| 1. |
- Höglund, Linda, 1974-, et al.
(author)
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Energy level scheme of InAs/InxGa1-xAs/GaAs quantum-dots-in-a-well infrared photodetector structures
- 2010
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In: Physical Review B. Condensed Matter and Materials Physics. - Woodbury, NY : American Physical Society. - 1098-0121 .- 1550-235X. ; 82:3, s. 035314-
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Journal article (peer-reviewed)abstract
- A thorough investigation of quantum-dots-in-a-well structures for infrared photodetector applications has been performed employing different experimental techniques. The electronic structure of self-assembled InAs quantum dots embedded in an In0.15Ga0.85As/GaAs quantum well (QW) was deduced from photoluminescence (PL) and PL excitation (PLE) spectroscopy. From polarization-dependent PL it was revealed that the quantum dots hold two electron energy levels and two heavy-hole levels. Tunnel capacitance spectroscopy confirmed an electron energy level separation of about 50 meV, and additionally, that the conduction-band ground state and excited state of the dots are twofold and fourfold degenerates, respectively. Intersubband photocurrent spectroscopy, combined with simultaneous interband pumping of the dots, revealed a dominant transition at 150 meV (8.5 mu m) between the ground state of the quantum dots and the excited state of the QW. Results from detailed full three-dimensional calculations of the electronic structure, including effects of composition intermixing and interdot interactions, confirm the experimentally unravelled energy level scheme of the dots and well.
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| 2. |
- Nilsson, Henrik, et al.
(author)
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Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
- 2011
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 110:6
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Journal article (peer-reviewed)abstract
- We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgap InSb segment. For small negative gate-voltages, the InSb segment can be tuned toward p-type conduction, which induces a strong band-to-band tunneling across the heterostructucture junction. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3633742]
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| 3. |
- Borg, Mattias, et al.
(author)
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InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
- 2010
-
In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 10:Online August 24, 2010, s. 4080-4085
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Journal article (peer-reviewed)abstract
- InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and characterized by electrical measurements and transmission electron microscopy. Down-scaling of the insert thickness was limited because of an observed sensitivity of GaSb nanowire growth to the presence of In. By employing growth interrupts in between the InAs and GaInAs growth steps it was possible to reach an insert thickness down to 25 nm. Two-terminal devices show a diode behavior, where temperature-dependent measurements indicate a heterostructure barrier height of 0.5 eV, which is identified as the valence band offset between the InAs and GaSb. Three-terminal transistor structures with a top-gate positioned at the heterointerface show clear indications of band-to-band tunnelling.
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| 4. |
- Ganjipour, Bahram, et al.
(author)
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Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
- 2012
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 101:10
-
Journal article (peer-reviewed)abstract
- We report transport studies of GaSb/InAs core/shell nanowires. It is shown that with increasing InAs shell thickness, it is possible to tune the carrier concentrations and transport in the structures from p-type (core-dominated) to n-type (shell dominated). For nanowires with an intermediate shell thickness (5-7 nm), we show that the transport is ambipolar, such that an applied top-gate potential can provide further control of carrier type and transport path. In this range, the nature of the GaSb-InAs junction also changes from broken gap (semimetal) to staggered (narrow bandgap) with a small decrease in shell thickness. From a device point of view, we demonstrate that the presence of a thin (<3 nm) InAs shell improves p-type GaSb nanowire transistor characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4749283]
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| 5. |
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| 6. |
- Ganjipour, Bahram, et al.
(author)
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High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
- 2011
-
In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 11:10, s. 4222-4226
-
Journal article (peer-reviewed)abstract
- We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm2 at 0.50 V, maximum peak current of 67 kA/cm2 at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.
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| 7. |
- Pettersson, Håkan, et al.
(author)
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Quantum Dots-in-a-Well Infrared Photodetectors-Electronic Structure and Optical Properties
- 2010
-
In: Bulletin of American Physical Society. - : American Physical Society.
-
Conference paper (peer-reviewed)abstract
- Quantum dots-in-a-well (DWELL) infrared photodetectors is a new class of nanophotonic devices with the potential of significantly increasing the performance and reducing the cost of infrared detectors. Here we present a comprehensive study of DWELL photodetector structures using a variety of optical techniques (PL, PLE, and PC). Complementary tunnel capacitance measurements support the electronic structure obtained from the optical measurements. A detailed energy level scheme based on the experimental findings is presented and compared to theoretical modeling. The presented work show the importance of combining different electrical and optical techniques to obtain a consistent model of complicated quantum structures which is crucial for the development of future nanophotonic devices.
