| 1. |
- Ahmed, Istaq, 1972, et al.
(author)
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Improved Proton Conductivity in Spark-Plasma Sintered Dense Ceramic BaZr0.5In0.5O3-delta
- 2010
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In: Electrochemical and Solid State Letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 13:11
-
Journal article (peer-reviewed)abstract
- Spark-plasma sintering method was used to prepare dense proton conducting perovskite oxide BaZr0.5In0.5O3-delta. Analysis of X-ray powder diffraction data showed that the sample adopt the cubic crystal structure having the space group Pm3m. Thermogravimetric analysis of prehydrated samples showed significant mass losses beyond 300 degrees C due to loss of protons as water vapor. Scanning electron microscope images show that the grain size of the spark-plasma sintered dense sample was smaller than that of solid-state sintered porous sample. The highest total proton conductivity (2 X 10(-3) S cm(-1) at 450 degrees C) was found for dense spark-plasma sintered sample under wet H-2 than the samples prepared by other routes.
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| 2. |
- Badel, Xavier, et al.
(author)
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Electrochemical etching of n-type silicon based on carrier injection from a back side p-n junction
- 2003
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 6:6, s. C79-C81
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Journal article (peer-reviewed)abstract
- A technique for electrochemical etching of n-type silicon in aqueous hydrofluoric acid is presented. This technique differs from photoelectrochemical etching because the holes (positive carriers) needed for the dissolution reaction to occur, are not photogenerated. The principle developed here is to inject these positive carriers using a p-n junction under forward bias formed at the back side of the sample. Drift-diffusion of holes through the wafer thickness allows a chemical dissolution reaction at the interface with the electrolyte. To enable holes diffusing through the wafer the minority carrier lifetime must be sufficiently high making the technique well adapted for high resistivity silicon. However, extension to low resistivity wafers has been achieved. Results show the possibility of forming pore arrays and diverse 3D structures.
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| 3. |
- Barrios, C. A., et al.
(author)
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GaAs/AlGaAs buried heterostructure laser by wet etching and semi-insulating GaInP : Fe regrowth
- 2000
-
In: Electrochemical and solid-state letters. - 1099-0062 .- 1944-8775. ; 3:9, s. 439-441
-
Journal article (peer-reviewed)abstract
- Selective regrowth of semi-insulating Ga0.51In0.49P:Fe (SI-GaInP:Fe) by hydride vapor-phase epitaxy around Al-containing wet etched laser mesas is used for the first time to fabricate a GaAs/AlGaAs buried heterostructure laser emitting at 808 nm. The reverse and forward current-voltage characteristics measured at different temperatures up to 80 degrees C indicate no serious leakage current problems. The performance of the laser shows that the SI-GaInP: Fe burying layer fulfills its function as a current and optical confinement layer. The fabrication procedure and the laser characteristics are presented.
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| 4. |
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| 5. |
- Björkbacka, Åsa, et al.
(author)
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Radiation Induced Corrosion of Copper in Anoxic Aqueous Solution
- 2012
-
In: Electrochemical and solid-state letters. - : ELECTROCHEMICAL SOC INC. - 1099-0062 .- 1944-8775. ; 15:5, s. C5-C7
-
Journal article (peer-reviewed)abstract
- The effect of gamma radiation on corrosion of copper under anoxic conditions in pure water has been studied experimentally. Copper samples submerged in water were exposed to dose rates of 0.37 or 0.77 kGy/h. Reference samples were used throughout. The copper surfaces have been examined using the techniques of SEM-EDS, IRAS, CR spectroscopy and AFM. Dissolution of copper was measured using ICP-OES. The results show that irradiated samples are more corroded than corresponding reference samples. This is also reflected by the increased concentration of copper in water after irradiation. Surface examination also reveals local corrosion features.
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| 6. |
- Chen, Si, et al.
(author)
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Current Instability for Silicon Nanowire Field-Effect Sensors Operating in Electrolyte with Platinum Gate Electrodes
- 2011
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 14:7, s. J34-J37
-
Journal article (peer-reviewed)abstract
- Current instability is observed for silicon nanowire field-effect transistors operating in electrolytes with Pt gate electrodes. A comparative study involving an Ag/AgCl-reference gate electrode reveals that the effect results from a drift in the potential at the Pt-electrode/electrolyte interface. In a phosphate buffer saline of pH 7.4, the stabilization of the potential of the Pt electrode was found to require approximately 1000 s. A concurrent potential drift, with a comparable time constant, occurring at the electrolyte/oxidized-nanowire interface rendered a complex device current response which complicated the interpretation of the results.
