| 1. |
- Rögnvaldsson, Thorsteinn, 1963-, et al.
(author)
-
ARC13 – Assessment of Research and Coproduction : Reports from the assessment of all research at Halmstad University 2013
- 2014
-
Reports (pop. science, debate, etc.)abstract
- During 2013, an evaluation of all the research conducted at Halmstad University was carried out. The purpose was to assess the quality of the research, coproduction, and collaboration in research, as well as the impact of the research. The evaluation was dubbed the Assessment of Research and Coproduction 2013, or ARC13. (Extract from Executive Summary)
|
|
| 2. |
- Aghaeipour, Mahtab, et al.
(author)
-
Comparative study of absorption efficiency of inclined and vertical InP nanowires
- 2017
-
In: Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI. - Bellingham, WA : SPIE - International Society for Optical Engineering. - 9781510606401 ; 10099
-
Conference paper (peer-reviewed)abstract
- Geometrically designed III-V nanowire arrays are promising candidates for optoelectronics due to their possibility to excite nanophotonic resonances in absorption spectra. Strong absorption resonances can be obtained by proper tailoring of nanowire diameter, length and pitch. Such enhancement of the light absorption is, however, accompanied by undesired resonance dips at specific wavelengths. In this work, we theoretically show that tilting of the nanowires mitigates the absorption dips by exciting strong Mie resonances. In particular, we derive a theoretical optimum inclination angle of about 30 degrees at which the inclined nanowires gain 8% in absorption efficiency compared to vertically standing nanowires in a spectral region matching the intensity distribution of the sun. The enhancement is due to engineering the excited modes inside the nanowires regarding the symmetry properties of the nanowire/light system without increasing the absorbing material. We expect our results to be important for nanowire-based photovoltaic applications. © 2017 SPIE.
|
|
| 3. |
- Aghaeipour, Mahtab, et al.
(author)
-
Enhanced optical absorption in nanowires over a desire range of wavelengths
- 2017
-
In: MOC2017 : technical digest of the Twenty-Second Microoptics Conference. - : IEEE. - 9784863486096 - 9781509049240 ; , s. 360-361
-
Conference paper (peer-reviewed)abstract
- Engineering optical absorption in nanowires, over a desire range of wavelengths is of importance to design high-performance nanowire-based photovoltaics. To this end, we integrate the nanowires with distributed Bragg reflectors to enhance absorption spectra of the nanowires and relate the consequent enhancement to increasing the optical path lengths of the modes. © 2017 The Japan Society of Applied Physics.
|
|
| 4. |
- Aghaeipour, Mahtab
(author)
-
Tailoring the Optical Response of III-V Nanowire Arrays
- 2017
-
Doctoral thesis (other academic/artistic)abstract
- Semiconductor nanowires show a great deal of promise for applications in a wide range of important fields, including photovoltaics, biomedicine, and information technology. Developing these exciting applications is strongly dependent on understanding the fundamental properties of nanowires, such as their optical resonances and absorption spectra. In this thesis we explore optical absorption spectra of arrays of vertical III-V nanowires with a special emphasis on structures optimized to enhance absorption in the solar spectrum. First, we analyze experimentally determined absorption spectra of both indium phosphide (InP) and gallium phosphide (GaP) nanowire arrays. The study provides an intuitive understanding of how the observed absorption resonances in the nanowires may be tuned as a function of their geometrical parameters and crystal structure. As a consequence, the spectral position of absorption resonances can be precisely controlled through the nanowire diameter. However, the results highlight how the blue-shift in the optical absorption resonances as the diameter of the nanowires decreases comes to a halt at low diameters. The stop point is related to the behavior of the refractive indices of the nanowires. The wavelength of the stop is different for nanowire polytypes of similar dimensions due to differences in their refractive indices. We then present a theoretical argument that it is important to consider symmetry properties when tailoring the optical modes excited in the nanowires for enhanced absorption. We show that absorption spectra may be enhanced compared to vertical nanowires at normal incidence by tilting the nanowires with normal incidence light, or by using off-normal incidence with vertical nanowires. This is because additional optical modes inside the nanowires are excited when the symmetry is broken. Looking forward to omnidirectional applications, we consider branched nanowires as a way to enhance the absorption spectra at normal incidence by taking advantage of simultaneous excitation of the spectrally different optical modes in the branches and the stems. Third, we describe in theoretical terms how integrating distributed Bragg reflectors (DBRs) with the nanowires can improve absorption spectra compared to conventional nanowires. DBRs provide a way to employ light trapping mechanisms which increases the optical path length of the excited modes and thereby improves the absorption of the excited modes. At normal incidence, DBR-nanowires improve the absorption efficiency to 78%, compared to 72% for conventional nanowires. We show that the efficiency is increased to 85% for an off-normal incident angle of 50˚. Overall, our results show that studies of optical resonances in nanowires that take the light-matter interaction into account provide opportunities to develop novel optical and optoelectronic functionalities in nanoscience and nanotechnology.
