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1.	Hourahine, B., et al. (author) Anomalous shift of the 1075 cm-1 oxygen-hydrogen defect in silicon 1997 In: Defects in semiconductors, ICDS-19. - : Trans Tech Publications Inc.. ; , s. 277-282 Conference paper (peer-reviewed)abstract First principles calculations are carried out on i) hydrogen and ii) water molecules trapped near an interstitial oxygen atom in Si. We find that it is possible for these molecules to cause an upward shift in the antisymmetric stretch mode of Oi when H is replaced by D, which could explain the anomalous shift in the 1075 cm-1 O-H related local vibrational mode. Both these molecules lead to modes in the 3500-4000 cm-1 region but those of the H2 lie close to those recently detected using Fourier transform infra-red spectroscopy.
2.	Markevich, Vladimir P., et al. (author) Radiation-induced defect reactions in tin-doped Ge crystals 2011 In: Solid State Phenomena. - 1012-0394 .- 1662-9779. ; 178 - 179, s. 392-397 Journal article (peer-reviewed)abstract We have recently shown that Sn impurity atoms are effective traps for vacancies (V) in Ge:Sn crystals irradiated with MeV electrons at room temperature [V.P. Markevich et al., J. Appl. Phys. 109 (2011) 083705]. A hole trap with 0.19 eV activation energy for hole emission to the valence band (Eh) has been assigned to an acceptor level of the Sn-V complex. In the present work electrically active defects introduced into Ge:Sn+P crystals by irradiation with 6 MeV electrons and subsequent isochronal annealing in the temperature range 50-300 oC have been studied by means of transient capacitance techniques and ab-initio density functional modeling. It is found that the Sn-V complex anneals out upon heat-treatments in the temperature range 50-100 oC. Its disappearance is accompanied by the formation of vacancy-phosphorus (VP) centers. The disappearance of the VP defect upon thermal annealing in irradiated Sn-doped Ge crystals is accompanied by the effective formation of a defect which gives rise to a hole trap with Eh = 0.21 eV and is more thermally stable than other secondary radiation-induced defects in Ge:P samples. This defect is identified as tin-vacancy-phosphorus (SnVP) complex. It is suggested that the effective interaction of the VP centers with tin atoms and high thermal stability of the SnVP complex can result in suppression of transient enhanced diffusion of phosphorus atoms in Ge.
3.	Pinto, Helder M., et al. (author) Ab initio studies of fluorine passivation on the electronic structure of the NV- defect in nanodiamond 2012 In: Journal of Nanoscience and Nanotechnology. - : American Scientific Publishers. - 1533-4880 .- 1533-4899. ; 12:11, s. 8589-8593 Journal article (peer-reviewed)abstract We have investigated using density functional theory the effect of fluorine termination of a (001) diamond surface on the electronic energy levels of an NV- centre buried beneath the surface. We find that, like OH termination, fluorine passivates the surface and reduces the influence of the surface on the electronic properties of the NV- centre. The results have significance for the optical properties of NV- defects in nanodiamonds
4.	Camps, I., et al. (author) Elastic and optical properties of Cu2ZnSn(SexS1-x)4 alloys: density functional calculations 2012 In: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 27:11 Journal article (peer-reviewed)abstract Cu2ZnSn(S1 − xSex)4 (CZT(S, Se)) is emerging as a very credible alternative to CuIn1 − xGaxSe2 (CIGS) as the absorber layer for thin film solar cells. The former compound has the important advantage of using abundant Zn and Sn instead of the expensive In and Ga. A better understanding of the properties of CZT(S, Se) is being sought through experimental and theoretical means. Thus far, however, very little is known about the fundamental properties of the CZT(S, Se) alloys. In this work, theoretical studies on the structural, elastic, electronic and optical properties of CZT(S, Se) alloys through first-principles calculations are reported. We use a density functional code (aimpro), along with the Padé parametrization for the local density approximation to the exchange correlation potential. For the alloying calculations we employed 64 atom supercells (approximately cubic) with a 2 × 2 × 2 k-point sampling set. These supercells possess a total of 32 chalcogen species and the CZTSexS1 − x alloys are described by using the ordered alloy approximation. Accordingly, to create a perfectly diluted alloying host, the species type of the 32 chalcogen sites is selected randomly with uniform probability x and 1 − x for Se and S, respectively. Properties of alloys (structural, elastic, electronic and optical) are obtained by averaging the results of ten supercell configurations generated for each composition. For each configuration, lattice vectors and atomic positions were allowed to relax (although enforcing the tetragonal lattice type) and the Murnaghan equation of state was fitted to the total energy data. The results presented here permit a better understanding of the properties of the CZT(S, Se) alloys which in turn result in the design of more efficient solar cells.