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| 7. |
- Davoodi, Ali, et al.
(author)
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In-situ investigation of localized corrosion of aluminum alloys in chloride solution using integrated EC-AFM/SECM technique
- 2005
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 8:6, s. B21-B24
-
Journal article (peer-reviewed)abstract
- Scanning electrochemical microscopy (SECM) has been integrated with electrochemical atomic force microscopy (EC-AFM), and applied for in situ studies of localized corrosion of Al alloys in NaCl solution. The instrument utilizes a dual mode probe, which functions both as a normal cantilever and as an ultramicroelectrode. The I-/I3- redox mediator was used for mapping of local electrochemical current. Concurrent topography and electrochemical activity maps have been obtained on the same surface area with micrometer lateral resolution. Preliminary results show ongoing localized dissolution related to intermetallic particles in the Al alloys, which may occur well below the breakdown potential.
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| 8. |
- Feng, B., et al.
(author)
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Catalysts and performances for direct methanol low-temperature (300 to 600 degrees C) solid oxide fuel cells
- 2006
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 9:2, s. A80-A81
-
Journal article (peer-reviewed)abstract
- A novel anode catalyst, C-MO-SDC (C=activated carbon/carbon black, M=Cu, Ni, Co, SDC=Ce0.9Sm0.1O1.95) was synthesized by employing a citrate/nitrate combustion technique. Carbon materials, e.g., activated carbon and carbon black were first used to improve the solid oxide fuel cell (SOFC) anode properties, especially to improve the microstructure and to enhance the anode conductivity and catalyst function for directly operating methanol as the fuel. The resulting anode catalyst C-MO-SDC materials used in a SOFC device have successfully achieved a high power density of 0.25 W cm(-2) by directly operating the methanol at 560 degrees C.
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| 9. |
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| 10. |
- Gao, Xindong, et al.
(author)
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Epitaxy of Ultrathin NiSi2 Films with Predetermined Thickness
- 2011
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 14:7, s. H268-H270
-
Journal article (peer-reviewed)abstract
- This letter presents a proof-of-concept process for tunable, self-limiting growth of ultrathin epitaxial NiSi2 films on Si (100). The process starts with metal sputter-deposition, followed by wet etching and then silicidation. By ionizing a fraction of the sputtered Ni atoms and biasing the Si substrate, the amount of Ni atoms incorporated in the substrate after wet etching can be controlled. As a result, the thickness of the NiSi2 films is increased from 4.7 to 7.2 nm by changing the nominal substrate bias from 0 to 600 V. The NiSi2 films are characterized by a specific resistivity around 50 mu Omega cm.
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| 11. |
- Ghosh, S., et al.
(author)
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Networks of electron-conducting polymer in matrices of ion-conducting polymers. Applications to fast electrodes
- 2000
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 3:5, s. 213-215
-
Journal article (peer-reviewed)abstract
- Poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate (PEDOT-PSS), an electronically conductive electroactive polymer, has been blended with an ion conducting polymer, polyethylene oxide (PEO), to increase the ionic mobility in the material. A substantial increase in the current density is observed in the cyclic voltammogram of the PEDOT-PSS, when the latter is blended with PEO. As supercapacitor electrodes, the blends give much higher energy densities at high power densities compared to the pure PEDOT-PSS. This enhancement of electrochemical properties has been ascribed to both intrinsic ionic conductivity of the PEO, and the swelling of the latter in liquid electrolyte solution, creating space for ion movement.
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| 12. |
- Gottlob, H. D. B., et al.
(author)
-
Leakage current mechanisms in epitaxial Gd(2)O(3) high-k gate dielectrics
- 2008
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 11:3, s. G12-G14
-
Journal article (peer-reviewed)abstract
- We report on leakage current mechanisms in epitaxial gadolinium oxide (Gd(2)O(3)) high-k gate dielectrics suitable for low standby power logic applications. The investigated p-type metal-oxide-semi con doctor capacitors are gated with complementary-metal-oxide-semiconductor-compatible fully silicided nickel silicide electrodes. The Gd(2)O(3) thickness is 5.9 nm corresponding to a capacitance equivalent oxide thickness of 1.8 nm. Poole-Frenkel conduction is identified as the main leakage mechanism with the high-frequency permittivity describing the dielectric response on the carriers. A trap level of Phi(T) = 1.2 eV is extracted. The resulting band diagram strongly suggests hole conduction to be dominant over electron conduction.
