| 1. |
- Carvalho, E. de, et al.
(author)
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EU FP7 INFSO-ICT-317669 METIS, D3.1 Positioning of multi-node/multi-antenna technologies
- 2013
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Reports (other academic/artistic)abstract
- This document describes the research activity in multi-node/multi-antenna technologies within METIS and positions it with respect to the state-of-the-art in the academic literature and in the standardization bodies. Based on the state-of-the-art and as well as on the METIS objectives,we set the research objectives and we group the different activities (or technology components) into research clusters with similar research objectives. The technologycomponents and the research objectives have been set to achieve an ambidextrous purpose. On one side we aim at providing the METIS system with those technological components that are a natural but non-trivial evolution of 4G. On the other side, we aim at seeking for disruptivetechnologies that could radically change 5G with respect to 4G. Moreover, we mapped the different technology components to METIS’ other activities and to the overall goals of theproject.
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| 2. |
- Fantini, R, et al.
(author)
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EU FP7 INFSO-ICT-317669 METIS, D3.2 First performance results for multi-node/multi-antenna transmission technologies
- 2014
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Reports (other academic/artistic)abstract
- This deliverable describes the current results of the multi-node/multi-antenna technologies investigated within METIS and analyses the interactions within and outside Work Package 3. Furthermore, it identifies the most promising technologies based on the current state of obtained results. This document provides a brief overview of the results in its first part. The second part, namely the Appendix, further details the results, describes the simulation alignment efforts conducted in the Work Package and the interaction of the Test Cases. The results described here show that the investigations conducted in Work Package 3 are maturing resulting in valuable innovative solutions for future 5G systems.
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| 3. |
- Jelic, V., et al.
(author)
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Initial LOFAR observations of epoch of reionization windows II. Diffuse polarized emission in the ELAIS-N1 field
- 2014
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In: Astronomy and Astrophysics. - : EDP Sciences. - 0004-6361 .- 1432-0746. ; 568, s. A101-
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Journal article (peer-reviewed)abstract
- Aims. This study aims to characterise the polarized foreground emission in the ELAIS-N1 field and to address its possible implications or extracting of the cosmological 21 cm signal from the LOw-Frequency ARray - Epoch of Reionization (LOFAR-EoR) data Methods. We used the high band antennas of LOFAR to image this region and RM-synthesis to unravel structures of polarized emission at high Galactic latitudes. Results. The brightness temperature of the detected Galactic emission is on average similar to 4 K in polarized intensity and covers the range from -10 to +13 rad m(-2) in Faraday depth, The total polarized intensity and polarization angle show a wide range of morphological features. We have also used the Westerbork Synthesis Radio Telescope (WSRT) at 350 MHz to image the same region. The LOFAR and WSRT images show a similar complex morphology at comparable brightness levels, but their spatial correlation is very low. The fractional polarization at 150 MHz, expressed as a percentage of the total intensity, amounts to approximate to 1.5%. There is no indication of diffuse emission in total intensity in the interferometric data. in line with results at higher frequencies Conclusions. The wide frequency range. high angular resolution, and high sensitivity make LOFAR an exquisite instrument for studying Galactic polarized emission at a resolution of similar to 1-2 rad m(-2) in Faraday depth. The different polarized patterns observed at 150 MHz and 350 MHz are consistent with different source distributions along the line of sight wring in a variety of Faraday thin regions of emission. The presence of polarized foregrounds is a serious complication for epoch of reionization experiments. To avoid the leakage of polarized emission into total intensity, which can depend on frequency, we need to calibrate the instrumental polarization across the field of view to a small fraction of 1%.
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| 4. |
- Gutt, T., et al.
(author)
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PECVD and thermal gate oxides on 3C vs. 4H SiC : Impact on leakage, traps and energy offsets
- 2015
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In: ECS Journal of Solid State Science and Technology. - : Electrochemical Society Inc.. - 2162-8769 .- 2162-8777. ; 4:9, s. M60-M63
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Journal article (peer-reviewed)abstract
- Energy-band model offsets, trap density distributions and gate leakage characteristics of MOS capacitors with PECVD and thermal gate oxides on 3C-SiC and 4H-SiC were compared. The difference in trap energy distributions between the polytypes confirmed the lesser 3C-SiC polytype vulnerability to near-interface traps (NIT), which are alternatively found in high density in the 4H-SiC. It was also shown that the quality of the PECVD oxides obtained in this experiment were comparable to that of the thermal oxide. Only a slight increase of leakage current was observed in the PECVD oxides due to oxide inhomogeneity in the lower electric field interval of the Fowler-Nordheim range. Finally, the energy band model of the SiC MOS devices was described quantitatively for different combinations of polytype and oxidation method, which illustrated the influence of technological processing on the energy offsets and potentials, and could be used for further development of the devices and processes. © The Author(s)
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