the resulting liability for purchase of material andservices. The focus is on small- or medium-sized suppliers that provide production services andare developing towards system supplying capabilities. The survey, based on existing customeragreements and demands on a relatively small supplier that is developing towards a systemsupplying role, gives insight to how customers and suppliers look at these demands. The resultsclearly point out some improvement areas. These are divided into a few “system demands”(such as systematic purchase and logistics work, product development and projectmanagement, and increased responsibilities) and more “generic demands” (for example qualityand delivery-precision).A small- or medium-sized subcontractor must acquire some logistics capabilities in order tocope with the system supplying role. In a multiple case study, a comparison of three companiesof different sizes with varying degrees of system supplying services is presented. With theresource-based view as a linchpin the interviews point out the importance of the management’sstrategic alignment to supply chain management and logistics, with special focus on centralsourcing and sourcing from low-cost regions. Other capabilities such as IT and communicationsystems, cost reduction capability, volume flexibility and breadth of product lines are alsoidentified. The interviews also served the purpose of identifying important resources groupedinto three different categories: organizational, competence-base, and tools. The differencesbetween the companies and in what way these different resources influence the formation ofdifferent logistics capabilities to support system supply are discussed.The conclusions drawn from comparing the three companies point out five system capabilities.One is the importance of a clear and distinct organization where the management understandsits role and responsibilities, managing its part of a larger system and its inherent processes.Supply chain management is another important system capability, where logistics skills andenhanced understanding and use of IT and other tools are identified as areas to improve for thesmaller companies. The importance of managing internal and external relations with extrafocus on customer relations is stressed. This also generally requires more overall managementof communications, making the best possible use of existing information and communicationstechnology. Finally, a basic and order-qualifying capability of managing the “genericdemands” is emphasized.
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| 12. |
- Danielsson, L, et al.
(author)
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Human monoclonal antibodies with different fine-specificity for digoxin derivatives: Cloning of heavy and light chain variable region sequences
- 1991
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In: Immunology. - 0019-2805. ; 74:1, s. 50-54
-
Journal article (peer-reviewed)abstract
- Human-mouse hybridoma cell lines producing human monoclonal antibodies against the cardiac glycoside digoxin were established after in vitro immunization or direct immortalization of human peripheral blood lymphocytes with digoxin. Three antibodies, designated M06, LH92 and LH 1 14, displayed different patterns of fine specificity against digoxin and several digoxin analogues, as elucidated by inhibition ELISA. All three monoclonal antibodies had p heavy chains, two of them (M06 and LH 114) had K light chains and one (LH92) A light chains. DNA encoding the variable regions of both heavy and light chains of the three antibodies were amplified from cDNA using the polymerase chain reaction (PCR). The nucleotide sequences of the amplified DNA were determined after subcloning of PCR fragments in M13 vectors. The deduced amino acid sequences revealed considerable sequence differences in the complementarity determining regions between the three antibodies.
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| 13. |
- Elisabeth, Abom A., et al.
(author)
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Properties of combined TiN and Pt thin films applied to gas sensing
- 2002
-
In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 20:3, s. 667-673
-
Journal article (peer-reviewed)abstract
- The effect of Pt in the proximity of TiN with respect to the oxidation behavior was addressed. TiN was grown at two different temperatures that are known to produce films with varying porosity. Pt was used as the catalytic metal and either deposited on top of the TiN film grown at 400°C or co-sputtered in a reactive atmosphere of Ar and N2 at the two different deposition temperatures. The films were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), x-ray diffraction, Auger electron spectroscopy (AES), and x-ray photoemission spectroscopy (XPS), and the gas response of the sensor to hydrogen, ammonia, propene, and acetaldehyde was measured. Aging studies were also carried out for a period of one month. Overall, significant results were obtained.
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| 14. |
- Engberg, David L. J., et al.