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| 13. |
- Isheden, Christian, et al.
(author)
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MOSFETs with recessed SiGe Source/Drain junctions formed by selective etching and growth
- 2004
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 7:4, s. G53-G55
-
Journal article (peer-reviewed)abstract
- A source/drain extension process that uses HCl etching followed by selective growth of in situ B-doped SiGe is demonstrated. The two key process steps, etching and growth, are integrated by performing them consecutively in the same chemical vapor deposition reactor. The technique has the potential to solve end-of-the-roadmap requirements on junction depth, junction abruptness, and active doping concentration.
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| 14. |
- Karthik, K. R. G., et al.
(author)
-
Physical and Electrical Properties of Single Zn2SnO4 Nanowires
- 2011
-
In: Electrochemical and solid-state letters. - Pennington, NJ : Electrochemical Society. - 1099-0062 .- 1944-8775. ; 14:1, s. K5-K7
-
Journal article (peer-reviewed)abstract
- Electrical characterizations of single Zn2SnO4 (ZTO) nanowire devices are presented. These include resistivity, mobility, and photosensing measurements. The resistivity and the mobility of the Zn2SnO4 nanowire were measured to be 5.6 cm and 0.2 cm2/Vs, respectively. These values were found to be strongly dependent on the amount of electron-donating defects and less dependent on the thickness of the nanowires. An increase in the resistivity when changing the ambient atmosphere is observed. This change is caused by defect states lying in the bandgap, as shown by photoluminescence. The results imply the potential of ZTO nanowires as phototransistors and other photosensitive devices. © 2010 The Electrochemical Society.
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| 15. |
- Li, S., et al.
(author)
-
A high functional cathode material
- 2006
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 9:2, s. A86-A87
-
Journal article (peer-reviewed)abstract
- A novel type of LaNi1-xFexO3 (x=0.4-0.8) (LNF) perovskite oxide, specifically LaNi0.4Fe0.6O3 (LNF-46), was synthesized and studied as the cathode for low-temperature, 400-500 degrees C, solid oxide fuel cells (LTSOFCs). The maximum power density of 227 mW/cm(2) was obtained at 450 degrees C and a rather close result was also obtained at 400 degrees C. The cell performance showed that with a proper choice of the LNF-based cathode material and a suitable electrolyte, the operation of LTSOFC at temperatures 400-500 degrees C is a realistic goal.
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| 16. |
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| 17. |
- Lu, Jun, et al.
(author)
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On Epitaxy of Ultrathin Ni1-xPtx Silicide Films on Si(001)
- 2010
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 13:10, s. H360-H362
-
Journal article (peer-reviewed)abstract
- Epitaxial Ni(Pt)Si2-y (y < 1) films readily grow upon thermal treatment of 2 nm thick Ni and Ni0.96Pt0.04 films deposited on Si(001). For annealing at 500 degrees C, the films are 5.4-5.6 nm thick with 61-70 mu cm in resistivity. At 750 degrees C, the epitaxial Ni(Pt)Si2-y films become 6.1-6.2 nm thick with a resistivity of 42-44 mu cm. Structural analysis reveals twins, facet wedges, and thickness inhomogeneities in the films grown at 500 degrees C. For higher temperature, an almost defect-free NiSi2-y film with a flat and sharp interface is formed. The presence of Pt makes the aforementioned imperfections more persistent.
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| 18. |
- Martin, David, et al.
(author)
-
Thick NiSi Electrodes for AlN Electroacoustic Applications
- 2009
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 12:5, s. H182-H184
-
Journal article (peer-reviewed)abstract
- Theuse of thick NiSi electrodes in electroacoustic resonators allows front-endintegration with integrated circuit technology. Problems are identified in theformation of thick nickel silicide (NiSi) electrodes via a singledeposition of Ni onto blank Si wafers. An alternative fabricationprocess based on the deposition and silicidation of a multilayerfilm is presented. The films were found to have lowresistivity and smooth surfaces, with the layered structure preserved evenafter silicidation. Textured piezoelectric films of (002) wurtzite AlN demonstrateda diffraction-peak width that narrows to 3.5° when deposited ona thick 10 pair NiSi film.
