| 1. |
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| 2. |
- Hibar, D. P., et al.
(author)
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Cortical abnormalities in bipolar disorder: An MRI analysis of 6503 individuals from the ENIGMA Bipolar Disorder Working Group
- 2018
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In: Molecular Psychiatry. - : Springer Science and Business Media LLC. - 1359-4184 .- 1476-5578. ; 23:4, s. 932-942
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Journal article (peer-reviewed)abstract
- Despite decades of research, the pathophysiology of bipolar disorder (BD) is still not well understood. Structural brain differences have been associated with BD, but results from neuroimaging studies have been inconsistent. To address this, we performed the largest study to date of cortical gray matter thickness and surface area measures from brain magnetic resonance imaging scans of 6503 individuals including 1837 unrelated adults with BD and 2582 unrelated healthy controls for group differences while also examining the effects of commonly prescribed medications, age of illness onset, history of psychosis, mood state, age and sex differences on cortical regions. In BD, cortical gray matter was thinner in frontal, temporal and parietal regions of both brain hemispheres. BD had the strongest effects on left pars opercularis (Cohen's d='0.293; P=1.71 × 10 '21), left fusiform gyrus (d='0.288; P=8.25 × 10 '21) and left rostral middle frontal cortex (d='0.276; P=2.99 × 10 '19). Longer duration of illness (after accounting for age at the time of scanning) was associated with reduced cortical thickness in frontal, medial parietal and occipital regions. We found that several commonly prescribed medications, including lithium, antiepileptic and antipsychotic treatment showed significant associations with cortical thickness and surface area, even after accounting for patients who received multiple medications. We found evidence of reduced cortical surface area associated with a history of psychosis but no associations with mood state at the time of scanning. Our analysis revealed previously undetected associations and provides an extensive analysis of potential confounding variables in neuroimaging studies of BD. © 2018 Macmillan Publishers Limited, part of Springer Nature. All rights reserved.
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| 3. |
- Aprojanz, J., et al.
(author)
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High-Mobility Epitaxial Graphene on Ge/Si(100) Substrates
- 2020
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In: ACS applied materials & interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 12:38, s. 43065-43072
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Journal article (peer-reviewed)abstract
- Graphene was shown to reveal intriguing properties of its relativistic two-dimensional electron gas; however, its implementation to microelectronic applications is missing to date. In this work, we present a comprehensive study of epitaxial graphene on technologically relevant and in a standard CMOS process achievable Ge(100) epilayers grown on Si(100) substrates. Crystalline graphene monolayer structures were grown by means of chemical vapor deposition (CVD). Using angle-resolved photoemission spectroscopy and in situ surface transport measurements, we demonstrate their metallic character both in momentum and real space. Despite numerous crystalline imperfections, e.g., grain boundaries and strong corrugation, as compared to epitaxial graphene on SiC(0001), charge carrier mobilities of 1 × 104 cm2/Vs were obtained at room temperature, which is a result of the quasi-charge neutrality within the graphene monolayers on germanium and not dependent on the presence of an interface oxide. The interface roughness due to the facet structure of the Ge(100) epilayer, formed during the CVD growth of graphene, can be reduced via subsequent in situ annealing up to 850 °C coming along with an increase in the mobility by 30%. The formation of a Ge(100)-(2 × 1) structure demonstrates the weak interaction and effective delamination of graphene from the Ge/Si(100) substrate.
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| 4. |
- Baringhaus, J., et al.
(author)
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Bipolar gating of epitaxial graphene by intercalation of Ge
- 2014
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 104:26
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Journal article (peer-reviewed)abstract
- In this study, the ambivalent behavior of Ge intercalation is studied by means of scanning tunneling microscopy and spectroscopy as well as local 4-point probe transport measurements. In quantitative agreement with angle-resolved photoemission experiments, both p-and n-type doped graphene areas and their doping level were identified by local spectroscopy. The p-doped areas appear higher by 2 angstrom with respect to the n-doped areas suggesting incorporation of thicker Ge-layers accompanied by a modified coupling to the initial SiC-surface. Furthermore, the sheet resistance was measured on each of the patches separately. The intrinsic imbalance between the carrier types in the different areas is well reflected by the transport study. The process of intercalation does not affect the transport properties in comparison to pristine graphene pointing to a sufficient homogeneity of the decoupled graphene layer. Transport measurements across chemically gated pn-junctions reveal increased resistances, possibly due to enlarged tunneling barriers. (C) 2014 AIP Publishing LLC.
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| 5. |
- Bergeron, S, et al.
(author)
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Vulvodynia
- 2020
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In: Nature reviews. Disease primers. - : Springer Science and Business Media LLC. - 2056-676X. ; 6:1, s. 36-
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Journal article (peer-reviewed)
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| 6. |
- Coletti, C., et al.
(author)
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Large area quasi-free standing monolayer graphene on 3C-SiC(111)
- 2011
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 99:8
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Journal article (peer-reviewed)abstract
- Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674]
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| 7. |
- Coletti, C., et al.
