| 1. |
- Hammar, Arvid, 1986, et al.
(author)
-
Low noise 874 GHz receivers for the international submillimetre airborne radiometer (ISMAR)
- 2018
-
In: Review of Scientific Instruments. - : AIP Publishing. - 1089-7623 .- 0034-6748. ; 89:5
-
Journal article (peer-reviewed)abstract
- We report on the development of two 874 GHz receiver channels with orthogonal polarizations for the international submillimetre airborne radiometer. A spline horn antenna and dielectric lens, a Schottky diode mixer circuit, and an intermediate frequency (IF) low noise amplifier circuit were integrated in the same metallic split block housing. This resulted in a receiver mean double sideband (DSB) noise temperature of 3300 K (minimum 2770 K, maximum 3400 K), achieved at an operation temperature of 40 C and across a 10 GHz wide IF band. A minimum DSB noise temperature of 2260 K at 20 C was measured without the lens. Three different dielectric lens materials were tested and compared with respect to the radiation pattern and noise temperature. All three lenses were compliant in terms of radiation pattern, but one of the materials leads to a reduction in a noise temperature of approximately 200 K compared to the others. The loss in this lens was estimated to be 0.42 dB. The local oscillator chains have a power consumption of 24W and consist of custom-designed Schottky diode quadruplers (5% power efficiency in operation, 8%-9% peak), commercial heterostructure barrier varactor (HBV) triplers, and power amplifiers that are pumped by using a common dielectric resonator oscillator at 36.43 GHz. Measurements of the radiation pattern showed a symmetric main beam lobe with full width half maximum <5 and side lobe levels below 20 dB. The return loss of a prototype of the spline horn and lens was measured using a network analyzer and frequency extenders to be 750-1100 GHz. Time-domain analysis of the reflection coefficients shows that the reflections are below 25 dB and are dominated by the external waveguide interface.
|
|
| 2. |
|
|
| 3. |
- Sobis, Peter, 1978, et al.
(author)
-
SWI 1200/600 GHz highly integrated receiver front-ends
- 2015
-
In: 36th ESA Antenna Workshop on Antennas and RF Systems for Space Science, ESA/ESTEC ,Noordwijk, The Netherlands; 6-9 Oct. 2015. ; session S3.1.2
-
Conference paper (peer-reviewed)
|
|
| 4. |
- Anderberg, Martin, 1992, et al.
(author)
-
A 183-GHz Schottky diode receiver with 4 dB noise figure
- 2019
-
In: IEEE MTT-S International Microwave Symposium Digest. - : IEEE. - 0149-645X. ; 2019-June, s. 172-175
-
Conference paper (peer-reviewed)abstract
- Atmospheric science based on space-borne millimeter wave measurements require reliable and state-of-the art receivers. In particular, the water vapor line at 183.3 GHz motivates the development of sensitive mixers at this frequency. Traditional assembly techniques employed in the production of Schottky diode receivers involve flip-chip mounting and soldering of discrete dies, which prohibit the implementation of reliable and repeatable production processes. In this work, we present a subharmonic 183 GHz mixer implementing a repeatable assembly method using beamlead Schottky diodes. The mixer was integrated with a InP HEMT MMIC low noise intermediate frequency amplifier resulting in a record-low receiver noise temperature of 450 K at 1 mW of local oscillator power measured at room-temperature. The measured Allan time was 10 s and the third order local oscillator spurious power was less than -60 dBm. The proposed assembly method is of particular importance for space-borne missions but also applicable to a wide range of terahertz applications.
|
|
| 5. |
- Cha, Eunjung, 1985, et al.