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| 19. |
- Matic, Hanna, 1970, et al.
(author)
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In situ micro-Raman on the membrane in a working PEM cell
- 2005
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 8:1, s. A5-A7
-
Journal article (peer-reviewed)abstract
- An electrochemical cell has been designed for in situ micro-Raman measurements on the polymer membrane in an operating polymer electrolyte cell (PEM). The method is applicable to studies of both the distribution of water and membrane structure in the working cell environment. An initial study of the water distribution across a Nafion 117 membrane in a cell working as a H-2/H-2 pump cell at hydrogen flow and currents from 0 to 300 mA/cm(2) is presented. The results show that a hydration profile with a lower water content at the anode forms as current is applied to the cell.
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| 20. |
- Olsson, C. -OA., et al.
(author)
-
Quantifying the Metal Nickel Enrichment on Stainless Steel
- 2011
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 14:1, s. C1-C3
-
Journal article (peer-reviewed)abstract
- Enrichment in metallic nickel below the passive film on a stainless steel was quantified using the novel HIgh Kinetic Energy Photo-Electron Spectroscopy technique. Two surfaces were tested: one passivated in air and one polarized to the mid passive region in 0.5 M H2SO4. Primary beam energies ranging from 2 to 6 keV were used to determine the thickness of the nickel-enriched layer to 0.55 nm with a Ni content of 70%.
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| 21. |
- Pejnefors, J., et al.
(author)
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Effects of growth kinetics and surface emissivity on chemical vapor deposition of silicon in a lamp-heated single-wafer reactor
- 2001
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 4:11, s. G98-G100
-
Journal article (peer-reviewed)abstract
- Chemical vapor deposition of Si in a lamp-heated single-wafer reactor is studied by monitoring the growth rate of films deposited on bare S. silicon-on-insulator (SOI), and oxidized Si wafers. The growth rate is consistently higher for deposition of polycrystalline Si than for epitaxy of Si. due to different kinetics dictating the two depositions. Epitaxy of Si on SOI shows a higher overall growth rate than on hare Si. Likewise, deposition of polycrystalline Si on oxidized Si wafer with a 4000 Angstrom thick oxide has a higher growth rate than on that with 15 Angstrom oxide. These are attributed to surface emissivity variation during Si deposition. The difference in kinetics plays a more dominant role than the surface emissivity variation in affecting the growth rate for the depositions studied.
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| 22. |
- Said, Elias, et al.
(author)
-
Visualizing the Electric Field in Electrolytes Using Electrochromism from a Conjugated Polymer
- 2005
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 8:2, s. H12-H16
-
Journal article (peer-reviewed)abstract
- Electrochromic polymer films, employed as display elements, smart windows, and the base material for electrochemical electronic devices, can be addressed solely through ionic transport via an electrolyte, without direct electronic connection as typically employed in the above examples. We present a demonstration of induced electrochromism to quantify the direction and magnitude of the electric field in an electrolyte using poly(3,4-ethylenedioxythiophene) doped with polystyrene-sulfonate. After further development, this simple yet effective technique will be potentially applicable for optimizing batteries and fuel cells, as the active detection element in electrochemical sensors and as a detector in ionic separation in electrolytes (electrophoresis).
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| 23. |
- Sathirachinda, Namurata, et al.
(author)
-
Characterization of phases in duplex stainless steel by magnetic force microscopy/scanning kelvin probe force microscopy
- 2008
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 11:7, s. C41-C45
-
Journal article (peer-reviewed)abstract
- A 2205 duplex stainless steel, which had undergone a slow cooling process in order to precipitate intermetallic phases, was characterized by means of magnetic force microscopy (MFM) and scanning Kelvin probe force microscopy (SKPFM), in addition to conventional scanning electron microscope and energy-dispersive spectroscopy analysis. MFM measurements yield information about the magnetic domain distribution, while SKPFM provides the variation in Volta potential between austenite (gamma), ferrite (alpha), and sigma phases (sigma). In general, paramagnetic austenite exhibits the highest Volta potential, followed by nonmagnetic sigma phase and ferromagnetic ferrite, respectively. Results show the applicability of MFM/SKPFM techniques for characterization of the individual phase properties of duplex stainless steel. Because a cross talk between magnetic and Volta potential signals has been observed, it is recommended to perform SKPFM measurements with nonmagnetic tips.