|
|
| 5. |
|
|
| 6. |
- Bordag, Michael, et al.
(author)
-
Parallel nano-assembly directed by short-range field forces
- 2006
-
In: Proceedings of the 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems. - Piscataway, United States : IEEE Press. - 9781424401390 ; , s. 620-622
-
Conference paper (peer-reviewed)abstract
- We present the ECs Sixth Framework Programme PARNASS project, which stands for 'Parallel nano assembling directed by short-range field forces' and represents a radical innovative approach to fabricating large volumes of hybrid nano electronic devices. The project combines in a synergy the 'top-down' and 'bottom-up' methods addressing one of the challenging physical and engineering problems of the very high accuracy over a large area. An array of specially designed nano-scale force field sources has to be a key part of this innovative approach to large-scale nano manufacturing. © 2006 IEEE.
|
|
| 7. |
- Borschel, Christian, et al.
(author)
-
A New Route toward Semiconductor Nanospintronics : Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions
- 2011
-
In: Nano letters (Print). - Washington : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 11:9, s. 3935-3940
-
Journal article (peer-reviewed)abstract
- We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance measurements showed a decrease at low temperatures, indicating paramagnetism. Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system.
|
|
| 8. |
|
|
| 9. |
- Chalangar, Ebrahim, 1984-, et al.
(author)
-
Influence of morphology on electrical and optical properties of graphene/Al-doped ZnO-nanorod composites
- 2018
-
In: Nanotechnology. - Bristol : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 29:41
-
Journal article (peer-reviewed)abstract
- The development of future 3D-printed electronics relies on the access to highly conductive inexpensive materials that are printable at low temperatures (<100 C). The implementation of available materials for these applications are, however, still limited by issues related to cost and printing quality. Here, we report on the simple hydrothermal growth of novel nanocomposites that are well suited for conductive printing applications. The nanocomposites comprise highly Al-doped ZnO nanorods grown on graphene nanoplatelets (GNPs). The ZnO nanorods play the two major roles of (i) preventing GNPs from agglomerating and (ii) promoting electrical conduction paths between the graphene platelets. The effect of two different ZnO-nanorod morphologies with varying Al-doping concentration on the nanocomposite conductivity and the graphenedispersity are investigated. Time-dependent absorption, photoluminescence and photoconductivity measurements show that growth in high pH solutions promotes a better graphene dispersity, higher doping levels and enhanced bonding between the graphene and the ZnO nanorods. Growth in low pH solutions yields samples characterized by a higher conductivity and a reduced number of surface defects. These samples also exhibit a large persistent photoconductivity attributed to an effective charge separation and transfer from the nanorods to the graphene platelets. Our findings can be used to tailor the conductivity of novel printable composites, or for fabrication of large volumes of inexpensive porous conjugated graphene-semiconductor composites. © 2018 IOP Publishing Ltd.
|
|
| 10. |
- Chalangar, Ebrahim, PhD student, 1984-, et al.