(author)
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Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
- 2013
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In: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 88:15
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Journal article (peer-reviewed)abstract
- In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric-field-dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this paper, we present angle-resolved photoemission spectroscopy data which show with high resolution the electronic band structure of trilayer graphene obtained on alpha-SiC(0001) and beta-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low-energy electron microscopy measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that, on SiC substrates, the occurrence of a rhombohedral stacked trilayer is significantly higher than in natural bulk graphite.
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| 8. |
- Forti, S., et al.
(author)
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Large-area homogeneous quasifree standing epitaxial graphene on SiC(0001): Electronic and structural characterization
- 2011
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In: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 84:12
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Journal article (peer-reviewed)abstract
- The growth of epitaxial graphene on SiC has been identified as one of the most promising techniques to produce graphene for electronic applications. In this paper, we present a systematic study of the electronic and structural properties of large-area quasifree standing epitaxial monolayer graphene grown on top of the SiC(0001) surface. For this purpose, we combine the thermal treatment of SiC in Ar atmosphere to achieve a homogeneous coverage of the surface with the hydrogen intercalation process, which leads to the removal of the interaction between the substrate and the carbon layer. The band structure in the vicinity of the (K) over bar point is measured using high-resolution angle-resolved photoelectron spectroscopy. A detailed analysis of the quasiparticle dynamics reveals a renormalization of the band velocity estimated to about 3% at energies around 200 meV below the Fermi level, which mainly originates from electron-phonon interaction. Further analysis of the momentum distribution curves leads to the formulation of a model for the doping reduction in such a system in the course of sample annealing above 650 degrees C. The uniformity and homogeneity of the graphene is demonstrated by means of low-energy electron microscopy (LEEM). Microphotoelectron spectroscopy data confirm the high structural quality and homogeneity of the quasifree standing graphene. Using LEEM and scanning tunneling microscopy, we demonstrate that the hydrogen desorption at elevated temperatures of approximately 750 degrees C sets in on the graphene terraces rather than via the step edges.
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| 9. |
- Forti, S., et al.
(author)
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Mini-Dirac cones in the band structure of a copper intercalated epitaxial graphene superlattice
- 2016
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In: 2D Materials. - : IOP Publishing. - 2053-1583. ; 3:3
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Journal article (peer-reviewed)abstract
- The electronic band structure of an epitaxial graphene superlattice, generated by intercalating a monolayer of Cu atoms, is directly imaged by angle-resolved photoelectron spectroscopy. The 3.2 nm lateral period of the superlattice is induced by a varying registry between the graphene honeycomb and the Cu atoms as imposed by the heteroepitaxial interface Cu/SiC. The carbon atoms experience a lateral potential across the supercell of an estimated value of about 65 meV. The potential leads to strong energy renormalization in the band structure of the graphene layer and the emergence of mini-Dirac cones. The mini-cones' band velocity is reduced to about half of graphene's Fermi velocity. Notably, the ordering of the interfacial Cu atoms can be reversibly blocked by mild annealing. The superlattice indeed disappears at∼220 °C.
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| 10. |
- Guo, Qinda, et al.
(author)
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A narrow bandwidth extreme ultra-violet light source for time- and angle-resolved photoemission spectroscopy
- 2022
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In: Structural Dynamics. - : AIP Publishing. - 2329-7778. ; 9:2
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Journal article (peer-reviewed)abstract
- Here, we present a high repetition rate, narrow bandwidth, extreme ultraviolet photon source for time- and angle-resolved photoemission spectroscopy. The narrow bandwidth pulses Δ E = 9, 14, and 18 meV for photon energies h ν = 10.8, 18.1, and 25.3 eV are generated through high harmonic generation using ultra-violet drive pulses with relatively long pulse lengths (461 fs). The high harmonic generation setup employs an annular drive beam in tight focusing geometry at a repetition rate of 250 kHz. Photon energy selection is provided by a series of selectable multilayer bandpass mirrors and thin film filters, thus avoiding any time broadening introduced by single grating monochromators. A two stage optical-parametric amplifier provides < 100 fs tunable pump pulses from 0.65 μm to 9 μm. The narrow bandwidth performance of the light source is demonstrated through angle-resolved photoemission measurements on a series of quantum materials, including high-temperature superconductor Bi-2212, WSe2, and graphene.
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| 11. |
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| 12. |
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| 13. |
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| 14. |
- Link, S., et al.
(author)
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Introducing strong correlation effects into graphene by gadolinium intercalation
- 2019
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In: Physical Review B. - 2469-9950. ; 100:12
-
Journal article (peer-reviewed)abstract
- Exotic ordered ground states driven by electronic correlations are expected to be induced in monolayer graphene when doped to the Van Hove singularity. Such doping levels are reached by intercalating Gd in graphene on SiC(0001), resulting in a strong homogeneity and stability. The electronic spectrum now exhibits severe renormalizations. Flat bands develop which are driven by electronic correlations according to our theoretical studies. Due to strong electron-phonon coupling in this regime, polaron replica bands develop. Thus, interesting ordered ground states should be made accessible.
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| 15. |
- Nigge, P., et al.
