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1.
  • Memisevic, E., et al. (author)
  • Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
  • 2017
  • In: 2016 IEEE International Electron Devices Meeting, IEDM 2016. - 9781509039012 ; , s. 1-19
  • Conference paper (peer-reviewed)abstract
    • We present a vertical nanowire InAs/GaAsSb/GaSb TFET with a highly scaled InAs diameter (20 nm). The device exhibits a minimum subthreshold swing of 48 mV/dec. for Vds = 0.1-0.5 V and achieves an Ion = 10.6 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V. The lowest subthreshold swing achieved is 44 mV/dec. at Vds= 0.05 V. Furthermore, a benchmarking is performed against state-of-the-art TFETs and MOSFETs demonstrating a record high I60 and performance benefits for Vds between 0.1 and 0.3 V.
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2.
  • Zota, Cezar B., et al. (author)
  • InGaAs tri-gate MOSFETs with record on-current
  • 2017
  • In: 2016 IEEE International Electron Devices Meeting, IEDM 2016. - 9781509039012 ; , s. 1-4
  • Conference paper (peer-reviewed)abstract
    • We demonstrate InGaAs tri-gate MOSFETs with an on-current of ION = 650 μA/μm at VDD = 0.5 V and IOFF = 100 nA/μm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of gm = 3 mS/μm, a Q-factor of 45. This is the highest reported Ion for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, gd and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.
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  • Result 1-2 of 2
Type of publication
conference paper (2)
Type of content
peer-reviewed (2)
Author/Editor
Svensson, J (1)
Wernersson, Lars-Eri ... (1)
Lindelow, Fredrik (1)
Lind, Erik (1)
Wernersson, L. E. (1)
Lind, E. (1)
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Memisevic, E. (1)
Hellenbrand, M. (1)
Zota, Cezar B. (1)
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University
Lund University (2)
Language
English (2)
Research subject (UKÄ/SCB)
Engineering and Technology (2)
Year
2017 (2)

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