5.	Carvalho, Alexandra, et al. (author) Effect of oxidation on the doping of silicon nanocrystals with group III and group v elements 2012 In: The Journal of Physical Chemistry C. - : American Chemical Society (ACS). - 1932-7447 .- 1932-7455. ; 116:14, s. 8243-8250 Journal article (peer-reviewed)abstract Substitutional group III and group V elements, though commonly used as shallow dopants in bulk silicon, have a limited efficiency in silicon nanocrystals. In this work, we use first-principles models of 1.5 nm nanocrystals with hydride- and silanol-terminated surfaces to understand how oxidation influences the segregation and deactivation of dopants at the surface and the dopant binding energies. We show that the surface oxygen layer changes drastically the radial dependence of the dopant formation energy both for donors and for acceptors, but that, independently from the oxidation, dopant diffusion does not take place at operating conditions. Additionally, we show that the oxidation increases the electron binding energy of the P, As, and Sb and decreases the hole binding energy of B, Al, Ga, and In.
6.	Carvalho, Alexandra, et al. (author) Effect of the adsorption of ethylene carbonate on Si surfaces on the Li insertion behavior 2013 In: Chemical Physics Letters. - : Elsevier BV. - 0009-2614 .- 1873-4448. ; 585, s. 157-161 Journal article (peer-reviewed)abstract Effects of the ethylene carbonate (EC) solvent on Li insertion and diffusion in Si anodes are studied using density functional theory. On both (100) and (111) reconstructed surfaces of Si, a semi-dissociated (SD) configuration of EC is stable and most favorable for Li insertion, lowering its barrier by up to 0.2 eV vs a clean surface. The less stable molecular adsorption has little effect on Li insertion and diffusion, while the surface ketone formed by dissociating the SD configuration at a cost of 0.6 eV has a strong detrimental effect on Li insertion, increasing its barrier by up to 0.4 eV.
7.	Carvalho, Alexandra, et al. (author) Light induced degradation in B doped Cz-Si solar cells 2012 In: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 209:10, s. 1894-1897 Journal article (peer-reviewed)abstract We analyse the formation energy of interstitial boron (Bi) and the properties of the defect resulting from its association with an oxygen dimer (BiO2i) to evaluate the possibility that it may be the slow-forming centre responsible for the light-induced degradation of B-doped Si solar cells. However, we find that the formation energy of Bi is too high, and therefore its concentration is negligible. Moreover, we find that the lowest energy form of BiO2i is a shallow donor, and the deep donor form is high in energy. Lowest energy structure of the BiO2i defect.