(author)
-
Nanopatterned rGO/ZnO : Al seed layer for vertical growth of single ZnO nanorods
- 2023
-
In: Nanotechnology. - Bristol : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 34:25, s. 1-7
-
Journal article (peer-reviewed)abstract
- In this work, we demonstrate a novel low-cost template-assisted route to synthesize vertical ZnO nanorod arrays on Si (100). The nanorods were grown on a patterned double seed layer comprised of reduced graphene oxide (rGO) and Al-doped ZnO nanoparticles. The seed layer was fabricated by spray-coating the substrate with graphene and then dip-coating it into a Al-doped ZnO sol-gel solution. The growth template was fabricated from a double-layer resist, spin-coated on top of the rGO/ZnO:Al seed layer, and patterned by colloidal lithography. The results show a successful chemical bath deposition of vertically aligned ZnO nanorods with controllable diameter and density in the nanoholes in the patterned resist mask. Our novel method can presumably be used to fabricate electronic devices on virtually any smooth substrate with a thermal budget of 1 min at 300 °C with the seed layer acting as a conductive strain-relieving back contact. The top contact can simply be made by depositing a suitable transparent conductive oxide or metal, depending on the specific application. © 2023 The Author(s). Published by IOP Publishing Ltd.
|
|
| 11. |
- Conache, Gabriela, 1977-, et al.
(author)
-
Nanowire friction with an applied bias
- 2009
-
Conference paper (peer-reviewed)abstract
- Recently, we have shown how the friction acting on nanowires pushed across a surface by an AFM tip can be determined by measuring the radius of curvature of the bent wire aŸer manipulation. This technique allows us to study the friction properties of an extended mesoscale contact. Our main focus has been to determine whether such contacts behave like macroscopic objects, in which dišerences between the 'true' and 'apparent' contact areas play a key role and friction varies linearly with the applied normal force, or whether they are more like atomic-scale point contacts, wheremore fundamental processes dominate and friction oŸen is independent of the normal force. In this work we show how the friction between InAs nanowires and an insulating silicon nitride layer on a conductive silicon substrate varies when a DC voltage is applied to the AFM tip during manipulation. e tip charges the capacitor formed by the wire and the grounded silicon back contact, giving rise to attractive Coulomb forces and thus increasing the contact pressure between the wire and the silicon nitride. In this way we can vary the normal force on the sliding surfaces using a single wire, with a constant structure and contact geometry. Using nanowires of about 40-50 nm diameter and a few microns in length we have applied tip voltages in the range +12 to -12 V. Simplemodeling indicates that these voltages su›ce to give similar levels of band-lling and depletion to when the same wires are used in working wrap-gate or back-gate devices. A monotonic increase of the sliding friction with the voltage applied on the tip was observed. is implies that the friction increases with the normal force and that this mesoscopic system behaves more like a macroscopic contact, despite the nanometer size of the contact in the direction of motion.
|
|
| 12. |
- Devi, Chandni, et al.
(author)
-
Electrical transport properties of InAs nanowires synthesized by a solvothermal method
- 2020
-
In: Nanotechnology. - Bristol : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 31:23
-
Journal article (peer-reviewed)abstract
- Nanowires are widely considered to be key elements in future disruptive electronics and photonics. This paper presents the first detailed study of transport mechanisms in single-crystalline InAs nanowires synthesized by a cheap solvothermal wet chemical method. From detailed analyses of temperature-dependent current-voltage characteristics, it was observed that contacted nanowires operate in a linear transport regime at biases below a critical cross-over voltage. For larger biases, the transport changes to space-charge-limited conduction assisted by traps. The characteristic parameters such as free electron concentration, trap concentration and energy distribution, and electron mobility were all calculated. It was demonstrated that the nanowires have key electrical properties comparable to those of InAs nanowires grown by molecular beam epitaxy. Our results might pave the way for cheap disruptive low-dimensional electronics such as resistive switching devices. © 2020 IOP Publishing Ltd.
|
|
| 13. |
- Devi, Chandni, et al.