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| 8. |
- Svensson, Johannes, et al.
(author)
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Increased absorption in InAsSb nanowire clusters through coupled optical modes
- 2017
-
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 110:8
-
Journal article (peer-reviewed)abstract
- Nanowires can act as efficient light absorbers where waveguide modes are resonant to specific wavelengths. This resonant wavelength can easily be tuned by the nanowire dimensions, but the absorption of infrared radiation requires diameters of hundreds of nm, which is difficult to achieve using epitaxial growth. Here, we demonstrate that infrared absorption in InAsSb nanowires with the diameters of only 140 nm grown on Si substrates can be enhanced resonantly by placing them closely packed in clusters of different sizes. We find that coating the nanowires with a dielectric to optically connect them results in an efficient absorption diameter far exceeding the diameter of the constituent nanowires and that the cut-off wavelength is redshifted with an increasing cluster diameter. Numerical simulations are in agreement with the experimental results and demonstrate that if nanowires are positioned in clusters, a peak absorptance of 20% is possible at 5.6 μm with only 3% surface coverage. This absorptance is 200 times higher than for wires placed in an equidistant pattern. Our findings have direct implications for the design of efficient nanowire based photodetectors and solar cells.
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| 9. |
- Wernersson, Lars-Erik, et al.
(author)
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Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
- 2002
-
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:10, s. 1841-1843
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Journal article (peer-reviewed)abstract
- We have studied GaP/GaAs/GaP and GaAsxP1-x/GaAs/GaAsxP1-x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1-x/GaAs/GaAsxP1-x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5.
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| 10. |
- Aghaeipour, Mahtab, et al.
(author)
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Comparative study of absorption efficiency of inclined and vertical InP nanowires
- 2017
-
In: Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI. - Bellingham, WA : SPIE - International Society for Optical Engineering. - 9781510606401 ; 10099
-
Conference paper (peer-reviewed)abstract
- Geometrically designed III-V nanowire arrays are promising candidates for optoelectronics due to their possibility to excite nanophotonic resonances in absorption spectra. Strong absorption resonances can be obtained by proper tailoring of nanowire diameter, length and pitch. Such enhancement of the light absorption is, however, accompanied by undesired resonance dips at specific wavelengths. In this work, we theoretically show that tilting of the nanowires mitigates the absorption dips by exciting strong Mie resonances. In particular, we derive a theoretical optimum inclination angle of about 30 degrees at which the inclined nanowires gain 8% in absorption efficiency compared to vertically standing nanowires in a spectral region matching the intensity distribution of the sun. The enhancement is due to engineering the excited modes inside the nanowires regarding the symmetry properties of the nanowire/light system without increasing the absorbing material. We expect our results to be important for nanowire-based photovoltaic applications. © 2017 SPIE.
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| 11. |
- Aghaeipour, Mahtab, et al.
(author)
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Considering symmetry properties of inp nanowire/light incidence systems to gain broadband absorption
- 2017
-
In: IEEE Photonics Journal. - Piscataway : IEEE. - 1943-0655. ; 9:3
-
Journal article (peer-reviewed)abstract
- Geometrically designed III-V nanowire arrays are promising candidates for disruptive optoelectronics due to the possibility of obtaining a strongly enhanced absorption resulting from nanophotonic resonance effects. With normally incident light on such vertical nanowire arrays, the absorption spectra exhibit peaks that originate from excitation of HE1m waveguide modes in the constituent nanowires. However, the absorption spectra typically show dips between the absorption peaks. Conventionally, such weak absorption has been counteracted by either making the nanowires longer or by decreasing the pitch of the array, both alternatives effectively increasing the volume of absorbing material in the array. Here, we first study two approaches for compensating the absorption dips by exciting additional Mie resonances: 1) oblique light incidence on vertical InP nanowire arrays and 2) normal light incidence on inclined InP nanowire arrays. We then show that branched nanowires offer a novel route to achieve broadband absorption by taking advantage of simultaneous excitations of Mie resonances in the branches and guided HE1m modes in the stem. Finite element method calculations show that the absorption efficiency is enhanced from 0.72 for vertical nanowires to 0.78 for branched nanowires under normal light incidence. Our work provides new insight for the development of novel efficient photovoltaics with high efficiency and reduced active material volume.
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| 12. |
- Aghaeipour, Mahtab, et al.