8.	Carvalho, Alexandra T.G., et al. (author) Electronic and optical properties of chlorinated silicon nanoparticles 2013 In: Journal of Nanoscience and Nanotechnology. - : American Scientific Publishers. - 1533-4880 .- 1533-4899. ; 13:2, s. 1039-1042 Journal article (peer-reviewed)abstract First-principles calculations are used to investigate the structure, electronic and optical properties of silicon nanocystals with chlorine-passivated surface. The nanocrystals considered were approximately spherical, with diameters between 1.5 and 3.0 nm. We show that the nanocrystals with chlorinated surface have a smaller bandgap, lower optical absorption threshold, and greater ionization energy and electron affinity than hydrogenated silicon nanocrystals of the same size
9.	Carvalho, Alexandra T.G., et al. (author) Increased electronic coupling in silicon nanocrystal networks doped with F4-TCNQ 2013 In: Journal of Nanoscience and Nanotechnology. - : American Scientific Publishers. - 1533-4880 .- 1533-4899. ; 13:2, s. 1035-1038 Journal article (peer-reviewed)abstract The modification of the electronic structure of silicon nanocrystals using an organic dopant, 2,3,5,6- tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F 4-TCNQ), is investigated using first-principles calculations. It is shown that physisorbed F4-TCNQ molecules have the effect of oxidizing the nanocrystal, attracting the charge density towards the F 4-TCNQ-nanocrystal interface, and decreasing the excitation energy of the system. In periodic F4-TCNQ/nanocrystal superlattices, F 4-TCNQ is suggested to enhance exciton separation, and in the presence of free holes, to serve as a bridge for electron/hole transfer between adjacent nanocrystals.
10.	Coutinho, Jose, et al. (author) Early stage donor-vacancy clusters in germanium 2007 In: Journal of materials science. Materials in electronics. - : Springer Science and Business Media LLC. - 0957-4522 .- 1573-482X. ; 18:7, s. 769-773 Journal article (peer-reviewed)abstract There is considerable experimental evidence that vacancies in Ge dominate several solid state reactions that range from self-diffusivity to metal and dopant transport. It is therefore vital that we fully understand how vacancies interact with other point defects in Ge. Here we have a look at the properties of small donor-vacancy (Sb n V m with m,n ≤ 2) complexes in Ge by ab-initio density functional modeling. Particular attention has been payed to binding energies and to the electronic activity of the complexes. We found that all aggregates may contribute to the n→ p type conversion that is typically observed under prolonged MeV irradiation conditions. In general, Sb n V m defects are double acceptors. It is also suggested that spontaneous formation of Sb3V complexes may limit the activation level of donors introduced by ion implantation.
11.	Hedlund, Jonas, et al. (author) Mass transport in porous media from first principles : an experimental and theoretical study 2012 In: Journal of Membrane Science. - : Elsevier BV. - 0376-7388 .- 1873-3123. ; 415-416, s. 271-277 Journal article (peer-reviewed)abstract In the present work, the mass transport of helium through zeolite is experimentally determined by measuring the flow of helium through a zeolite membrane. By using a mathematical model, the mass transport through defects was accounted for to arrive at mass transport through zeolite pores. For the first time, we could thereby experimentally show that the mass transport of helium in zeolite pores is strongly controlled by the amount and location of hydrocarbons in the zeolite pores and varies several orders of magnitude. The mass transport of helium in ZSM-5 zeolite pores is first reduced gradually more than one order of magnitude when the loading of n-hexane is increased from 0 to 47% of saturation. As the loading of n-hexane is further increased to 54% of saturation, the mass transport of helium in the zeolite pores is further reduced abruptly by more than two orders of magnitude. This gradual decrease followed by an abrupt decrease of mass transport is caused by adsorption of n-hexane in the zeolite pores. In a similar yet different fashion, the mass transport of helium in the zeolite pores is reduced abruptly by almost two orders of magnitude when the loading of benzene is increased from 0 to 19% of saturation due to adsorption of benzene in the pore intersections. Effective medium approximation percolation models with parameters estimated using density functional theory employing the local density approximation, i.e. models with no adjustable parameters and the most sophisticated theory yet applied to this system, can adequately describe the experimental observations.
