| 1. |
- Monteiro, Margarida, et al.
(author)
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X-ray Photoelectron Spectroscopy for Studying Passivation Architectures of Cu(In,Ga)Se-2 Cells
- 2021
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In: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). - : Institute of Electrical and Electronics Engineers (IEEE). - 9781665419222 ; , s. 890-892
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Conference paper (peer-reviewed)abstract
- Optoelectronic devices are susceptible to interface recombination, which can have a detrimental impact on their performance. Therefore, there is an urgent need for tailored passivation strategies to reach a technological boost. In this contribution, two architectures based on passivated Cu(In, Ga)Se-2 solar cells are analyzed with X-ray photoelectron spectroscopy (XPS): one based on rear passivation with gold nanoparticle aggregates, and the other with Al2O3 as a front passivation layer. It is demonstrated that XPS can assist in the understanding of passivated devices from a chemical point of view, comprehend their limitations and push forward the development of future devices.
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| 2. |
- Oliveira, Kevin, et al.
(author)
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SiOx patterned based substrates implemented in Cu(In,Ga)Se-2 ultrathin solar cells : optimum thickness
- 2021
-
In: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). - : Institute of Electrical and Electronics Engineers (IEEE). - 9781665419222 ; , s. 928-930
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Conference paper (peer-reviewed)abstract
- Interface recombination in sub-mu m optoelectronic devices has a major harmful impact in devices performance, showing the need for tailored passivation strategies in order to reach a technological boost. In this work, SiOx based substrates were developed and integrated in ultrathin CIGS solar cells. This study aims at understanding the impact of several SiOx layer thicknesses (3, 8 and 25 nm) when this material is used as a passivation layer. Analysing their electrical parameters, the 8 nm novel SiOx based substrates achieved light to power conversion efficiency values up to 13.2 %, a 1.3 % absolute improvement over the conventional substrate (without SiOx).
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| 3. |
- Zehender, Marius H., et al.
(author)
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Design study of a nanowire three-terminal heterojunction bipolar transistor solar cell
- 2021
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In: 48th IEEE Photovoltaic Specialists Conference, PVSC 2021. - 0160-8371. - 9781665419222 ; , s. 1254-1257
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Conference paper (peer-reviewed)abstract
- We present an optical design study on a nanowire heterojunction bipolar transistor solar cell. The simple structure of this novel architecture of double-junction solar cell, allows for independent power extraction from the two junctions and makes the nanowire growth easier than in current-matched double-junction solar cells as there is no need for tunnel junctions and only three main semiconductor regions must be grown. We show that the nanowire heterojunction bipolar transistor solar cell design results in an optical performance similar to comparable planar devices, with the nanowires only covering 1/3 of the substrate area. Furthermore, it allows for the growth of lattice-mismatched semiconductor combinations, which increases the detailed balance efficiency limit.
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