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| 24. |
- Sisbandini, Ciptanti, et al.
(author)
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Effect of Short-Chain Amine Coatings on the Performance of LiFePO4 Li-Ion Battery Cathodes
- 2009
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 12:5, s. A99-A101
-
Journal article (peer-reviewed)abstract
- Thispaper probes the coating of LiFePO4 (Phostech Lithium) particles bythe self-adsorbance of surfactant molecules. The presence of the short-chainamines: hexadecylamine and polyetheramine [glyceryl poly(oxypropylene)triamine] on the particles isconfirmed qualitatively by X-ray photoelectron spectroscopy analysis, and the Brunauer–Emmett–Tellersurface area of the amine-coated LiFePO4 decreases with increasing amountsof amine on the surface. LiFePO4 with a 1 wt % polyetheraminecoating exhibits a capacity of ~160 mAh/g, i.e., 13% higher thancould be achieved with the as-received LiFePO4. A small amountof oligomeric coating would thus appear to be capable ofincreasing ion transport close to the particle surface.
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| 25. |
- Soderstrom, D., et al.
(author)
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Electrical characterization of ruthenium-doped InP grown by low pressure hydride vapor phase epitaxy
- 2001
-
In: Electrochemical and solid-state letters. - 1099-0062 .- 1944-8775. ; 4:6, s. G53-G55
-
Journal article (peer-reviewed)abstract
- Epitaxial layers of ruthenium-doped InP grown by low-pressure hydride vapor phase epitaxy have been studied. Current voltage measurements were conducted at temperatures between 20 and 200 degreesC for samples doped with Ru in the range 1 x 10(17) to 5 X 10(17) cm(-3). In this doping range, the specific resistivity of n(+)/InP:Ru/n(+) structures accommodating electron injection is less than or equal to1 x 10(4) Ohm cm and that of p(+)/InP:Ru/p(+) structures accommodating hole injection is as high as 3 x 10(10) Ohm cm. The reason for such a huge difference in the resistivity of these structures is attributed to a low activation of deep Ru acceptors, thus rather giving rise to an n(-) layer than a semi-insulating layer, as supported by our theoretical simulation. Analysis of the Arrhenius plots constructed from the temperature-dependent I-V curves yield an average activation energy of Ru with reference to the conduction band equal to 0.44 and 0.52 eV under electron and hole injection, respectively.
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| 26. |
- Sun, Yan-Ting, et al.
(author)
-
Sulfur-doped indium phosphide on silicon substrate brown by ELOG
- 2004
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 7:11, s. G269-G271
-
Journal article (peer-reviewed)abstract
- The epitaxial lateral overgrowth (ELOG) of sulfur-doped InP on masked InP/Si substrate in a low-pressure hydride vapor phase epitaxy system was investigated. Octahedral shaped ELOG InP templates with smooth surface were formed and studied by cathodoluminescence (CL). High-energy transition at 825 nm due to the band-filling effect was observed in spectra at 80 K. The band edge transition at 875 nm has no red shift caused by thermal strain. As observed in panchromatic image, defect free area was surrounded by high density threading dislocations pinned by sulfur atoms due to impurity hardening.
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| 27. |
- Szakalos, Peter, et al.
(author)
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Corrosion of copper by water
- 2007
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 10:11, s. C63-C67
-
Journal article (peer-reviewed)abstract
- We have studied copper corrosion in a system comprised of deionized water, absolute pressure gauges, and a palladium membrane. A transition from O-2-consuming to H-2-evolving copper corrosion is observed, which indicates that copper can corrode by water itself. The equilibrium hydrogen pressure in corrosion of copper by water at 73 degrees C exceeds the steady-state atmospheric hydrogen pressure (5 x 10(-7) bar) by a factor of about 2000. The growth of a hydrogen-containing corrosion product in O-2-free water is controlled by the hydrogen removal from the corroding surface. The results are discussed in the perspective of conventional potential-pH diagram for copper.
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| 28. |
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| 29. |
- Vangbo, Mattias, et al.
(author)
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High precision crystallographic alignment of InP(100)
- 1999
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 2:8, s. 407-408
-
Journal article (peer-reviewed)abstract
- The precise crystallographic orientation of InP wafers is revealed using a crystalign pattern that is etched for a short time. A device pattern can then be aligned to the manifested direction. Alignment of V-grooves for precise cleaving of side emitting lasers is demonstrated with a precision of 0.063°
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| 30. |
- Wu, D., et al.