(author)
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Optical response of wurtzite and zinc blende GaP nanowire arrays
- 2015
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In: Optics Express. - 1094-4087. ; 23:23, s. 30177-30187
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Journal article (peer-reviewed)abstract
- We compare the optical response of wurtzite and zinc blende GaP nanowire arrays for varying geometry of the nanowires. We measure reflectance spectra of the arrays and extract from these measurements the absorption in the nanowires. To support our experimental findings and to allow for more detailed investigations of the optical response of the nanowire arrays than possible in experiments, we perform electromagnetic modeling. This modeling highlights the validity of the extraction of the absorptance from reflectance spectra, as well as limitations of the extraction due to anti-reflection properties of the nanowires. In our combined experimental and theoretical study, we find for both zinc blende and wurtzite nanowires an absorption resonance that can be tuned into the ultraviolet by decreasing the diameter of the nanowires. This peak stops blue-shifting with decreasing nanowire diameter at a wavelength of approximately 330 nm for zinc blende GaP. In contrast, for the wurtzite GaP nanowires, the resonance continues blue-shifting at 310 nm for the smallest diameters we succeeded in fabricating. We interpret this as a difference in refractive index between wurtzite and zinc blende GaP in this wavelength region. These results open up for optical applications through resonant absorption in the visible and ultraviolet wavelength regions with both zinc blende and wurtzite GaP nanowire arrays. Notably, zinc blende and wurtzite GaP support resonant absorption deeper into the ultraviolet region than previously found for zinc blende and wurtzite InP and InAs. (C) 2015 Optical Society of America
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| 13. |
- Aghaeipour, Mahtab
(author)
-
Tailoring the Optical Response of III-V Nanowire Arrays
- 2017
-
Doctoral thesis (other academic/artistic)abstract
- Semiconductor nanowires show a great deal of promise for applications in a wide range of important fields, including photovoltaics, biomedicine, and information technology. Developing these exciting applications is strongly dependent on understanding the fundamental properties of nanowires, such as their optical resonances and absorption spectra. In this thesis we explore optical absorption spectra of arrays of vertical III-V nanowires with a special emphasis on structures optimized to enhance absorption in the solar spectrum. First, we analyze experimentally determined absorption spectra of both indium phosphide (InP) and gallium phosphide (GaP) nanowire arrays. The study provides an intuitive understanding of how the observed absorption resonances in the nanowires may be tuned as a function of their geometrical parameters and crystal structure. As a consequence, the spectral position of absorption resonances can be precisely controlled through the nanowire diameter. However, the results highlight how the blue-shift in the optical absorption resonances as the diameter of the nanowires decreases comes to a halt at low diameters. The stop point is related to the behavior of the refractive indices of the nanowires. The wavelength of the stop is different for nanowire polytypes of similar dimensions due to differences in their refractive indices. We then present a theoretical argument that it is important to consider symmetry properties when tailoring the optical modes excited in the nanowires for enhanced absorption. We show that absorption spectra may be enhanced compared to vertical nanowires at normal incidence by tilting the nanowires with normal incidence light, or by using off-normal incidence with vertical nanowires. This is because additional optical modes inside the nanowires are excited when the symmetry is broken. Looking forward to omnidirectional applications, we consider branched nanowires as a way to enhance the absorption spectra at normal incidence by taking advantage of simultaneous excitation of the spectrally different optical modes in the branches and the stems. Third, we describe in theoretical terms how integrating distributed Bragg reflectors (DBRs) with the nanowires can improve absorption spectra compared to conventional nanowires. DBRs provide a way to employ light trapping mechanisms which increases the optical path length of the excited modes and thereby improves the absorption of the excited modes. At normal incidence, DBR-nanowires improve the absorption efficiency to 78%, compared to 72% for conventional nanowires. We show that the efficiency is increased to 85% for an off-normal incident angle of 50˚. Overall, our results show that studies of optical resonances in nanowires that take the light-matter interaction into account provide opportunities to develop novel optical and optoelectronic functionalities in nanoscience and nanotechnology.
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| 14. |
- Aghaeipour, Mahtab, et al.
(author)
-
Tunable absorption resonances in the ultraviolet for InP nanowire arrays
- 2014
-
In: Optics Express. - 1094-4087. ; 22:23, s. 29204-29212
-
Journal article (peer-reviewed)abstract
- The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 < lambda < 390 nm. To support this claim, we investigated how resonances in nanostructures can be shifted in wavelength by geometrical tuning. We find that dispersion in the refractive index can dominate over geometrical tuning and stop the possibility for such shifting. Our results open the door for using crystal-phase engineering to optimize the absorption in InP nanowire-based solar cells and photodetectors. (C) 2014 Optical Society of America
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| 15. |
- Anttu, Nicklas, et al.
