| 1. |
- Ahvenniemi, Esko, et al.
(author)
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Recommended reading list of early publications on atomic layer deposition-Outcome of the "Virtual Project on the History of ALD"
- 2017
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In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 35:1
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Research review (peer-reviewed)abstract
- Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.
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| 2. |
- Anctil, Annick, et al.
(author)
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Status report on emerging photovoltaics
- 2023
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In: JOURNAL OF PHOTONICS FOR ENERGY. - : SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS. - 1947-7988. ; 13:4
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Journal article (peer-reviewed)abstract
- This report provides a snapshot of emerging photovoltaic (PV) technologies. It consists of concise contributions from experts in a wide range of fields including silicon, thin film, III-V, perovskite, organic, and dye-sensitized PVs. Strategies for exceeding the detailed balance limit and for light managing are presented, followed by a section detailing key applications and commercialization pathways. A section on sustainability then discusses the need for minimization of the environmental footprint in PV manufacturing and recycling. The report concludes with a perspective based on broad survey questions presented to the contributing authors regarding the needs and future evolution of PV.(c) 2023 Society of Photo-Optical Instrumentation Engineers (SPIE)
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| 4. |
- Boulfrad, Yacine, et al.
(author)
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Reduction of Light-induced Degradation of Boron-doped Solar-grade Czochralski Silicon by Corona Charging
- 2013
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In: Energy Procedia. - : Elsevier. - 1876-6102. ; 38, s. 531-535
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Journal article (peer-reviewed)abstract
- Abstract This study aims at the reduction of light-induced degradation of boron-doped solar-grade Czochralski silicon wafers by corona charging. The method consists of deposition of negative charges on both surface sides of wafer and keeping the wafer in dark for 24 hours to allow the diffusion of positively-charged interstitial copper towards the surfaces. This method proves to be useful to reduce or eliminate light-induced degradation caused by copper. The degradation was significantly reduced in both intentionally (copper-contaminated) and “clean†samples. The amount of the negative charge was found to be proportional to the reduction strength
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| 5. |
- Haarahiltunen, Antti, et al.
(author)
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Gettering of iron in CZ-silicon by polysilicon layer
- 2011
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In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley-VCH Verlagsgesellschaft. - 1610-1634 .- 1610-1642. ; 8:3, s. 751-754
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Journal article (peer-reviewed)
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| 6. |
- Hamed, Tareq Abu, et al.
(author)
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Multiscale in modelling and validation for solar photovoltaics
- 2018
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In: EPJ Photovoltaics. - : EDP Sciences. - 2105-0716. ; 9
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Journal article (peer-reviewed)abstract
- Photovoltaics is amongst the most important technologies for renewable energy sources, and plays a key role in the development of a society with a smaller environmental footprint. Key parameters for solar cells are their energy conversion efficiency, their operating lifetime, and the cost of the energy obtained from a photovoltaic system compared to other sources. The optimization of these aspects involves the exploitation of new materials and development of novel solar cell concepts and designs. Both theoretical modeling and characterization of such devices require a comprehensive view including all scales from the atomic to the macroscopic and industrial scale. The different length scales of the electronic and optical degrees of freedoms specifically lead to an intrinsic need for multiscale simulation, which is accentuated in many advanced photovoltaics concepts including nanostructured regions. Therefore, multiscale modeling has found particular interest in the photovoltaics community, as a tool to advance the field beyond its current limits. In this article, we review the field of multiscale techniques applied to photovoltaics, and we discuss opportunities and remaining challenges.
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| 7. |
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| 8. |
- Inglese, Alessandro, et al.
(author)
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Light-induced degradation in multicrystalline silicon: the role of copper
- 2016
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In: PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2016). - : Elsevier. ; , s. 808-814
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Conference paper (peer-reviewed)abstract
- In this contribution, we provide an insight into the light-induced degradation of multicrystalline (mc-) silicon caused by copper contamination. Particularly we analyze the degradation kinetics of intentionally contaminated B- and Ga-doped mc-Si through spatially resolved photoluminescence (PL) imaging. Our results show that even small copper concentrations are capable of causing a strong LID effect in both B- and Ga-doped samples. Furthermore, the light intensity, the dopant and the grain quality were found to strongly impact the degradation kinetics, since faster LID was observed with stronger illumination intensity, B-doping and in the grains featuring low initial lifetime. Interestingly after degradation we also observe the formation of bright denuded zones near the edges of the B-doped grains, which might indicate the possible accumulation of copper impurities at the grain boundaries.
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| 13. |
- Lindroos, Jeanette, 1983-, et al.
(author)
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Nickel : A very fast diffuser in silicon
- 2013
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In: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 113:20
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Journal article (peer-reviewed)
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| 14. |
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| 15. |
- Lindroos, Jeanette, et al.
(author)
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Review of light-induced degradation in crystalline silicon solar cells
- 2016
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In: Solar Energy Materials and Solar Cells. - : Elsevier BV. - 0927-0248 .- 1879-3398. ; 147, s. 115-126
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Research review (peer-reviewed)abstract
- Although several advances have been made in the characterization and the mitigation of light-induced degradation (LID), industrial silicon solar cells still suffer from different types of light-induced efficiency losses. This review compiles four decades of LID results in both electronic- and solar-grade crystalline silicon. The review focuses on the properties and the defect models of boron-oxygen LID and copper-related LID. Current techniques for LID mitigation are presented in order to reduce cell degradation and separate copper-related LID from boron-oxygen LID. Finally, the review summarizes recent observations of severe LID in modern multicrystalline silicon solar cells.
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| 16. |
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| 17. |
- Vähänissi, Ville, et al.
(author)
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Physical mechanisms of boron diffusion gettering of iron in silicon
- 2010
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In: Physica Status Solidi. Rapid Research Letters. - : Wiley-VCH Verlagsgesellschaft. - 1862-6254 .- 1862-6270. ; 4:5-6, s. 136-138
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Journal article (peer-reviewed)abstract
- We have studied the boron diffusion gettering (BDG) of iron in single crystalline silicon. The results show that iron is gettered efficiently by electrically inactive boron, which leads to gettering efficiencies comparable to phosphorus diffusion gettering (PDG). In addition we discuss the different physical mechanisms behind BDG. We also consider the possibilities of using boron diffusion gettering in solar cell fabrication and discuss the role of boron and iron concentration in the optimization of gettering efficiency.
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