(author)
-
Notched-gate pMOSFET with ALD TiN/high-kappa gate stack formed by selective wet etching
- 2004
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 7:10, s. G228-G230
-
Journal article (peer-reviewed)abstract
- Proof-of-concept notched-gate metal-oxide-semiconductor field-effect transistor (MOSFET) with the integration of atomic layer deposition (ALD) metal gate/high-kappa dielectric is demonstrated. The notched gate is formed by a combination of plasma dry etch and subsequent selective wet etch of a poly-Si0.7Ge0.3/TiN bilayer gate electrode stack. The height of the notch is determined mainly by the thickness of the TiN layer, and the width is controlled by the wet underetch of the TiN beneath the Si0.7Ge0.3 layer. Compared with reference MOS transistors with a similar gate stack, the notched gate pMOSFETs exhibited an expected reduction of the parasitic overlap capacitances.
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| 31. |
- Öhman, Maria, et al.
(author)
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A spectroelectrochemical study of metal/polymer interfaces by simultaneous in situ ATR-FTIR and EIS
- 2007
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 10:4, s. C27-C30
-
Journal article (peer-reviewed)abstract
- Buried aluminum/polymer interfaces were studied using a spectroelectrochemical experimental setup based on simultaneous in situ attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and electrical impedance spectroscopy (EIS). Transport of water and electrolyte through the polymer film to the aluminum/polymer interface and oxidation/corrosion of aluminum was followed by ATR-FTIR, while the impedance behavior of the system was simultaneously studied by EIS. As the ATR-FTIR technique is specific for the aluminum/polymer interfacial region while EIS takes into account alterations of both the polymer bulk and the interface, the combined setup provides complementary information of the system investigated.
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| 32. |
- Öijerholm, Johan, et al.
(author)
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Study of Initial Oxidation of Engineering Alloys by High Temperature Cyclic Voltammetry
- 2007
-
In: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 10:6, s. 47-50
-
Journal article (peer-reviewed)abstract
- The initial oxidation of Fe-, Co-, and Ni-based engineering alloys was studied in situ by high-temperature cyclic voltammetry. Measurements were performed at constant temperatures between 500 and 800 degrees C in an electrochemical cell utilizing oxygen ion-conducting yttria-stabilized zirconia as electrolyte and a reference electrode whose potential is determined by the oxygen activity in the ambient gas. The recorded voltammograms show clear current peaks that are associated with the oxidation of the base metal in the investigated alloys. For the Fe- based alloy, multiple peaks are observed, showing oxidation of Fe into different valence oxides. The results indicate that the base metal oxide is formed in the initial oxidation process of these engineering alloys, which may influence long-term high-temperature oxidation resistance of the alloys.
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| 33. |
- Andersson, AS, et al.
(author)
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Thermal stability of LiFePO4-based cathodes
- 2000
-
In: ELECTROCHEMICAL AND SOLID STATE LETTERS. - : ELECTROCHEMICAL SOC INC. - 1099-0062. ; 3:2, s. 66-68
-
Journal article (peer-reviewed)abstract
- The capacity and cyclability of solid-state synthesized LiFePO4-based laminate cells of type have been studied at 23, 40, and 60 degrees C. Larger capacities were obtained for cells cycled at the elevated temperatures. No evidenc
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| 34. |
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| 35. |
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| 36. |
- Inoue, Hirofumi, et al.
(author)
-
CO2 Sensor Combining an MISiC Capacitor and a Binary Carbonate
- 2011
-
In: ELECTROCHEMICAL AND SOLID STATE LETTERS. - : Electrochemical Society and Institute of Electronics Engineers. - 1099-0062. ; 14:1, s. J4-J7
-
Journal article (peer-reviewed)abstract
- A solid-state CO2 sensor device using a metal-insulator-silicon carbide (MISiC) capacitor combined with a Li2CO3-BaCO3 auxiliary layer was fabricated and tested for its basic sensing properties. The MISiC-based CO2 sensor attached with the carbonate showed typical capacitance-voltage (C-V) properties in air at 400 degrees C, and the sensor device responded well to changes in CO2 concentration in air at 400 degrees C. The sensor signals were directly proportional to the logarithm of CO2 concentration. The results suggested that an electrochemical reaction of CO2 occurred at the interface between the carbonate layer and the electrode, causing the applied voltage to shift in response to CO2.