(author)
-
0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers
- 2018
-
In: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 66:11, s. 4860-4869
-
Journal article (peer-reviewed)abstract
- We present two monolithic microwave integrated circuit (MMIC) cryogenic broadband low-noise amplifiers (LNAs) based on the 100 nm gate length InP high-electron mobility transistor technology for the frequency range of 0.3-14 and 16-28 GHz. The 0.3-14 GHz three-stage LNA exhibited a gain of 41.6 ± 1.4 dB and an average noise temperature of 3.5 K with a minimum noise temperature of 2.2 K at 6 GHz when cooled down to 4 K. The 16-28 GHz three-stage LNA showed a gain of 32.3 ± 1.8 dB and an average noise temperature of 6.3 K with a minimum noise temperature of 4.8 K at 20.8 GHz at the ambient temperature of 4 K. This is the first demonstration of cryogenic MMIC LNA covering the whole K-band. To the best of the authors' knowledge, the cryogenic MMIC LNAs demonstrated the state-of-the-art noise performance in the 0.3-14 and 16-28 GHz frequency range.
|
|
| 6. |
- Cha, Eunjung, 1985, et al.
(author)
-
Cryogenic low-noise InP HEMTs: A source-drain distance study
- 2016
-
In: 2016 Compound Semiconductor Week, CSW 2016. - 9781509019649 ; , s. Article number 7528576-
-
Conference paper (peer-reviewed)abstract
- The scaling effect of the source-drain distance was investigated in order to improve the performance of low-noise InP HEMTs at cryogenic temperatures 4-15 K. The highest dc transconductance at an operating temperature of 4.8 K and low bias power was achieved at a source-drain distance of 1.4 mu m. The extracted HEMT minimum noise temperature was 0.9 K at 5.8 GHz for a 3-stage 4-8 GHz hybrid low-noise amplifier at 10 K.
|
|
| 7. |
- Emrich, Christina, et al.
(author)
-
Low Power Cryogenic Rad-hard LNAs for Space
- 2019
-
Conference paper (peer-reviewed)abstract
- We present the design and implementation of a packaged cryogenic InP HEMT MMIC LNA for space borne applications. The particular module is part of the submillimetre wave instrument (SWI) band1 and band2 receiver channel development for the ESA Jupiter ICy moons Explorer mission (JUICE) programme. The main objective of the activity has been to develop a general connectorized rad-hard LNA package for space applications, and to qualify the cryogenic InP HEMT MMIC process at Chalmers University of Tehnology which today covers a frequency range up to the W-band with state-of-the-art performance in terms of noise, gain and power dissipation. The activity has currently moved from a pre-qualification phase to a lot acceptance test (LAT) phase and has up till now included various environmental tests e.g. vibration, total dose radiation tests up to 300kRad on die level, and thermal cycling both to hot and cold temperatures. The InP HEMT MMIC process can be operated at ultra low power with ultra low noise which makes it an excellent candidate for deep space missions and satellite communication links, but also for the next generation of radioastronomy telescopes based on cryogenic receivers e.g. HEB and SIS multipixel cameras.
|
|
| 8. |
- Harrysson Rodrigues, Isabel, 1993, et al.
(author)
-
Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field
- 2019
-
In: IIS UTokyo SYMPOSIUM No.100.
-
Conference paper (peer-reviewed)abstract
- This work addresses the angular dependence of DC properties in 100nm InP HEMT devices under the influence of applied static magnetic field at 2 K. When kept at an angle 90o towards a magnetic field of 14 T, the maximum output drain current Ids was reduced more than 99 %. A rotation sweep of the transistor revealed a strong angular and B-field dependence on Ids. This was correlated with a reduction in dc transconductance and increase in on-resistance of the transistor. The RF properties of the transistor were tested by measuring an 0.3-14 GHz InP HEMT MMIC low-noise amplifier (LNA) at 2 K kept at an angle 90o towards a magnetic field up to 10 T. The gain and noise temperature were strongly decreased and increased, respectively, already below 1 T. The results show that precise alignment of the cryogenic InP HEMT LNA is crucial in a magnetic field. Even a slight mis-orientation of a few degrees leads to a strong degradation of the gain and noise temperature.
|
|
| 9. |
|
|
| 10. |
|
|
| 11. |
- Harrysson Rodrigues, Isabel, 1993, et al.