(author)
-
High sodium ionic conductivity in PEO/PVP solid polymer electrolytes with InAs nanowire fillers
- 2021
-
In: Scientific Reports. - London : Nature Publishing Group. - 2045-2322. ; 11:1
-
Journal article (peer-reviewed)abstract
- Solid-state sodium ion batteries are frequently referred to as the most promising technology for next-generation energy storage applications. However, developing a suitable solid electrolyte with high ionic conductivity, excellent electrolyte–electrode interfaces, and a wide electrochemical stability window, remains a major challenge. Although solid-polymer electrolytes have attracted great interest due to their low cost, low density and very good processability, they generally have significantly lower ionic conductivity and poor mechanical strength. Here, we report on the development of a low-cost composite solid polymer electrolyte comprised of poly(ethylene oxide), poly(vinylpyrrolidone) and sodium hexafluorophosphate, mixed with indium arsenide nanowires. We show that the addition of 1.0% by weight of indium arsenide nanowires increases the sodium ion conductivity in the polymer to 1.50 × 10−4 Scm−1 at 40 °C. In order to explain this remarkable characteristic, we propose a new transport model in which sodium ions hop between close-spaced defect sites present on the surface of the nanowires, forming an effective complex conductive percolation network. Our work represents a significant advance in the development of novel solid polymer electrolytes with embedded engineered ultrafast 1D percolation networks for near-future generations of low-cost, high-performance batteries with excellent energy storage capabilities. © 2021, The Author(s).
|
|
| 14. |
- Fu, Y., et al.
(author)
-
Reduced effective temperature of hot electrons in nano-sized metal-oxide-semiconductor field-effect transistors
- 2003
-
In: Applied Physics A. - Berlin / Heidelberg : Springer Berlin/Heidelberg. - 0947-8396 .- 1432-0630. ; 77:6, s. 799-803
-
Journal article (peer-reviewed)abstract
- Hot electron effects have been extensively studied in metal-oxide-semiconductor field-effect transistors (MOSFETs). The importance of these effects when the dimensions are drastically reduced has so far not been thoroughly investigated. The scope of this paper is therefore to present a detailed study of the effective temperature of excess electrons in nanoscale MOSFETs by solving coupled Schrödinger and Poisson equations. It is found that the increased doping levels and reduced junction depths lead to substantially higher local Fermi levels in the source and drain regions. As a result, the temperature difference between electrons injected into the drain and local electrons is reduced. The scaling of the gate oxide thickness, as well as the drain voltage furthermore reduces the electron temperature in the drain. The detrimental effects of hot electron injection are therefore expected to be decreased by scaling the MOSFET.
|
|
| 15. |
- Gooth, Johannes, et al.
(author)
-
Local Magnetic Suppression of Topological Surface States in Bi2Te3 Nanowires
- 2016
-
In: ACS Nano. - Washington : American Chemical Society (ACS). - 1936-0851 .- 1936-086X. ; 10:7, s. 7180-7188
-
Journal article (peer-reviewed)abstract
- Locally induced, magnetic order on the surface of a topological insulator nanowire could enable room-temperature topological quantum devices. Here we report on the realization of selective magnetic control over topological surface states on a single facet of a rectangular Bi2Te3 nanowire via a magnetic insulating Fe3O4 substrate. Low-temperature magnetotransport studies provide evidence for local time-reversal symmetry breaking and for enhanced gapping of the interfacial 1D energy spectrum by perpendicular magnetic-field components, leaving the remaining nanowire facets unaffected. Our results open up great opportunities for development of dissipation-less electronics and spintronics.
|
|
| 16. |
- Hallquist, Mattias, 1969, et al.