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| 37. |
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| 38. |
- Markusson, Henrik, 1976, et al.
(author)
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Electrochemical stability and lithium ion-anion interactions of orthoborate anions (BOB, MOB, BMB), and presentation of a novel anion: Tris-oxalato-phosphate
- 2005
-
In: Electrochemical and Solid-State Letters. - : The Electrochemical Society. - 1099-0062. ; 8:4, s. A215-A218
-
Journal article (peer-reviewed)abstract
- Ab initio calculations reveal the extraordinary low lithium ion affinities of the orthoborate anions bis(oxalate)borate (BOB), malonato-oxalatoborate (MOB), and bis(malonato)borate (BMB). HF and MP2 calculations reveal these anions to be less prone to associate with Li + (by ∼10%) than most anions used today, e.g., PF 6 - , BF 4 - , and TFSI, in low dielectric media such as polymeric electrolytes. Furthermore, by using self-consistent reaction field calculations to model the effect of high dielectric solvents present, the applicability of these anions also for liquid and gel electrolytes was proven. Future directions of lithium salt synthesis are outlined and exemplified by a new anion, suggested here for the first time. The HOMO levels of the anions are correlated to electrochemical stabilities in electrolytic solutions; all studied anions can be anticipated to have wide stability ranges. Finally, a new methodology to obtain starting data for geometry optimizations of cation-anion pairs by global optimization is presented. © 2005 The Electrochemical Society. All rights reserved.
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| 40. |
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| 41. |
- Raeissi, Bahman, 1979, et al.
(author)
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The Role of Mobile Charge in Oxygen Plasma-Enhanced Silicon-to-Silicon Wafer Bonding
- 2010
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In: Electrochemical and Solid-State Letters. - : The Electrochemical Society. - 1099-0062. ; 13:6, s. H179-H181
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Journal article (peer-reviewed)abstract
- Mechanical bonding energies of oxygen plasma treated and room-temperature wafer bonded silicon surfaces have been measured as a function of storage time in parallel with measurements of electrical interface properties. The surface energy increases with time dependence similar to that of decreasing interface state concentration. The current vs voltage behavior reveals the existence of mobile ions. We suggest that these mobile charges, after the reaction with the interface states, give rise to the increased surface energy responsible for bonding.
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| 42. |
- Hubbard, K. A., Jr., et al.
(author)
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Evaluating nitrate uptake in a Rocky Mountain stream using labelled N-15 and ambient nitrate chemistry
- 2010
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In: Hydrological Processes. - : Wiley. - 0885-6087 .- 1099-1085. ; 24:23, s. 3322-3336
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Journal article (peer-reviewed)abstract
- Background aqueous chemistry and N-15(nitrate) tracer injection methods were used to calculate in-stream nitrate uptake metrics at Red Canyon Creek, a third-order stream in the Rocky Mountains in the state of Wyoming, United States. 'Net' nitrate uptake lengths, which reflect both nitrate uptake and regeneration, and 'gross' nitrate uptake lengths, which exclude re-mineralization, were quantified separately from background nitrate chemistry and N-15 labelling tracer data, respectively. Gross nitrate uptake lengths, from tracer injections of N-15 labelled nitrate, ranged from 502 to 3140 m. Net nitrate uptake lengths, from background nitrate chemistry downstream of a point source, ranged from 1170 to 4330 m. Diurnal changes in uptake lengths suggest the importance of nitrate utilization by autotrophs in the stream and benthic zone. The differences between net and gross nitrate uptake lengths along lower reaches of Red Canyon Creek allowed us to estimate the nitrate regeneration rate, which was 0.056-0.080 mu mol m(-2) s(-1) during the day and 0.0062-0.0083 mu mol m(-2) s(-1) at night. Spatial patterns of streambed pore water chemistry indicate those areas of the hyporheic zone where denitrification was likely occurring. Permanent log dams generated stronger redox gradients in the hyporheic zone than areas with transient beaver dams. By combining isotopically labelled nitrate additions, estimates of uptake from background aqueous nitrate chemistry and characterization of redox conditions in the hyporheic zone, we were able to determine the nitrate regeneration rate and the redox processes responsible for nitrogen cycling in the hyporheic zone. Copyright. (C) 2010 John Wiley & Sons, Ltd.
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