(author)
-
On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field
- 2019
-
In: AIP Advances. - : AIP Publishing. - 2158-3226 .- 2158-3226. ; 9:8
-
Journal article (peer-reviewed)abstract
- The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We have investigated the angular dependence of the InP HEMT when oriented in a magnetic field at 2 K ambient temperature up to 14 T. A sharp angular dependence as a function of the magnetic field was measured for the output current of the InP HEMT. This was accurately described by a geometrical magnetoresistance expression for all angles and magnetic field strengths. Key device parameters such as transconductance and on-resistance were significantly affected at small angles and magnetic fields. The strong angular dependence of the InP HEMT output current in a magnetic field has important implications for the alignment of cryogenic LNAs in microwave detection experiments involving magnetic fields. This work was performed in GigaHertz Centre in a joint research project between Chalmers University of Technology, Low Noise Factory AB, Wasa Millimeter Wave AB, Omnisys Instruments AB and RISE Research Institutes of Sweden. We are grateful to Serguei Cherednichenko for valuable assistance in the noise measurements and Niklas Wadefalk for the LNA design.
|
|
| 12. |
|
|
| 13. |
- McCulloch, M. A., et al.
(author)
-
Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers
- 2017
-
In: Journal of Astronomical Telescopes, Instruments, and Systems. - : SPIE-Intl Soc Optical Eng. - 2329-4221 .- 2329-4124. ; 3:1
-
Journal article (peer-reviewed)abstract
- We present the results of noise-temperature measurements for four radio astronomy MMIC low-noise amplifiers (LNAs) at physical temperatures from 2 to 160 K. We observe and confirm recent reports that the noise temperature of an LNA exhibits a quadratic dependence with respect to the physical temperature. We are also able to confirm the prediction by Pospieszalski that below a certain physical temperature there is no further significant reduction in noise temperature. We then discuss these results in the context of both the Pospieszalski noise model and some recent Monte-Carlo simulations, which have implied that at very low temperatures, heating of the electron channel above ambient temperature may help to explain the behavior of the drain temperature parameter.
|
|
| 14. |
- Nilsson, Per-Åke, 1964, et al.
(author)
-
An InP MMIC process optimized for low noise at Cryo
- 2014
-
In: Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. - 1550-8781. - 9781479936229
-
Conference paper (peer-reviewed)abstract
- An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state of the art in this frequency range, and 66.3 K at 300K. Associated gain was 35.9 dB (10K) and 33.2 dB (300 K). The standard deviation at room temperature for 47 LNAs was 1.5 K for the noise and 0.3 dB for the gain.
|
|
| 15. |
- Nilsson, Per-Åke, 1964, et al.
(author)
-
Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process
- 2016
-
In: Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. ; 1, s. Art. no. 7411746-
-
Conference paper (peer-reviewed)abstract
- An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogenic temperatures. The process was run on 4” wafers and utilized 130 nm gate-length HEMTs. Several wide band LNAs were made in a frequency range between 1 GHz and 100 GHz. A Ka band LNA had a minimum noise temperature of 10 K and a gain of 35 dB.
|
|
| 16. |
- Nilsson, Per-Åke, 1964, et al.
(author)
-
Influence of gate-channel distance in low-noise InP HEMTs
- 2013
-
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467361309
-
Conference paper (peer-reviewed)abstract
- The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 mu A/mm to 7 mu A/mm at -1 V gate bias.
|
|
| 17. |
- Rodilla, Helena, 1982, et al.
(author)
-
Cryogenic Kink Effect in InP pHEMTs: A Pulsed Measurements Study
- 2015
-
In: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 62:2, s. 532-537
-
Journal article (peer-reviewed)abstract
- We present a study based on pulsed measurement results of the kink effect observed on the I-V output characteristics in InGaAs/InAlAs/InP pseudomorphic high-electron mobility transistors (InP pHEMTs) at cryogenic temperatures. Pulsed measurements were performed at 300 and $10$ K. Gate and drain lags were observed at both temperatures with a strong increase upon cooling for the drain lag. To study the influence of surface traps in the kink, pulsed measurements of devices passivated by either atomic layer deposited Al²O³ or plasma enhanced chemical vapor deposited Si³N⁴ were compared with no significant differences at 10 K. The influence on the kink effect from the buffer was studied by comparing pulsed measurement data from an InP pHEMT with measurements on a GaAs metamorphic HEMT (GaAs mHEMT). For the GaAs mHEMT, an increase of the drain lag at 10 K was observed when compared with the InP pHEMT. Contrary to the InP HEMT, for the GaAs mHEMT the 0.1 μs pulses were short enough to eliminate the kink when using a quiescent point with VDS = 0. The quality of the pinchoff was sensitive to pulse length and quiescent point for the InP pHEMT but not for the GaAs mHEMT.
|
|
| 18. |
- Rodilla, Helena, 1982, et al.
