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- Persson, Anton E.O., et al.
(author)
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Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
- 2020
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 116:6
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Journal article (peer-reviewed)abstract
- Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 μ C / cm 2 even down to an annealing temperature of 370 °C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance-voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution transmission electron microscopy verifies a maintained sharp high-κ/InAs interface.
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