12.	Heikkinen, Olli, et al. (author) Characterization of a Hexagonal Phosphorus Adlayer on Platinum (111) 2015 In: The Journal of Physical Chemistry C. - : American Chemical Society (ACS). - 1932-7447 .- 1932-7455. ; 119:22, s. 12291-12297 Journal article (peer-reviewed)abstract Platinum is a well-known catalytic metal whose efficiency can be degraded by the adsorption of impurities. Using different characterization techniques, such as scanning tunnelling microscopy, low-energy electron diffraction, and X-ray photoelectron spectroscopy, we present a study of phosphorus adsorption on a platinum (111) surface. Under saturation and after annealing at 750 °C, phosphorus was observed to form an ordered hexagonal adlayer with a (4√3 × 4√3)-R30° symmetry. On the basis of density functional theory calculations, we propose a model for the phosphorus adlayer, consisting of either P13 or P14 clusters. In addition, carbon monoxide adsorption as a function of the phosphorus coverage was also investigated. We found that the phosphorus adlayer prevents carbon monoxide adsorption on Pt(111) reducing its catalytic efficiency. (Figure Presented
13.	Ivanovskaya, Viktoria V., et al. (author) Low-energy termination of graphene edges via the formation of narrow nanotubes 2011 In: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 107:6 Journal article (peer-reviewed)abstract We demonstrate that free graphene sheet edges can curl back on themselves, reconstructing as nanotubes. This results in lower formation energies than any other nonfunctionalized edge structure reported to date in the literature. We determine the critical tube size and formation barrier and compare with density functional simulations of other edge terminations including a new reconstructed Klein edge. Simulated high resolution electron microscopy images show why such rolled edges may be difficult to detect. Rolled zigzag edges serve as metallic conduction channels, separated from the neighboring bulk graphene by a chain of insulating sp3-carbon atoms, and introduce van Hove singularities into the graphene density of states.
14.	Iwata, Hisaomi, et al. (author) Localized electronic states around stacking faults in silicon carbide 2002 In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X .- 0163-1829. ; 65:3 Journal article (peer-reviewed)abstract We report on a first-principles study of all the structurally different stacking faults that can be introduced by glide along the (0001) basal plane in 3C-, 4H-, and 6H-SiC based on the local-density approximation within the density-functional theory. Our band-structure calculations have revealed that both types of stacking faults in 4H-SiC and two of the three different types of stacking faults in 6H-SiC give rise to quasi-two-dimensional energy band states in the band gap at around 0.2 eV below the lowest conduction band, thus being electrically active in n-type material. Although stacking faults, unlike point defects and surfaces, are not associated with broken or chemically perturbed bonds, we find a strong localization, within roughly 10-15 Å perpendicular to the stacking fault plane, of the stacking fault gap state wave functions. We find that this quantum-well-like feature of certain stacking faults in SiC can be understood in terms of the large conduction-band offsets between the cubic and hexagonal polytypes. Recent experimental results give qualitative support to our results.
15.	Iwata, Hisaomi P, et al. (author) An ab initio study of intrinsic stacking faults in GaN 2004 In: Materials Science Forum. - Stafa-Zuerich : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 457-460, s. 1617-1620, s. 1617-1620 Journal article (peer-reviewed)abstract A first-principles study of intrinsic stacking faults in GaN is reported. Our calculations are based on density functional theory in local density approximation. We have found that the electron wave functions belonging to the conduction and valence band edge states tend to be localized almost exclusively on different sides of the faulted layer. We suggest that the electrostatic field caused by the macroscopically polarized 2H-GaN parts below and above a thin 3C-like layer around the stacking fault is responsible for these possibly shallow localized states.
16.	Iwata, H., et al. (author) Theoretical calculation of stacking fault energies in silicon carbide 2002 In: Silicon carbide and related materials. - Zürich-Uetikon : Trans Tech Publications Inc.. - 087849894X ; 389-3, s. 439-442 Conference paper (peer-reviewed)abstract A first-principles calculation of stacking fault energies in 3C-, 4H-, and 6H-SiC, based on the local-density approximation within the density-functional theory, is reported. All the structurally different stacking faults -which can be introduced by glide along the (0001) basal plane are considered. The number of such stacking faults in these polytypes is one, two, and three, respectively. The stacking fault energies are also calculated using the simpler generalized axial next-nearest-neighbor Ising (ANNNI) model. Our calculations confirm that the stacking fault energy of 3C-SiC is negative, and we also find that one of the three types of stacking faults in 6H-SiC has a considerably higher stacking fault energy than the other two types.
