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Search: WFRF:(Behmenburg H.)

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  • Pecz, B., et al. (author)
  • GaN heterostructures with diamond and graphene
  • 2015
  • In: Semiconductor Science and Technology. - : IOP PUBLISHING LTD. - 0268-1242 .- 1361-6641. ; 30:11, s. 114001-
  • Journal article (peer-reviewed)abstract
    • The full performance of GaN devices for high power applications is not exploited due to their self-heating. Possible solutions are the integration of materials with high heat conductivity i.e., single crystalline diamond and graphene layers. We report the growth of single crystalline (0001)-oriented GaN thin films on (100), (110) and (111) diamond single crystals studied by transmission electron microscopy (TEM) in cross-sections. As for graphene, we show a high quality GaN layer that was deposited on patterned graphene layers and 6H-SiC. The atomic structures of the interfaces in the heterostructure are studied using aberration-corrected scanning TEM combined with energy dispersive x-ray and electron energy-loss spectroscopy.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Yakimova, Rositsa (1)
Kovacs, A (1)
Heuken, M (1)
Dunin-Borkowski, R. ... (1)
Toth, L (1)
Georgakilas, A (1)
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Pecz, B. (1)
Duchamp, M. (1)
Tsiakatouras, G. (1)
Adikimenakis, A. (1)
Neumann, P. L. (1)
Behmenburg, H. (1)
Foltynski, B. (1)
Giesen, C. (1)
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University
Linköping University (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
2015 (1)

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