(author)
-
Cryogenic Performance of Low-Noise InP HEMTs: a Monte Carlo Study
- 2013
-
In: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 60:5, s. 1625-1631
-
Journal article (peer-reviewed)abstract
- In this paper, we present a study of the cryogenic performance of InP high electron mobility transistors (HEMTs) in the low-noise region by means of Monte Carlo simulations. A decrease of the contact resistances and an increase in the electron velocity in the channel together with enhanced channel electron confinement upon cooling of the device are observed, and considered to be the reason for the excellent low-noise behavior of cryogenic InP HEMTs. These findings are supported by a good agreement between simulated and experimental DC, RF, and noise figure data of a 130-nm gate length InP HEMT at 300 and 77 K. An increase of the transconductance g(m) and gate-to-source capacitance C-gs is observed when cooling from 300 to 77 K as a consequence of electron velocity increase and improved channel confinement.
|
|
| 19. |
- Rodilla, Helena, 1982, et al.
(author)
-
Optimized InP HEMTs for low noise at cryogenic temperatures
- 2012
-
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467317252 ; , s. 241-244
-
Conference paper (peer-reviewed)abstract
- Experimental results and Monte Carlosimulations have been analyzed and compared at 300 K and 77 K for 130 nm gate-length InP HEMTs optimized for cryogenic 4-8 GHz low-noise amplifiers. The good agreement observed between simulations and experimental data for DC and small signal equivalent circuit parameters validates the simulation model. Compared to 300 K, an increase of 17% in the simulated mean electron velocity under the gate was observed at low drain current (100 mA/mm) when operating the device at 77 K. In addition, a better electron confinement in the channel was noted. The observations are consistent with an increase of the slope of the transconductance versus gate bias with reduced temperature. The high transconductance at low drain current is crucial for low noise operation of the InP HEMT at low temperature.
|
|
| 20. |
- Schleeh, Joel, 1986, et al.
(author)
-
10 K Room Temperature LNA for SKA Band 1
- 2016
-
In: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781509006984 ; 2016 - August, s. Art no 7540344-
-
Conference paper (peer-reviewed)abstract
- A room temperature LNA suitable for Square Kilometer Array band 1 (0.35–1.05 GHz) has been designed, fabricated and tested. The design is based on InP HEMTs, and focused on minimizing losses in the input matching network. Noise measurement methods in two different labs were used to confirm the 10 K noise temperature of the LNA. The gain wasflat at 50 dB and the input and output return loss better than 10 dB in most of the band.
|
|
| 21. |
- Schleeh, Joel, 1986, et al.
(author)
-
Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs
- 2013
-
In: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 60:1, s. 206-212
-
Journal article (peer-reviewed)abstract
- Detailed S-parameter and noise characterization and modeling of ultralow-noise InP/InAlAs/InGaAs high-electron mobility transistors (InP HEMTs) optimized for operation at 10 K are presented. At the optimum low-noise bias at 10 K, the InP HEMT exhibited a 60% improvement in cutoff frequency f(T) and a 100% improvement in dc transconductance g(m) compared with 300 K. A small-signal noise model was evaluated at different bias conditions at 10 and 300 K. The bias dependence of the minimum noise temperature at low-noise operation was modeled at 10 K. The temperature dependence of the threshold voltage V-T,V- gm, and gate-source and gate-drain capacitances C-gs and C-gd indicated that the excellent cryogenic noise performance of optimized InP HEMTs is due to a higher degree of confinement in the carrier concentration closest to the gate at 10 K compared with 300 K. As a result, a fast depletion of the HEMT channel with respect to drain current I-d occurs under cryogenic operation.
|
|
| 22. |
- Schleeh, Joel, 1986, et al.
