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1.
  • Fjer, M., et al. (author)
  • Low frequency noise in strained Si heterojunction bipolar transistors
  • 2011
  • In: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 58:12, s. 4196-4203
  • Journal article (peer-reviewed)abstract
    • The low frequency noise performance of strained Si heterojunction bipolar transistors (sSi HBTs) is presented for the first time. Conventional SiGe HBTs and Si bipolar junction transistors (BJTs), processed with strained Si devices, were also measured as a reference. It is found that a lower noise level is obtained in sSi HBTs for a given collector current, which is important for circuit applications, compared with either SiGe HBTs or Si BJTs. However, sSi HBTs exhibit greater low frequency noise compared with other devices at fixed base current. This is due to the presence of defects that are caused by the integration of the strain-relaxed buffer in the fabrication of sSi HBTs. The relationship between low frequency noise and defects is supported by material characterization. © 2011 IEEE.
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2.
  • Persson, S., et al. (author)
  • Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates
  • 2008
  • In: IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST. - NEW YORK : IEEE. ; , s. 735-738
  • Conference paper (peer-reviewed)abstract
    • Strained Si HBTs have been demonstrated for the first time with a maximum current gain (P) of 3700 using a relaxed Si(0.85)Ge(0.15) virtual substrate, Si(0.7)Ge(0.3) base and strained Si emitter. This represents 10x and 27x larger gain compared with pseudomorphic SiGe HBTs and Si control BJTs which were manufactured in parallel and had current gains of 334 and 135, respectively. The strained Si HBTs exhibited satisfactory breakdown voltage (2.5 V) compared with SiGe HBTs (2.7 V) and Si BJTs (4.5 V) and excellent control of collector off-state leakage (< 20 fA).
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