(author)
-
Room temperature strain-induced Landau levels in graphene on a wafer-scale platform
- 2019
-
In: Science Advances. - : AMER ASSOC ADVANCEMENT SCIENCE. - 2375-2548. ; 5:11
-
Journal article (peer-reviewed)abstract
- Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudomagnetic fields have been explored on the nano- and micrometer-scale using scanning probe and transport measurements. Heteroepitaxial strain, in contrast, is a wafer-scale engineering method. Here, we show that pseudomagnetic fields can be generated in graphene through wafer-scale epitaxial growth. Shallow triangular nanoprisms in the SiC substrate generate strain-induced uniform fields of 41 T, enabling the observation of strain-induced Landau levels at room temperature, as detected by angle-resolved photoemission spectroscopy, and confirmed by model calculations and scanning tunneling microscopy measurements. Our work demonstrates the feasibility of exploiting strain-induced quantum phases in two-dimensional Dirac materials on a wafer-scale platform, opening the field to new applications.
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| 16. |
- Riedl, C., et al.
(author)
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Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy
- 2008
-
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 93:3
-
Journal article (peer-reviewed)abstract
- We demonstrate an easy and practical method for the thickness analysis of epitaxial graphene on SiC(0001) that can be applied continuously during the preparation procedure. Fingerprints in the spot intensity spectra in low energy electron diffraction (LEED) allow for the exact determination of the number of layers for the first three graphene layers. The LEED data have been correlated with the electronic bandstructure around the (K) over bar -point of the graphene Brillouin zone as investigated by laboratory based angle resolved ultraviolet photoelectron spectroscopy using He II excitation. The morphology and homogeneity of the graphene layers can be analyzed by low energy electron microscopy. (C) 2008 American Institute of Physics.
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| 17. |
- Riedl, C., et al.
(author)
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Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
- 2009
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In: Physical Review Letters. - 1079-7114. ; 103:24
-
Journal article (peer-reviewed)abstract
- Quasi-free-standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the (6 root 3 x 6 root 3) R 30 degrees reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this buffer layer, are now saturated by hydrogen bonds. The buffer layer is turned into a quasi-free-standing graphene monolayer with its typical linear pi bands. Similarly, epitaxial monolayer graphene turns into a decoupled bilayer. The intercalation is stable in air and can be reversed by annealing to around 900 degrees C.
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| 18. |
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| 19. |
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| 20. |
- van Lankveld, JJDM, et al.
(author)
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Women's sexual pain disorders
- 2010
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In: The journal of sexual medicine. - : Oxford University Press (OUP). - 1743-6109 .- 1743-6095. ; 7:11 Pt 2, s. 615-631
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Journal article (peer-reviewed)
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| 21. |
- Virojanadara, Chariya, et al.
(author)
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Electronic and atomic structure of the 4 H-SiC (1 over(1, ¯) 0 2) -c (2 × 2) surface
- 2008
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In: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 602:2, s. 525-533
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Journal article (peer-reviewed)abstract
- The (1 over(1, ¯) 0 2) orientated plane of hexagonal silicon carbide of the 4H polytype consists of a periodic arrangement of stripes with alternating bond configuration on a nanometer scale. The two stripe configurations of the bulk truncated surface have an atomic structure very close to the carbon-face SiC basal plane and the cubic SiC(1 0 0) surface, respectively. The structural and electronic properties of the c(2 × 2) reconstruction on the 4 H-SiC (1 over(1, ¯) 0 2) surface were investigated using photoemission spectroscopy (PES), scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). The core level photoemission spectra reveal two surface shifted Si2p components and one shifted C1s component in addition to the SiC bulk peaks. In accordance with the periodicity observed in LEED, atomically resolved STM micrographs show a c(2 × 2) arrangement of bright features which are accounted as Si adatoms. The electronic structure of this SiC (1 over(1, ¯) 0 2) -c (2 × 2) phase is experimentally determined by angle resolved PES studies of the valence band revealing four surface states. Based on the experimental observations and a comparison to similar phases on other SiC surfaces, a tentative surface model can be developed which consists of Si adatoms in so-called H3 sites on the basal-plane type stripes and carbon dimers in Si bridging configuration on the cubic stripes of the bulk truncated surface. © 2007 Elsevier B.V. All rights reserved.
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| 22. |
- Virojanadara, Chariya, et al.
(author)
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Silicon adatom chains and one-dimensionally confined electrons on 4H-SiC(1-102): The (2x1) reconstruction
- 2008
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In: Surface Science. - : Elsevier. - 0039-6028 .- 1879-2758. ; 602:22, s. 3506-3509
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Journal article (peer-reviewed)abstract
- The electronic and atomic structure of the 4H-SiC surface was investigated. Photoemission data indicate that the surface contains about 2 Si layers on top of the bulk layers. Scanning tunneling microscopy images show that these adlayers are terminated by an ordered array of adatom chains separated by the unit cell size. An electronic surface state located at a binding energy of 0.8 eV shows one-dimensional confinement with dispersion only along the chains. Based on the experimental observations, a tentative (2 × 1) surface model is derived with the surface terminated by alternating chains of Si adatoms and Si dimers in between.
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