17.	Jones, Robert, et al. (author) Electrical and optical properties of multivacancy centres in diamond 2007 In: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 204:9, s. 3059-3064 Journal article (peer-reviewed)abstract Recent experiments have shown that vacancy clusters are common defects in all types of monocrystalline brown diamond. This is believed to be due to an enhanced stability of the bounding (I 11) or (I 10) surfaces, arising from the formation of pi-bonded chains. These chains lead to broad bands of gap states with acceptor and donor levels around E-v + 2 eV. They also are likely to be responsible for the broad absorption continuum extending from the NIR through the visible and into the UV region which is characteristic of brown diamonds. High temperature treatment removes or transforms the clusters in CVD and type IIa diamonds leaving the diamond colourless. In type la brown diamonds, heat treatments up to 2500 degrees C lead to the breakup of the clusters and the formation of specific vacancy-nitrogen defects. We show that ab initio modelling of the interaction of nitrogen with the chains open a gap and leads to a threshold absorption energy in the 1-2 eV range. Finally, the calculations shed light on the identity of the vacancy-nitrogen defects observed.
18.	Jones, R., et al. (author) First-principles theory of nitrogen aggregates in diamond 1992 In: Philosophical Magazine Letters. - : Informa UK Limited. - 0950-0839 .- 1362-3036. ; 66:2, s. 67-74 Journal article (peer-reviewed)abstract Local-density-functional theory is used to evaluate the structure, vibrational bands and electronic properties of two point defects in diamond a pair of adjacent substitutional N atoms and a vacancy surrounded by four N atoms. These defects are important as they are possible models of the A and B centres seen in type Ia diamond. For the A centre we find a N─N bond length of 2·14 Å, an occupied electronic energy level near midgap and four infrared absorption bands with frequencies close to the experimental values. For the model of the B centre we find a N─C length of 1·49 Å an occupied triplet electronic level within the gap consistent with the recent suggestion that the N9 absorption band is due to this defect and again vibratory modes in close agreement with experiment. These results provide strong evidence as to the validity of the models for the A and B centres.
19.	Latham, Christopher D., et al. (author) The contribution made by lattice vacancies to the Wigner effect in radiation-damaged graphite 2013 In: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 25:13 Journal article (peer-reviewed)abstract Models for radiation damage in graphite are reviewed and compared, leading to a re-examination of the contribution made by vacancies to annealing processes. A method based on density functional theory, using large supercells with orthorhombic and hexagonal symmetry, is employed to calculate properties and behaviour of lattice vacancies and displacement defects. It is concluded that annihilation of intimate Frenkel defects marks the onset of recovery in electrical resistivity, which occurs when the temperature exceeds about 160 K. Migration of isolated monovacancies is estimated to have an activation energy Ea ≈ 1.1 eV. Coalescence into divacancy defects occurs in several stages, with different barriers at each stage, depending on the path. The formation of pairs ultimately yields up to 8.9 eV energy, which is nearly 1.0 eV more than the formation energy for an isolated monovacancy. Processes resulting in vacancy coalescence and annihilation appear to be responsible for the main Wigner energy release peak in radiation-damaged graphite, occurring at about 475 K.
20.	Lindefelt, Ulf, et al. (author) Stacking faults in 3C-, 4H-, and 6H-SiC polytypes investigated by an ab initio supercell method 2003 In: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X .- 0163-1829. ; 67:15 Journal article (peer-reviewed)abstract Recent attempts to make SiC diodes have revealed a problem with stacking fault expansion in the material, leading to unstable devices. In this paper, we present detailed results from a density-functional supercell calculation on the electronic structure of stacking faults which result from glide of Shockley partials in 3C-, 4H- and 6H-SiC. It was found [Phys. Rev. B 65, 033203 (2002)] that both types of stacking faults in 4H-SiC and two types of stacking faults in 6H-SiC give rise to band states, which are strongly localized (confined within around 10 Å) in the direction orthogonal to the stacking fault plane. Based on estimates of the band offsets between different polytypes and a simple quantum-well theory, we show that it is possible to interpret this one-dimensional localization as a quantum-well confinement effect. We also find that the third type of stacking fault in 6H-SiC and the only stacking fault in 3C-SiC do not give rise to states clearly separated from the band edges, but instead give rise to rather strongly localized band states with energies very close to the band edges. We argue that these localized near band edge states are created by stacking fault induced changes in the dipole moment associated with the hexagonal symmetry. In addition, we have also calculated the stacking fault energies, using both the supercell method and the simpler ANNNI (axial next nearest-neighbor Ising) model. Both theories agree well with the low stacking fault energies found experimentally.