(author)
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Solid Solution and Segregation Effects in Arc-Deposited Ti1-xSixN Thin Films Resolved on the nanometer scale by 15N Isotopic Substitution in AtomP robe Tomography
-
Other publication (other academic/artistic)abstract
- Nanostructured TiSiN is an important material in wear--‐resistant coatings for extending the lifetime of cutting tools. Yet, the understanding regarding the structure, phase composition, and bonding on the detailed nanometer scale, which determines the properties of TiSiN, is lacking. This limits our understanding of the growth phenomena and eventually a larger exploitation of the material. By substituting natN2 with 15N2 during reactive arc deposition of TiSiN thin films, atom probe tomography (APT) gives elemental sensitivity and sub-nanometer resolution, a finer scale than what can be obtained by commonly employed energy dispersive electron spectroscopy in scanning transmission electron microscopy. Using a combination of analytical transmission electron microscopy and APT we show that arc-deposited Ti0.92Si0.0815N and Ti0.81Si0.1915N exhibit Si segregation on the nanometer scale in the alloy films. APT composition maps and proximity histograms from domains with higher than average Ti content show that the TiN domains contain at least ~2 at. % Si for Ti0.92Si0.08N and ~5 at. % Si for Ti0.81Si0.19N, thus confirming the formation of solid solutions. The formation of relatively pure SiNy domains in the Ti0.81Si0.19N films is tied to pockets between microstructured, columnar features in the film. Finer SiNy enrichments seen in APT possibly correspond to tissue layers around TiN crystallites, thus effectively hindering growth of TiN crystallites, causing TiN renucleation and thus explaining the featherlike nanostructure within the columns of these films. For the stoichiometry of the TiN phase, we establish a global under stoichiometry, in accordance with the tendency for SiNy films to have tetrahedral bonding coordination towards a nominal Si3N4 composition.
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| 15. |
- Eriksson, Anders, et al.
(author)
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Arc deposition of Ti–Si–C–N thin films from binary and ternary cathodes — Comparing sources of C
- 2012
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In: Surface & Coatings Technology. - : Elsevier. - 0257-8972 .- 1879-3347. ; 213, s. 145-154
-
Journal article (peer-reviewed)abstract
- Ti–Si–C–N thin films with composition of 1–11 at.% Si and 1–20 at.% C have been deposited onto cemented carbide substrates by arcing Ti–Si cathodes in a CH4 + N2 gas mixture and, alternatively, through arcing Ti–Si–C cathodes in N2. Films of comparable compositions from the two types of cathodes have similar structure and properties. Hence, C can be supplied as either plasma ions generated from the cathode or atoms from the gas phase with small influence on the structural evolution. Over the compositional range obtained, the films were dense and cubic-phase nanocrystalline, as characterized by X-ray diffraction, ion beam analysis, and scanning and transmission electron microscopy. The films have high hardness (30–40 GPa by nanoindentation) due to hardening from low-angle grain boundaries on the nanometer scale and lattice defects such as growth-induced vacancies and alloying element interstitials.
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| 16. |
- Eriksson, Anders, et al.
(author)
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Layer Formation by Resputtering in Ti-Si-C Hard Coatings during Large Scale Cathodic Arc Deposition
- 2011
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In: Surface & Coatings Technology. - : Elsevier. - 0257-8972 .- 1879-3347. ; 205:15, s. 3923-3930
-
Journal article (peer-reviewed)abstract
- This paper presents the physical mechanism behind the phenomenon of self-layering in thin films made by industrial scale cathodic arc deposition systems using compound cathodes and rotating substrate fixture. For Ti-Si-C films, electron microscopy and energy dispersive x-ray spectrometry reveals a trapezoid modulation in Si content in the substrate normal direction, with a period of 4 to 23 nm dependent on cathode configuration. This is caused by preferential resputtering of Si by the energetic deposition flux incident at high incidence angles when the substrates are facing away from the cathodes. The Ti-rich sub-layers exhibit TiC grains with size up to 5 nm, while layers with high Si-content are less crystalline. The nanoindentation hardness of the films increases with decreasing layer thickness.
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| 17. |
- Eriksson, Anders, et al.
(author)
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Ti-Si-C-N Thin Films Grown by Reactive Arc Evaporation from Ti3SiC2 Cathodes
- 2011
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In: Journal of Materials Research. - : Cambrdige University Press. - 0884-2914 .- 2044-5326. ; 26, s. 874-881
-
Journal article (peer-reviewed)abstract
- Ti-Si-C-N thin films were deposited onto WC-Co substrates by industrial scale arc evaporation from Ti3SiC2 compound cathodes in N2 gas. Microstructure and hardness were found to be highly dependent on the wide range of film compositions attained, comprising up to 12 at.% Si and 16 at.% C. Nonreactive deposition yielded films consisting of understoichiometric TiCx, Ti and silicide phases with high (27 GPa) hardness. At a nitrogen pressure of 0.25-0.5 Pa, below that required for N saturation, superhard, 45-50 GPa, (Ti,Si)(C,N) films with a nanocrystalline feathered structure were formed. Films grown above 2 Pa displayed crystalline phases of more pronounced nitride character, but with C and Si segregated to grain boundaries to form weak grain boundary phases. In abundance of N, the combined presence of Si and C disturb cubic phase growth severely and compromises the mechanical strength of the films.