(author)
-
Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature
- 2012
-
In: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
-
Conference paper (peer-reviewed)abstract
- A 0.5-13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP HEMT process. A packaged LNA has been measured at both 300 K and 15 K. At 300 K the measured minimum noise temperature was 48 K at 7 GHz. At 15 K the measured minimum noise temperature was 3 K at 7 GHz and below 7 K within the entire 0.5-13 GHz band. The gain was between 34 dB and 40 dB at 300 K and between 38 dB and 44 dB at 4 K.
|
|
| 23. |
- Schleeh, Joel, 1986, et al.
(author)
-
Cryogenic Broadband Ultra-Low-Noise MMIC LNAs for Radio Astronomy Applications
- 2013
-
In: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 61:2, s. 871-877
-
Journal article (peer-reviewed)abstract
- 0.5–13 and 24–40 GHz broadband cryogenic monolithic-microwave integrated-circuit low-noise amplifiers (LNAs)have been designed and fabricated using a 130-nm InP HEMTprocess. Packaged LNAs have been measured at both 300 and15 K. At 300 K, the measured minimum noise temperature ofthe 0.5–13-GHz LNA was 48 K at 7 GHz with a gain between34–40 dB. At 15 K, the measured minimum noise temperature was 3 K at 7 GHz and below 7 K within the entire 0.5–13-GHz band with a gain between 38–44 dB. The 24–40-GHz LNA exhibited a lowest noise temperature of 110 K and an average of 125 K with again of more than 27.5 dB at 300 K. When cooled down to 15 K,the noise temperature dropped to a minimum of 10 K and average of 13.2 K with a gain of 28 dB. The results are of large interest for radio astronomy applications where large bandwidth and low noise figure in the receivers are key figures in the system design.
|
|
| 24. |
- Schleeh, Joel, 1986, et al.
(author)
-
Cryogenic LNAs for SKA band 2 to 5
- 2017
-
In: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781509063604 ; , s. 164-167
-
Conference paper (peer-reviewed)abstract
- Four ultra-low noise cryogenic MMIC LNAs suitable for the Square Kilometer Array (SKA) band 2 to 5 (0.95-13.8 GHz) have been designed, fabricated, packaged and tested. The LNAs are based on 4×50, 8×50 and 16×50 μm HEMTs, designed for stable cryogenic operation, allowing the combination of good noise performance and return loss. The lowest noise temperatures measured in the four bands were 1.0 K, 1.2 K, 1.6 K and 2.6 K, respectively.
|
|
| 25. |
- Schleeh, Joel, 1986, et al.
(author)
-
Cryogenic noise performance of InGAAs/InAlAs HEMTs grown on InP and GaAs substrate
- 2014
-
In: Solid-State Electronics. - : Elsevier BV. - 0038-1101. ; 91, s. 74-77
-
Journal article (peer-reviewed)abstract
- We present a comparative study of InGaAs/InAlAs high electron mobility transistors (HEMTs), intended for cryogenic ultra-low noise amplifiers (LNAs) and fabricated on different substrate and buffer technologies. The first was pseudomorphically grown on InP (InP pHEMT) while the second was grown on a linearly graded metamorphic InAlAs buffer on top of a GaAs substrate (GaAs mHEMT). Both HEMTs had identical active epitaxial regions. When integrated in a 4–8 GHz 3-stage LNA at 300 K, the measured average noise temperature was 45 K for the InP pHEMT and 49 K (9% higher) for the GaAs mHEMT. When cooled down to 10 K, the InP pHEMT LNA was improved to 1.7 K whereas the GaAs mHEMT LNA was only reduced to 4 K (135% higher). The observed superior cryogenic noise performance of the HEMTs grown on InP is believed to be due to a higher carrier confinement within the channel. Microscopy analysis suggested this was related to defects from the metamorphic buffer of the GaAs mHEMT.
|
|