21.	Tiwari, Amit Kumar, et al. (author) Transition metal oxide-diamond interfaces for electron emission applications 2013 In: Silicon carbide and related materials 2012. - Durnten-Zurich : Trans Tech Publications Inc.. - 9783037856246 ; , s. 761-764 Conference paper (peer-reviewed)abstract Diamond surfaces with suitable adsorbed chemical species can exhibit both negative and positive electron affinities, arising from the complex electrostatic interplay between adsorbates and surface carbon atoms of diamond lattice. We present the results of density functional calculations into the energetics and the electron affinity of diamond (100) surfaces terminated with the oxides of selected transition metals. We find that for a correct stoichiometry, oxides of transition metals, such as Ti and Zn, exhibit a large negative electronic affinity of around 3 eV. The desorption of transition metal oxides is found to be highly endothermic. We therefore propose that transition metal oxides are promising for the surface coating of diamond-based electron emitters, as these exhibit higher thermal stability in comparison to the commonly used Cs-O termination, while retaining the advantage of inducing a large negative electron affinity
22.	Tiwari, Amit K., et al. (author) Ultra thin transition metal oxide coatings on diamond for thermionic applications 2013 In: Proceedings of the MRS Fall Meeting Symposim, MRS Fall Meeting, 24-29 November 2012, Boston, USA. - Warrendale : Materials Research Society. ; , s. 13-18 Conference paper (peer-reviewed)abstract We have investigated, using density functional simulations, the energetics and the electronic properties of oxides of selected transition metals, TMs, adsorbed onto a diamond (001) surface. We find that stoichiometric oxides of TMs, particularly Ti and Zn, influence the electron affinity of diamond strongly. The electron affinities of stoichiometric oxides of Ti and Zn are calculated to be around -3eV, significantly higher than 1.9eV of commonly used H-termination. The reactions of TMs with an oxygenated diamond are found to be highly exothermic. Based upon the energetics and the electronic properties, we propose that in the regime of ultra thin films, oxides of TMs are promising options for surface coating of diamond-based electron emitters, as these coatings are compatible with semiconductor device fabrication processes, while having the benefit of inducing a large negative electron affinity
23.	Öberg, Sven, et al. (author) Effect of functionalization and charging on resonance energy and radial breathing modes of metallic carbon nanotubes 2016 In: Physical Review B. - 2469-9950 .- 2469-9969. ; 93:4 Journal article (peer-reviewed)abstract While changes in resonant Raman scattering measurements are commonly used to measure the effect of chemical functionalization on single-walled carbon nanotubes, the precise effects of functionalization on these spectra have yet to be clearly identified. In this density functional theory study, we explore the effects of functionalization on both the nanotube resonance energy and frequency shifts in radial breathing mode. Charge transfer effects cause a shift in the first Van Hove singularity spacings, and hence resonance excitation energy, and lead to a decrease in the radial breathing mode frequency, notably when the Fermi level decreases. By varying stochastically the effective mass of carbon atoms in the tube, we simulate the mass effect of functionalization on breathing mode frequency. Finally, full density functional calculations are performed for different nanotubes with varying functional group distribution and concentration using fluorination and hydrogenation, allowing us to determine overall effect on radial breathing mode and charge transfer. The results concur well with experiment, and we discuss the importance when using Raman spectroscopy to interpret experimental functionalization treatments

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