(author)
-
Crystal Phase-Dependent Nanophotonic Resonances in InAs Nanowire Arrays
- 2014
-
In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 14:10, s. 5650-5655
-
Journal article (peer-reviewed)abstract
- Nanostructures have many material, electronic, and optical properties that are not found in bulk systems and that are relevant for technological applications. For example, nanowires realized from III-V semiconductors can be grown into wurtzite crystal structure. This crystal structure does not naturally exist in bulk where these materials form the zinc-blende counterpart. Being able to concomitantly grow these nanowires in the zinc-blende and/or wurtzite crystal structure prlovides an important degree of control for the design and optimization of optoelectronic applications based on these semiconductor nanostructures. However, the refractive indices of this new crystallographic phase have so far not been elucidated. This shortcoming makes it impossible to predict and utilize he full potential of these new nanostructured materials for optoelectronics applications a careful design and optimization of optical resonances by tuning the nanostrucuted geometry is needed to achieve optimal performance. Here, we report and analyze striking differeences in the optical response of nanophotonic resonances in wurtzite and zinc-blend InAs nanowire arrays. Specifically, through reflectance measurements we find that the resonance can be tuned down to lambda approximate to 380 nm in wurtzite nanowires by decreasing the nanowire diameter. In stark contrast, a similar tuning to below approximate to 500 nm is not possible in the zinc-blende nanowires. Furthermore, we find that the wurtzite nanowires can absorb twice as strongly as the zinc-blende nanowires. We attribute these strikingly large differences in resonant behavior to large differences between the refractive indices of the two crystallographic phases realized in these nanostructures. We anticipate our finding to be relevant for other III-B materials as well as for all material systems that manifest polytypism. Taken together, our results demonstrate crystal phase engineering as a potentially new design dimension for optoelectronics applications.
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| 16. |
- Anttu, Nicklas, et al.
(author)
-
Optical Far-Field Method with Subwavelength Accuracy for the Determination of Nanostructure Dimensions in Large-Area Samples.
- 2013
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In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 13:6, s. 2662-2667
-
Journal article (peer-reviewed)abstract
- The physical, chemical, and biological properties of nanostructures depend strongly on their geometrical dimensions. Here we present a fast, noninvasive, simple-to-perform, purely optical method that is capable of characterizing nanostructure dimensions over large areas with an accuracy comparable to that of scanning electron microscopy. This far-field method is based on the analysis of unique fingerprints in experimentally measured reflectance spectra using full three-dimensional optical modeling. We demonstrate the strength of our method on large-area (millimeter-sized) arrays of vertical InP nanowires, for which we simultaneously determine the diameter and length as well as cross-sample morphological variations thereof. Explicitly, the diameter is determined with an accuracy better than 10 nm and the length with an accuracy better than 30 nm. The method is versatile and robust, and we believe that it will provide a powerful and standardized measurement technique for large-area nanostructure arrays suitable for both research and industrial applications.
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| 17. |
- Anttu, Nicklas, et al.
(author)
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Reflection measurements to reveal the absorption in nanowire arrays
- 2013
-
In: Optics Letters. - 0146-9592. ; 38:9, s. 1449-1451
-
Journal article (peer-reviewed)abstract
- The absorption of light is at the core of photovoltaic applications. For many nanostructure-based devices, an assessment of the absorption in the nanostructures is complicated by a thick, opaque substrate that prohibits transmission measurements. Here, we show how a single reflection measurement can be used for approximating the amount of light absorbed in vertical semiconductor nanowire arrays. (C) 2013 Optical Society of America
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| 18. |
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| 19. |
- Berg, Alexander, et al.
(author)
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Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
- 2014
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In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 386, s. 47-51
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Journal article (peer-reviewed)abstract
- We report on the synthesis of non-tapered wurtzite (WZ) GaP nanowires by use of in-situ etching and the structural and optical characterization thereof. HCl was evaluated as an in-situ etchant in order to impede the onset of radial growth since the WZ crystal phase in GaP nanowires preferentially grows at relatively high growth temperatures around 600 degrees C, at which strong radial growth typically occurs. Transmission electron microscopy measurements confirmed non-tapered WZ GaP nanowires after growth. Photoluminescence characterization revealed defect related red emission, possibly related to transitions within the bandgap. Raman measurements show that the phonon energies in WZ GaP are very close in energy to the phonon energies in zinc blende GaP. (C) 2013 Elsevier B.V. All rights reserved.