(author)
-
Photochemical smog in China: scientific challenges and implications for air-quality policies
- 2016
-
In: National Science Review. - : Oxford University Press (OUP). - 2095-5138 .- 2053-714X. ; 3:4, s. 401-403
-
Journal article (peer-reviewed)abstract
- In large areas of China severe air pollution events pose a significant threat to human health, ecosystems and climate. Current reduction of primary emissions will also affect secondary pollutants such as ozone (O3) and particulate matter (PM), but the magnitude of the effects is uncertain. Major scientific challenges are related to the formation of O3 and secondary particulate matter including Secondary Organic Aerosols (SOA). Large uncertainties also remain regarding the interactions of soot, SOA and O3 under the influence of different SO2, NOX and VOC concentrations. To improve the understanding of these secondary atmospheric interactions in China, scientific areas of central importance for photochemically induced air pollutants have been identified. In addition to the scientific challenges, results from research need to be synthesized across several disciplines and communicated to stakeholders affected by air pollution and to policy makers responsible for developing abatement strategies. Development of these science-policy interactions can benefit from experience gained under the UN ECE Convention on Long Range Transboundary Air Pollution (LRTAP)
|
|
| 17. |
- Hussain, Laiq, 1979-, et al.
(author)
-
SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE
- 2018
-
In: Journal of the Korean Physical Society. - : Korean Physical Society. - 0374-4884 .- 1976-8524. ; 73:11, s. 1604-1611
-
Journal article (peer-reviewed)abstract
- Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of GaAsxSb1−x, In1−xGaxSb, and InAsxSb1−x with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from 2 μm to 12 μm in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from InAsxSb1−x and In1−xGaxSb samples even at room temperature show promising potential for IR photodetector applications.
|
|
| 18. |
|
|
| 19. |
- Höglund, Linda, 1974-, et al.
(author)
-
Origin of photocurrent in lateral quantum dots-in-a-well infrared photodetectors
- 2006
-
In: Applied Physics Letters. - New York : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 88:21
-
Journal article (peer-reviewed)abstract
- Interband and intersubband transitions of lateral InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetectors were studied in order to determine the origin of the photocurrent. The main intersubband transition contributing to the photocurrent (PC) was associated with the quantum dot ground state to the quantum well excited state transition. By a comparison between intersubband PC measurements and the energy level scheme of the structure, as deduced from Fourier transform photoluminescence (FTPL) and FTPL excitation spectroscopies, the main transition contributing to the PC was identified.
|
|
| 20. |
- Höglund, Linda, 1974-, et al.
(author)
-
Quantum dots-in-a-well infrared photodetectors for long wavelength infrared detection
- 2006
-
In: Proceedings of SPIE. - Bellingham, Wash. : SPIE - International Society for Optical Engineering. - 9780819464996 ; 6401, s. 1-640109
-
Conference paper (peer-reviewed)abstract
- We report on a quantum dots-in-a-well infrared photodetector (DWELL QDIP) grown by metal organic vapor phase epitaxy. The DWELL QDIP consisted of ten stacked InAs/In0.5Ga0.85As/GaAs QD layers embedded between n-doped contact layers. The density of the QDs was about 9 × 10 10 cm-2 per QD layer. The energy level structure of the DWELL was revealed by optical measurements of interband transitions, and from a comparison with this energy level scheme the origin of the photocurrent peaks could be identified. The main intersubband transition contributing to the photocurrent was associated with the quantum dot ground state to the quantum well excited state transition. The performance of the DWELL QDIPs was evaluated regarding responsivity and dark current for temperatures between 15 K and 77 K. The photocurrent spectrum was dominated by a LWIR peak, with a peak wavelength at 8.4 μm and a full width at half maximum (FWHM) of 1.1 μm. At an operating temperature of 65 K, the peak responsivity was 30 mA/W at an applied bias of 4 V and the dark current was 1.2×10-5 A/cm2. Wavelength tuning from 8.4 μm to 9.5 μm was demonstrated, by reversing the bias of the detector.
|
|
| 21. |
- Höglund, Linda, et al.