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| 18. |
- Eriksson, Mats, 1963-, et al.
(author)
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The water-forming reaction on thin, SiO2 supported, palladium films
- 1990
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In: Vacuum. - 0042-207X .- 1879-2715. ; 41:1-3, s. 137-138
-
Journal article (peer-reviewed)abstract
- The water-forming reaction has been studied on thin Pd films, evaporated on planar SiO2 substrates. The nominal film thickness varied between 5 and 100 Å. The studies were performed in uhv by means of mass spectrometry, UPS and work function measurements in the temperature range 323–523 K. The film structure was also studied with TEM. The results are compared with previous measurements on 1000 Å, thick, homogeneous Pd films. The structure of the thin Pd films changed dramatically during cyclic H2 and O2 exposures, from that of a continuous film with cracks to that of drop-like metal particles. These structural changes are not observed on the thick (1000 Å) Pd films. Even though there are large structural changes, the water-forming reaction looks qualitatively the same as on a thick Pd film. The total water production however, decreases with decreasing film thickness. We believe that some minor qualitative differences in the water-forming reaction for different nominal Pd film thicknesses, are due to the increasing PdSiO2 boundary as the thickness is reduced.
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| 19. |
- Fager, Hanna, et al.
(author)
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Growth of Hard Amorphous Ti-Al-Si-N Thin Films by Cathodic Arc Evaporation
- 2013
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In: Surface & Coatings Technology. - : Elsevier BV. - 0257-8972 .- 1879-3347. ; 235:25, s. 376-385
-
Journal article (peer-reviewed)abstract
- Ti(1−x−y)AlxSiyNz (0.02≤x≤0.46, 0.02≤y≤0.28, and 1.08≤z≤1.29) thin films were grown on cemented carbide substrates in an industrial scale cathodic arc evaporation system using Ti-Al-Si compound cathodes in a N2 atmosphere. The microstructure of the as-deposited films changes from nanocrystalline to amorphous by addition of Al and Si to TiN. Upon incorporation of 12 at% Si and 18 at% Al, the films assume an x-ray amorphous state. Post-deposition anneals show that the films are thermally stable up to 900 ◦C. The films exhibit age hardening up to 1000 ◦C with an increase in hardness from 21.9 GPa for as-deposited films to 31.6 GPa at 1000 ◦C. At 1100 ◦C severe out-diffusion of Co and W from the substrate occur, and the films recrystallize into c-TiN and w-AlN.
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| 20. |
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| 21. |
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| 22. |
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| 23. |
- Hellgren, Niklas, et al.
(author)
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Fullerene-like B C N thin films a computational andexperimental study
- 2004
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In: Materials Science and Engineering B. - : Elsevier. ; 113:3, s. 242-247
-
Journal article (peer-reviewed)abstract
- Ab initio calculations show that the energy cost for incorporating lattice defects such as pentagons and heptagons is significantly reduced for BCN compared to BN, thus promoting bending of basal planes in these compounds. Boron–carbon–nitride (Bsingle bondCsingle bondN) thin films with a fullerene-like (FL) microstructure were then deposited by dual cathode magnetron sputtering from C and B4C targets. Up to 1 μm thick films were grown at a total gas pressure of 3 mTorr (0.4 Pa) in varying Ar/N2 ratios, and substrate temperatures between 225 and 350 °C. Compositional and microstructural studies were performed using RBS, SEM and HREM, respectively. Depending on the deposition condition, ternary BxCyNz films with fullerene-like microstructure could be prepared in agreement with the calculations within the composition range 0 ≤ x ≤ 53, 15 ≤ y ≤ 62, and 24 ≤ z ≤ 50 at.%. Fullerene-like structures also tend to form at lower temperatures in the case of BCN compared to CN. Nanoindentation measurements show that all BxCyNz films exhibited a highly elastic response independent of elemental composition. In addition, the calculations suggest a driving force for C and BN phase separation.
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| 24. |
- Hellgren, N., et al.
(author)
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Growth, structure, and mechanical properties of CNxHy films deposited by dc magnetron sputtering in N2/Ar/H2 discharges
- 2000
-
In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 18:5, s. 2349-2358
-
Journal article (peer-reviewed)abstract
- Reactive direct current magnetron sputtering was used to deposit the hydrogenated carbon nitride films in mixed nitrogen (N2)/argon (Ar)/ hydrogen (H2) discharges. Growth and structure evolution of films was found to be affected by chemical sputtering effects. The hydrogen were found to be bonded to nitrogen and hydrogen incorporation decreases the elasticity and hardness.
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| 25. |
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