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| 20. |
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| 21. |
- Berg, Alexander, et al.
(author)
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Growth of wurtzite AlxGa1-xP nanowire shells and characterization by Raman spectroscopy
- 2017
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In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 28:3
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Journal article (peer-reviewed)abstract
- The phonon energies of AlGaP in wurtzite crystal structure are generally not known, as opposed to their zincblende counterparts, because AlGaP crystallizes in zincblende phase in bulk and thin films structures. However, in nanowires AlGaP can be grown in wurtzite crystal structure. In this work we have grown wurtzite GaP/AlGaP/GaP core-shell nanowires by use of MOVPE. After developing suitable growth conditions, the Al composition was determined by STEM-EDX measurements and the wurtzite AlGaP phonon energies by Raman spectroscopy. Raman measurements show a peak shift with increasing Al composition in the AlGaP shell. We find that the phonon energies for wurtzite AlGaP are slightly lower than for zincblende AlGaP. Our results can be used to determine the Al composition in wurtzite AlGaP by Raman scattering.
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| 22. |
- Berg, Alexander, et al.
(author)
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In situ etching for control over axial and radial III-V nanowire growth rates using HBr.
- 2014
-
In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:50
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Journal article (peer-reviewed)abstract
- We report on the influence of hydrogen bromide (HBr) in situ etching on the growth of InP, GaP and GaAs nanowires. We find that HBr can be used to impede undesired radial growth during axial growth for all three material systems. The use of HBr opens a window for optimizing the growth parameters with respect to the materials' quality rather than only their morphology. Transmission electron microscopy (TEM) characterization reveals a partial transition from a wurtzite crystal structure to a zincblende upon the use of HBr during growth. For InP, defect-related luminescence due to parasitic radial growth is removed by use of HBr. For GaP, the etching with HBr reduced the defect-related luminescence, but no change in peak emission energy was observed. For GaAs, the HBr etching resulted in a shift to lower photon emission energies due to a shift in the crystal structure, which reduced the wurtzite segments.
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| 23. |
- Bolinsson, Jessica, et al.
(author)
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GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence
- 2014
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In: Nano Reseach. - : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 7:4, s. 473-490
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Journal article (peer-reviewed)abstract
- In this report we explore the structural and optical properties of GaAs/AlGaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-temperature cathodoluminescence (CL) in a scanning electron microscope (SEM). We perform a systematic investigation of how the nanowire growth-temperature affects the total photon emission, and variations in the emission energy and intensity along the length of the nanowires. The morphology and crystal structures of the nanowires were investigated using SEM and transmission electron microscopy (TEM). In order to correlate specific photon emission characteristics with variations in the nanowire crystal structure directly, TEM and spatially resolved CL measurements were performed on the same individual nanowires. We found that the main emission energy was located at around 1.48 eV, and that the emission intensity was greatly enhanced when increasing the GaAs nanowire core growth temperature. The data strongly suggests that this emission energy is related to rotational twins in the GaAs nanowire core. Our measurements also show that radial overgrowth by GaAs on the GaAs nanowire core can have a deteriorating effect on the optical quality of the nanowires. Finally, we conclude that an in situ pre-growth annealing step at a sufficiently high temperature significantly improves the optical quality of the nanowires.
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| 24. |
- Borgström, Magnus, et al.
(author)
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Fabrication and characterization of AlP-GaP core-shell nanowires
- 2011
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In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 324:1, s. 290-295
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Journal article (peer-reviewed)abstract
- We report on the particle assisted synthesis of core-shell AlP-GaP nanowires by use of metal-organic vapor phase epitaxy. The core-shell approach is chosen such as to stabilize the AlP which is highly sensitive to water. The nanowires were investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. These nanowires have an indirect band-gap and form a type II staggered heterojunction. By designed capping of the AlP cores by GaP, we find the nanowires to be stable for more than a year. (C) 2011 Elsevier B.V. All rights reserved.
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| 25. |
- Chen, Jianing, et al.
(author)
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Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy.
- 2010
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In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 10:4, s. 1280-1286
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Journal article (peer-reviewed)abstract
- We present a noninvasive optical method to determine the local strain in individual semiconductor nanowires. InP nanowires were intentionally bent with an atomic force microscope and variations in the optical phonon frequency along the wires were mapped using Raman spectroscopy. Sections of the nanowires with a high curvature showed significantly broadened phonon lines. These observations together with deformation potential theory show that compressive and tensile strain inside the nanowires is the physical origin of the observed phonon energy variations.
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