(author)
-
Tuning of the detection wavelength in quantum dots-in-a-well infrared photodetectors
- 2008
-
In: Proceedings of SPIE, 6940, Infrared Technology and Applications XXXIV, 694002. - : SPIE. - 9780819471314
-
Conference paper (peer-reviewed)abstract
- In this study, bias mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well (DWELL) infrared photodetectors. In DWELL structures, intersubband transitions in the conduction band occur from a discrete state in the quantum dot to a subband inthe quantum well. Compared to "conventional" quantum dot infrared photodetectors, where the transitions take place between different discrete bands in thequantum dots, new possibilities to tune the detection wavelength window are opened up, partly by varying the quantum dot energy levels and partly by adjusting the width and composition of the quantum well. In the DWELL structure used, an asymmetric positioning of the InAs quantum dot layer in a 8 nm wide In0.15Ga0.85As/GaAs QW has been applied which enables tuning of the peak detection wavelength within the long wavelength infrared (LWIR; 8 - 14 gm) region. When the applied bias was reversed, a wavelength shift from 8.5 to 9.5 mu m was observed for the peak position in the spectral response. For another DWELL structure, with a well width of 2 nm, the tuning range of the detector could be shifted from the medium wavelength infrared (MWIR; 3-5 mu m) region to the LWIR region. With small changes in the applied bias, the peak detection wavelength could be shifted from 5.1 to 8 mu m. These tuning properties ofDWELL structures could be essential for applications such as modulators and two-colour infrared detection. © (2008) COPYRIGHT SPIE--The International Society for Optical Engineering.
|
|
| 22. |
|
|
| 23. |
|
|
| 24. |
- Jafari Jam, R., et al.
(author)
-
Embedded sacrificial AlAs segments in GaAs nanowires for substrate reuse
- 2020
-
In: Nanotechnology. - Bristol : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 31:20
-
Journal article (peer-reviewed)abstract
- We report on the use of a sacrificial AlAs segment to enable substrate reuse for nanowire synthesis. A silicon nitride template was deposited on a p-type GaAs substrate. Then a pattern was transferred to the substrate by nanoimprint lithography and reactive ion etching. Thermal evaporation was used to define Au seed particles. Metalorganic vapour phase epitaxy was used to grow AlAs-GaAs NWs in the vapour-liquid-solid growth mode. The yield of synthesised nanowires, compared to the number expected from the patterned template, was more than 80%. After growth, the nanowires were embedded in a polymer and mechanically removed from the parent substrate. The parent substrate was then immersed in an HCl:H2O (1:1) mixture to dissolve the remaining stub of the sacrificial AlAs segment. The pattern fidelity was preserved after peeling off the nanowires and cleaning, and the semiconductor surface was flat and ready for reuse. Au seed particles were then deposited on the substrate by use of pulse electrodeposition, which was selective to the openings in the growth template, and then nanowires were regrown. The yield of regrowth was less optimal compared to the first growth but the pattern was preserved. Our results show a promising approach to reduce the final cost of III-V nanowire based solar cells. © 2020 The Author(s). Published by IOP Publishing Ltd.
|
|
| 25. |
- Jafari Jam, Reza
(author)
-
Gold Electrodeposition in Semiconductor Nanowire Technology
- 2017
-
Licentiate thesis (other academic/artistic)abstract
- Semiconductor nanowires are widely considered as promising candidates for next generations of electronics and optoelectronics. Gold seed particles have so far been recognized as the most important catalyst for growth of nanowires. Costs related to substrates, lithography processes and gold consumption most strongly influence the final cost of nanowire-based devices. An optimum gold deposition process can facilitate re-use of substrates, avoid repetitive lithogra-phy processes and reduce the gold consumption in order to reduce the cost of the final device. In this work, we report on nanowire seed definition by gold electrodeposition. Electron microscopy inspection and optical spectroscopy confirm that the subsequently grown III-V nanowires have surface morphology and crystal quality comparable to those of nanowires grown from seed particles defined by conventional thermal evaporation. For seeding of substrates used in a typical growth run, we used around 650 times less gold with a 10 times higher throughput as compared to thermal evaporation. Using selective gold electrodeposition, we demonstrated redeposition of seed particles on a substrate after nanowire peel-off in order to reuse it for multiple growth runs. We also demonstrated the possibility of depositing seed particles in deep holes etched in thick masks to facilitate template-assisted growth of nanowires on (001) substrates.
|
|
